Engineering topics

Ponchak, George E.

Publications and source records attributed to Ponchak, George E..

At least 37 records · Page 2

NASA NTRS2008

A 1 GHz Oscillator-Type Active Antenna

Wireless sensors are desired for monitoring aircraft engines, automotive engines, industrial machinery, and many other applications. The most important requirement of sensors is that they do not interfere with the environment that they are monitoring. Therefore, wireless sensors must be small, which demands a high level of integration. Sensors that modulate an oscillator active antenna have advantages of small size, high level of integration, and lower packaging cost. Several types of oscillator active antennas have been reported. Ip et al. demonstrated a CPW line fed patch antenna with a feedback loop [1]. No degradation in performance was noticed without a ground plane. A GaAs FET was used in an amplifier/oscillator-based active antenna [2]. An oscillator based on a Cree SiC transistor was designed and characterized in [3]. This paper reports the integration of the SiC Clapp oscillator to a slotline loop antenna.

Jordan, Jennifer L.↗

NASA NTRS2007

Characteristics of Coplanar Waveguide on Sapphire for High Temperature Applications (25 to 400 degrees C)

This paper presents the characteristics of coplanar waveguide transmission lines fabricated on R-plane sapphire substrates as a function of temperature across the temperature range of 25 to 400 C. Effective permittivity and attenuation are measured on a high temperature probe station. Two techniques are used to obtain the transmission line characteristics, a Thru-Reflect-Line calibration technique that yields the propagation coefficient and resonant stubs. To a first order fit of the data, the effective permittivity and the attenuation increase linearly with temperature.

Ponchak, George E.↗

NASA NTRS2007

Characteristics of Coplanar Waveguide on Sapphire for High Temperature Applications (25 to 400 C)

Ponchak, George E.↗

NASA NTRS2007

High-Temperature Characterization of Alumina Substrates and Folded Slot Antenna

The characterization of 99.6% polycrystalline alumina substrates and folded slot antennas is presented in this paper. Coplanar Waveguide (CPW) calibration standards where fabricated on 99.6% polycrystalline alumina substrates. Thru-Reflect-Line (TRL) calibrations were performed at temperatures of 25 to 400 C over a frequency range from 0.5 to 50 GHz. The effective dielectric constant of the alumina substrates was determined to be relatively constant at 5.4 from 25 to 200 C and then increased steadily to approximately 6 at 400 C. The loss of the CPW lines increased as temperature and frequency increased as well noting that the increase in loss is even more profound as both the temperature and frequency increased simultaneously. A CPW fed folded slot antenna fabricated on the alumina substrates is also presented. The Return Loss (RL) of a CPW fed folded slot antenna exhibits a self impedance matching technique. The RL of the folded slot antenna at 25 C displays a resonance at 3.5 GHz and is approximately 16 dB in magnitude. At 300 C the resonance shifts down in frequency to approximately 3.3 dB and has roughly the same magnitude. However the loss of the antenna response also increases at this elevated temperature. This work is part of the initial stages of an effort at NASA Glenn research Center to develop wireless sensors for harsh environments. This work can reduce cost, space to house all the hard wired connections, and reduce the weight of the overall units such as aerospace engines and allow for the placement of the wireless sensors in the engine which are not possible with hard wired sensors.

Scardelletti, Maximilian C.↗

NASA NTRS2007

Characteristics of a Linearly Tapered Slot Antenna (LTSA) Conformed Longitudinally Around a Cylinder

The family of tapered slot antennas (TSA s) is suitable for numerous applications. Their ease of fabrication, wide bandwidth, and high gain make them desirable for military and commercial systems. Fabrication on thin, flexible substrates allows the TSA to be conformed over a given body, such as an aircraft wing or a piece of clothing for wearable networks. Previously, a Double Exponentially Tapered Slot Antenna (DETSA) was conformed around an exponential curvature, which showed that the main beam skewed towards the direction of curvature. This paper presents a Linearly Tapered Slot Antenna (LTSA) conformed longitudinally around a cylinder. Measured and simulated radiation patterns and the direction of maximum H co-polarization (Hco) as a function of the cylinder radius are presented.

Jordan, Jennifer L.↗

NASA NTRS2007

RF and DC Power Handling Characterization of Thin Film Resistors Embedded on LCP

For the first time, the DC and RF power handling capability of NiCrAlSi thin film resistors on Liquid Crystal Polymer (LCP) is presented. It is shown that there is a maximum power that the resistors can handle without causing degradation of the resistors, and this value is significantly less than the power required for burn out of the resistors. EDAX shows that the resistors fail due to electromigration of Ni and Cr, and migration of C from the LCP.

Ponchak, George E.↗

NASA NTRS2007

Electrically Small Folded Slot Antenna Utilizing Capacitive Loaded Slot Lines

This paper presents an electrically small, coplanar waveguide fed, folded slot antenna that uses capacitive loading. Several antennas are fabricated with and without capacitive loading to demonstrate the ability of this design approach to reduce the resonant frequency of the antenna, which is analogous to reducing the antenna size. The antennas are fabricated on Cu-clad Rogers Duriod(TM) 6006 with multilayer chip capacitors to load the antennas. Simulated and measured results show close agreement, thus, validating the approach. The electrically small antennas have a measured return loss greater than 15 dB and a gain of 5.4, 5.6, and 2.7 dBi at 4.3, 3.95, and 3.65 GHz, respectively.

Scardelletti, Maximilian C.↗

NASA NTRS2007

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

This paper presents the characteristics of coplanar waveguide transmission lines on R-plane sapphire and alumina over the temperature range of 25 to 400 C and the frequency range of 45 MHz to 50 GHz. A Thru-Reflect-Line calibration technique and open circuited terminated stubs are used to extract the attenuation and effective permittivity. It is shown that the effective permittivity of the transmission lines and, therefore, the relative dielectric constant of the two substrates increase linearly with temperature. The attenuation of the coplanar waveguide varies linearly with temperature through 200 C, and increases at a greater rate above 200 C.

Ponchak, George E.↗

NASA NTRS2006

Characteristics of Double Exponentially Tapered Slot Antenna (DETSA) Conformed in the Longitudinal Direction Around a Cylindrical Structure

The characteristics of a double exponentially tapered slot antenna (DETSA) as a function of the radius that the DETSA is conformed to in the longitudinal direction is presented. It is shown through measurements and simulations that the radiation pattern of the conformed antenna rotates in the direction through which the antenna is curved, and that diffraction affects the radiation pattern if the radius of curvature is too small or the frequency too high. The gain of the antenna degrades by only 1 dB if the radius of curvature is large and more than 2 dB for smaller radii. The main effect due to curving the antenna is an increased cross-polarization in the E-plane.

Ponchak, George E.↗

NASA NTRS2005

High Temperature Performance of a SiC MESFET Based Oscillator

A hybrid, UHF-Band differential oscillator based on 10 w SiC RF Power Metal Semiconductor Field Effect Transistor (MESFET) has been designed, fabricated and characterized through 475 C. Circuit is fabricated on an alumina substrate with thin film spiral inductors, chip capacitors, chip resistors, and wire bonds for all crossovers and interconnectors. The oscillator delivers 15.7 dBm at 515 MHz into a 50 Ohm load at 125 C with a DC to RF conversion efficiency of 2,8%. After tuning the load impedance, the oscillator delivers 18.8 dBm at 610 MHz at 200 C with a DC to RF conversion efficiency of 5.8%. Finally, by tuning the load and bias conditions, the oscillator delivers 4.9 dBm at 453 MHz at 475 C.

Schwartz, Zachary D.↗

NASA NTRS2005

RF MEMS Phase Shifters and their Application in Phase Array Antennas

Electronically scanned arrays are required for space based radars that are capable of tracking multiple robots, rovers, or other assets simultaneously and for beam-hopping communication systems between the various assets. ^Traditionally, these phased array antennas used GaAs Monolithic Microwave Integrated Circuit (MMIC) phase shifters, power amplifiers, and low noise amplifiers to amplify and steer the beam, but the development of RF MEMS switches over the past ten years has enabled system designers to consider replacing the GaAs MMIC phase shifters with RF Micro-Electro Mechanical System (MEMS) phase shifters. In this paper, the implication of replacing the relatively high loss GaAs MMICs with low loss MEMS phase shifters is investigated.

Scardelletti, Maximilian↗

NASA NTRS2005

1 GHz, 200 C, SiC MESFET Clapp Oscillator

A SiC Clapp oscillator frabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 gigahertz. The oscillator operated from 30 to 200 C with an output power of 21.8 dBm at 1 gigahertz and 200 C. The efficiency at 200 C is 15 percent. The frequency variation over the temperature range is less than 0.5 percent.

Ponchak, George E.↗

NASA NTRS2005

Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

Scardelletti, Maximilian C.↗

NASA NTRS2005

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗

NASA NTRS2004

High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates

SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.

Alterovitz, Samuel A.↗

NASA NTRS2004

Measurement of Thin Film Integrated Passive Devices on SiC through 500 C

Wireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C.

Schwartz, Zachary D.↗

NASA NTRS2004

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Ponchak, George E.↗

NASA NTRS2004

Excitation of Coupled Slotline Mode in Finite Ground CPW with Unequal Ground Plane Widths

The coupling between the desired CPW mode and the unwanted coupled slotline mode is presented for finite ground coplanar waveguides with unequal ground plane widths. Measurements, quasi-static conformal mapping, and Finite-Difference Time-Domain analysis are performed to determine the dependence of the slotline mode excitation on the physical dimensions of the FGC line and on the frequency range of operation. It is shown that the ratio of the slotline mode to the CPW mode can be as high as 18 dB. The use of airbridges is shown to reduce the slotline mode by 15 dB, but that the slotline mode fully reestablishes itself after 2000 microns. Furthermore, these results are independent of frequency.

Ponchak, George E.↗