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Passmore, Brandon

Publications and source records attributed to Passmore, Brandon.

Low profile, highly configurable, current sharing paralleled wide band gap power device power module

A method of making a power module includes providing a base plate defining a topology pattern, providing a power substrate above the base plate, providing at least two power contacts and arranging solder catches in the at least two power contacts, soldering the at least two power contacts to the power substrate utilizing the solder catches, and securing a housing to the power substrate.

42 ENGINEERING↗

High voltage power chip module

A power die module using a compression connection to a power die in a small package with corona extenders positioned around short efficient path exterior electrical connections. The module is built from a baseplate with connected sidewalls forming an interior compartment holding a power substrate with attached threaded inserts. A printed circuit board bolted to the power substrate with high voltage power die compressively held between the board and the substrate. The compressive hold enhances the electrical connections between the contacts on the top and bottom of the power die and either the power substrate or the printed circuit board. Exterior blade connectors extend upward from the printed circuit board through blade apertures in a lid that covers the interior compartment. The lid includes corona extenders positioned around the blade apertures to allow for high voltage applications while maintaining a small size lightweight package. The sidewall has a perimeter that also includes one or more corona extenders.

42 ENGINEERING↗

88 kilowatt automotive inverter with new 900 Volt silicon carbide MOSFET technology

This final report is on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands of hybrid, plug-in hybrid, and extended-range electrified vehicle architectures. Significant performance improvement, via conduction, switching, and reverse-recovery loss metrics, from this SiC MOSFET-based inverter—especially at light load conditions—will be discussed.

30 DIRECT ENERGY CONVERSION↗

A Disruptive Approach to Electric Vehicle Power Electronics Final Report

This project developed and demonstrated a new power electronics technology for electric vehicle drivetrains, that achieved significant improvements in power density and efficiency over standard drive cycles, relative to the commercial state of the art. In particular, the prototype measured loss and efficiency curves demonstrated a reduction in total loss over the US EPA US06 drive cycle by a factor of four. Similar reductions are observed for urban (UDDS) and highway (HWFET) drive cycles. Further, the project demonstrated a significant reduction in the total film capacitor requirements, by over an order of magnitude; this was achieved through fundamental improvements in converter circuit topologies. These nonincremental technology advances can lead to significant improvements in temperature rise, reliability, cost, and cooling system size and weight. These results were achieved through a new proposed composite converter architecture, and were demonstrated in a boost-type system similar to that employed by Toyota, Ford, and Honda. A 30 kW silicon prototype achieved a US06 average efficiency of 97.5%, which represents a reduction in average loss by a factor of approximately four relative to the 92.5% average efficiency of the commercial state of the art. A silicon carbide prototype achieved similar efficiency, while also achieving power densities of 23 kW/L (volumetric) and 20 kW/kg (gravimetric) in a boost dc-dc system including magnetics and film capacitors. This was achieved with a SiC switching frequency of 240 kHz, which allowed employment of planar magnetics. These power densities are roughly four times better than the commercial state of the art, and significantly exceed the DOE APEEM 2020 goals. In addition to the composite boost system, a SiC inverter was demonstrated at the 800 V 30 kW level. This inverter was demonstrated driving a permanent magnet machine over the US 06 drive cycle. The replacement of 1200 V Si IGBTs with 1200 V SiC MOSFETs led to improvement of CAFE average efficiency from 98.7% to 99.5%, which corresponds to a reduction of average loss by a factor of approximately two. The modular nature of the composite converter architecture opens the possibility of reuse of one or more converter modules during charging operations, providing a path for onboard charging capability at significant power levels while significantly reducing the volume and weight of the added charger module. This project demonstrated an integrated Level II charger whose add-on specific weight was approximately four times better than the DOE PHEV charger 2022 targets.

33 ADVANCED PROPULSION SYSTEMS↗

Low profile, highly configurable, current sharing paralleled wide band gap power device power module

A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Method for reworkable packaging of high speed, low electrical parasitic power electronics modules through gate drive integration

A multichip power module directly connecting the busboard to a printed-circuit board that is attached to the power substrate enabling extremely low loop inductance for extreme environments such as high temperature operation. Wire bond interconnections are taught from the power die directly to the busboard further enabling enable low parasitic interconnections. Integration of on-board high frequency bus capacitors provide extremely low loop inductance. An extreme environment gate driver board allows close physical proximity of gate driver and power stage to reduce overall volume and reduce impedance in the control circuit. Parallel spring-loaded pin gate driver PCB connections allows a reliable and reworkable power module to gate driver interconnections.

42 ENGINEERING↗

The impact of quantum dot filling on dual-band optical transitions via intermediate quantum states

InAs/GaAs quantum dot infrared photodetectors with different doping levels were investigated to understand the effect of quantum dot filling on both intraband and interband optical transitions. The electron filling of self-assembled InAs quantum dots was varied by direct doping of quantum dots with different concentrations. Photoresponse in the near infrared and middle wavelength infrared spectral region was observed from samples with low quantum dot filling. Although undoped quantum dots were favored for interband transitions with the absence of a second optical excitation in the near infrared region, doped quantum dots were preferred to improve intraband transitions in the middle wavelength infrared region. As a result, partial filling of quantum dot was required, to the extent of maintaining a low dark current, to enhance the dual-band photoresponse through the confined electron states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗