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Pellish, Jonathan A.

Publications and source records attributed to Pellish, Jonathan A..

60 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

High-Speed Single-Event Current Transient Measurements in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: 1) Position correlation. 2) Unique response for different bias schemes. 3) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: 1) Feedback using microbeam data 2) Overcome existing issues of LET and ion range with microbeam Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗
NASA NTRS2009

Low-Energy Proton Testing Methodology

Use of low-energy protons and high-energy light ions is becoming necessary to investigate current-generation SEU thresholds. Systematic errors can dominate measurements made with low-energy protons. Range and energy straggling contribute to systematic error. Low-energy proton testing is not a step-and-repeat process. Low-energy protons and high-energy light ions can be used to measure SEU cross section of single sensitive features; important for simulation.

Pellish, Jonathan A.↗
NASA NTRS2009

Heavy Ion Current Transients in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗
NASA NTRS2009

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

Pellish, Jonathan A.↗
NASA NTRS2008

Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMs

Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.

Tipton, Alan D.↗