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Passenheim, B. C.

Publications and source records attributed to Passenheim, B. C..

13 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Charging and discharging Teflon

The charging and discharging characteristics of several common satellite materials exposed to 0-30KV electrons are measured. Teflon is discussed because the charging characteristics are radically altered immediately after a spontaneous discharge. The exterior geometry of the test structure is shown. In all cases dielectric samples were 82 cm in diameter mounted on the front of a 120 cm diameter cylinder supported on an 85 cm, 0.95 cm thick plexiglass disc. Dielectric materials investigated were: back surface aluminized Kapton, back surface silvered Teflon, silicon alkyd white thermal control paint, and 50 cm by 50 cm array of 0.030 cm thick MgF2 coated fused silica solar cell cover slips.

Passenheim, B. C.↗
NASA NTRS1971

Experimental and computer studies of the radiation effects in silicon solar cells

A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.

Leadon, R. E.↗
NASA NTRS1971

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗