Phatak, Charudatta | Engineering Papers

DOE OSTI2026

Magnonic spontaneous oscillation induced by parametric pumping

Spontaneous dynamic systems have attracted significant attention for their rich underlying physics such as phase-locking and synchronization. In this work, we report a new mechanism of generating magnetic spontaneous oscillation via parametric pumping. By applying a pump tone to excite propagating spin waves in a yttrium iron garnet delay line, four-wave mixing converts the pump mode into two phase-autonomous propagating magnon modes, i.e. a spontaneous mode with nearly twice the wavenumber of the pump mode and an idler mode with nearly zero wavenumber. This allows us to reliably generate ultrasharp spin wave dynamics with broad frequency tunability from the pump and magnetic field. We show that the spontaneous mode can be phase-locked to a probe tone, similar to an auto-oscillator. Furthermore, the spontaneous dynamics can be used to implement a high-gain magnonic parametric amplifier with a gain up to 40 dB. Our results open a new avenue for studying nonlinear magnonics and synchronization physics in propagating magnon geometry and for developing new magnonic devices.

Li, Yi↗

DOE OSTI2024

Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/Hf 0.5 Zr 0.5 O 2−δ (HZO)/W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten suboxide interfacial layer formed at the bottom interface during fabrication, which introduces a potential dip and leads to asymmetric switching fields. Additionally, we compare the measured potentials to DFT calculations and find it is nearly 3 V lower than expected in the HZO, which appears to be caused by oxygen vacancies and a resulting negative built-in potential. In conclusion, these chemical and electrostatic details are important to characterize and tune to achieve high-performance ferroelectric devices.

Defects in solids↗