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Ponchak, George E.

Publications and source records attributed to Ponchak, George E..

At least 73 records · Page 4

Experimental Verification of the Use of Metal Filled Via Hole Fences for Crosstalk Control of Microstrip Lines in LTCC Packages

Coupling between microstrip lines in dense RF packages is a common problem that degrades circuit performance. Prior three-dimensional-finite element method (3-D-FEM) electromagnetic simulations have shown that metal filled via hole fences between two adjacent microstrip lines actually Increases coupling between the lines: however, if the top of the via posts are connected by a metal strip, coupling is reduced. In this paper, experimental verification of the 3-D-FEM simulations is demonstrated for commercially fabricated low temperature cofired ceramic (LTCC) packages. In addition, measured attenuation of microstrip lines surrounded by the shielding structures is presented and shows that shielding structures do not change the attenuation characteristics of the line.

Ponchak, George E.↗

Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology

Multifinger SiGe HBTs have been fabricated using a novel fully self-aligned double-mesa technology. With the novel process technology, a common-emitter 2x2x30 sq micrometer device exhibits high maximum oscillating frequency (f(sub max)) and cut-off frequency (f(sub T)) of 78 and 37 GHz, respectively. In class-A operation, a multifinger device with l0x2x30 sq micrometer emitter is expected to provide an output power of 25.6 dBm with a gain of 10 dB and a maximum power added efficiency (PAE) of 30.33% at 8 GHz.

Lu, Liang-Hung↗

RF MEMS and Their Applications in NASA's Space Communication Systems

Radio frequency (RF) and microwave communication systems rely on frequency, amplitude, and phase control circuits to efficiently use the available spectrum. Phase control circuits are required for electronically scanning phase array antennas that enable radiation pattern shaping, scanning, and hopping. Two types of phase shifters, which are the phase control circuits, are most often used. The first is comprised of two circuits with different phase characteristics such as two transmission lines of different lengths or a high pass and low pass filter and a switch that directs the RF power through one of the two circuits. Alternatively, a variable capacitor, or varactor, is used to change the effective electrical path length of a transmission line, which changes the phase characteristics. Filter banks are required for the diplexer at the front end of wide band communication satellites. These filters greatly increase the size and mass of the RF/microwave systems, but smaller diplexers may be made with a low loss varactor or a group of capacitors, a switch and an inductor.

Williams, W. Daniel↗

Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on low resistivity Si wafers. However, the closely spaced transmission lines are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling of Finite Ground Coplanar (FGC) waveguides embedded in polyimide layers are presented for the first time. These results show that FGC lines have approximately 8 dB lower coupling than coupled Coplanar Waveguides. Furthermore, it is shown that the forward and backward coupling characteristics for FGC lines do not resemble the coupling characteristics of other transmission lines such as microstrip.

Ponchak, George E.↗

Coupling Between Microstrip Lines with Finite Width Ground Plane Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on complementary metal oxide semiconductor (CMOS) (low resistivity) Si wafers. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements are used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions.

Ponchak, George E.↗

Miniaturized Wilkinson Power Dividers Utilizing Capacitive Loading

This letter reports the miniaturization of a planar Wilkinson power divider by capacitive loading of the quarter wave transmission lines employed in conventional Wilkinson power dividers. Reduction of the transmission line segments from lambda/4 to between lambda/5 and lambda/12 are reported here. The input and output lines at the three ports and the lines comprising the divider itself are coplanar waveguide (CPW) and asymmetric coplanar stripline (ACPS), respectively. The 10 GHZ power dividers are fabricated on high resistivity silicon (HRS) and alumina wafers. These miniaturized dividers are 74% smaller than conventional Wilkinson power dividers, and have a return loss better than +30 dB and an insertion loss less than 0.55 dB. Design equations and a discussion about the effect of parasitic reactance on the isolation are presented for the first time.

Scardelletti, Maximilian C.↗

Coupling between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing SilSiGe monolithic microwavdmillimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented. A discussion of the electric and magnetic field distributions for the coupled microstrip lines is presented to provide a physical rationale for the presented results.

Ponchak, George E.↗

Characteristics of Finite Ground Coplanar Waveguide Lumped Elements

This paper presents the measured characteristics of lumped elements in coplanar waveguide with narrow width ground planes. It is shown for the first time that lumped elements may be placed in the ground planes of the Finite Ground Coplanar waveguide (FGC) to obtain enhanced electrical characteristics.

Ponchak, George E.↗

Microelectromechanical Switches for Phased Array Antennas

Preliminary results are presented on the fabrication and testing of a MicroElectro-Mechanical (MEM) microstrip series switch. This switch is being developed for use in a K-band phased array antenna that NASA will use for communication links in its Earth orbiting satellites. Preliminary insertion loss and isolation measurements are presented.

Ponchak, George E.↗

High-Q X-Band and K-Band Micromachined Spiral Inductors for Use in Si-Based ICs

A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters measurement is taken to characterize the performance of the inductors. With an etch depth of 20 micron, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe/Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

Lu, Liang-Hung↗

Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters

Switches with low insertion loss and high isolation are required for switched line phase shifters and the transmit/receive switch at the front end of communication systems. A Finite Ground Coplanar (FGC) waveguide capacitive, shunt MEMS switch has been implemented on high resistivity Si. The switch has demonstrated an insertion loss of less than 0.3 dB and a return loss greater than 15 dB from 10 to 20, GHz. The switch design, fabrication, and characteristics are presented.

Ponchak, George E.↗

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Simons, Rainee N.↗

Evanescent Microwave Probes on High-Resistivity Silicon and its Application in Characterization of Semiconductors

In this article we report the design, fabrication, and characterization of very high quality factor 10 GHz microstrip resonators on high-resistivity (high-rho) silicon substrates. Our experiments show that an external quality factor of over 13 000 can be achieved on microstripline resonators on high-rho silicon substrates. Such a high Q factor enables integration of arrays of previously reported evanescent microwave probe (EMP) on silicon cantilever beams. We also demonstrate that electron-hole pair recombination and generation lifetimes of silicon can be conveniently measured by illuminating the resonator using a pulsed light. Alternatively, the EMP was also used to nondestructively monitor excess carrier generation and recombination process in a semiconductor placed near the two-dimensional resonator.

Tabib-Azar, M.↗

Finite Ground Coplanar (FGC) Waveguide: Characteristics and Advantages Evaluated for Radiofrequency and Wireless Communication Circuits

Researchers in NASA Lewis Research Center s Electron Device Technology Branch are developing transmission lines for radiofrequency and wireless circuits that are more efficient, smaller, and make lower cost circuits possible. Traditionally, radiofrequency and wireless circuits have employed a microstrip or coplanar waveguide to interconnect the various electrical elements that comprise a circuit. Although a coplanar waveguide (CPW) is widely viewed as better than a microstrip for most applications, it too has problems. To solve these problems, NASA Lewis and the University of Michigan developed a new version of a coplanar waveguide with electrically narrow ground planes. Through extensive numerical modeling and experimental measurements, we have characterized the propagation constant of the FGC waveguide, the lumped and distributed circuit elements integrated in the FGC waveguide, and the coupling between parallel transmission lines. Although the attenuation per unit length is higher for the FGC waveguide because of higher conductor loss, the attenuation is comparable when the ground plane width is twice the center conductor width as shown in the following graph. An upper limit to the line width is derived from observations that when the total line width is greater than ld/2, spurious resonances due to the parallel plate waveguide mode are established. Thus, the ground plane width must be less than ld/4 where ld is the wavelength in the dielectric. Since the center conductor width S is typically less than l/10 to maintain good transverse electromagnetic mode characteristics, it follows that a ground plane width of B = 2S would also be electrically narrow. Thus, we can now treat the ground strips of the FGC waveguide the same way that the center conductor is treated.

Ponchak, George E.↗

0.4 Microns Spatial Resolution with 1 GHz (lambda = 30 cm) Evanescent Microwave Probe

In this article we describe evanescent field imaging of material nonuniformities with a record resolution of 0.4 microns at 1 GHz (lambda(sub g)/750000), using a resonant stripline scanning microwave probe. A chemically etched tip is used as a point-like evanescent field emitter and a probe-sample distance modulation is employed to improve the signal-to-noise ratio. Images obtained by evanescent microwave probe, by optical microscope, and by scanning tunneling microscope are presented for comparison. Probe was calibrated to perform quantitative conductivity measurements. The principal factors affecting the ultimate resolution of evanescent microwave probe are also discussed.

Tabib-Azar, M.↗

RF Transmission Lines on Silicon Substrates

A review of RF transmission lines on silicon substrates is presented. Through measurements and calculated results, it is shown that attenuation is dominated by conductor loss if silicon substrates with a resistivity greater than 2500 Ohm-cm are used. Si passivation layers affect the transmission line attenuation; however, measured results demonstrate that passivation layers do not necessarily increase attenuation. If standard, low resistivity Si wafers must be used, alternative transmission lines such as thin film microstrip and Co-Planar Waveguide (CPW) on thick polyimide layers must be used. Measured results presented here show that low loss per unit length is achievable with these transmission lines.

Ponchak, George E.↗

Low Loss, Finite Width Ground Plane, Thin Film Microstrip Lines on Si Wafers

Si RFICs on standard, 2 Omega-cm. Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called Thin Film Microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 Omega-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small.

Ponchak, George E.↗