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Park, J. S.

Publications and source records attributed to Park, J. S..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

beam epitaxy↗
NASA NTRS1994

High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

By increasing the quantum well barrier width, incorporating spacer layers between the contacts and the multi quantum well region, and optimizing the materials growth parameters, we have dramatically reduced the dark current by many orders of magnitude and thereby significantly increased the detectivity.

spacer↗
NASA NTRS1993

16 Micrometer Infrared Hot Electron Transistor

We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K.

Gunapala, S. D.↗
NASA NTRS1993

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

Lin, T. L.↗
NASA NTRS1993

Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector

A photoresponse model has been developed for the Si_(1-x)Ge_x/Si heterojunction internalphotoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than theFermi energy. A Si_(0.7)Ge_(0.3)/Si HIP detector with a cutoff wavelength of 23 micrometers andan emission coefficient of 0.4 eV^(-1) has been demonstrated. The model agrees with the measureddetector response at lambda greater than 8 micrometers. The potential barrier determined by themodel is in close agreement (difference similar to 4 meV) with the potential barrier determined by theRichardson plot, compared to the discrepancies of 20-50 meV usually observed for PtSi Schottkydetectors.

Lin, T.↗
NASA NTRS1993

Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors. The extended cutoffwavelengths resulted from the reduced effective potential barriers due to the combined effects of anincreased electric field near the silicide/Si interface and the Schottky image force. The p+ dopingspikes were grown by molecular beam epitaxy at 450 degrees C using elemental boron as the dopantsource, with doping concentrations ranging from 5 x 10^(19) to 2 x 10^(20) cm^(-3). The cutoffwavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIRregime was demonstrated. Furthermore, the effective potential barriers determined by the Richardsonplots were used to study the electrically activated boron dopant concentrations of the thin (1-nm-thick) spikes.

del Castillo, H. M.↗
NASA NTRS1993

Very Long Wavelength Intersubband Infrared Hot Electron Transistor

We have demonstrated the first very long wavelength (16 micrometers) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/A1_xGa_(1- x)As (X=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick A1_xGa_(1-x)As (X=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.

quantum↗
NASA NTRS1992

Heat transfer performance comparisons of five different rectangular channels with parallel angled ribs

This paper systematically presents the results of heat transfer and friction factor data measured in five short rectangular channels with turbulence promoters. The project investigated the combined effects of the channel aspect ratio, rib angle-of-attack, and flow Reynolds number on heat transfer and pressure drop in rectangular channels with two opposite ribbed walls. The channel aspect ratio (width-to-height, W/H, ribs on side W) varied from 1/4 to 1/2, to 1, 2, and 4, while the corresponding rib angles-of-attack alpha were 90 deg, 60 deg, 45 deg, and 30 deg, respectively. The Reynolds number range was 10,000-60,000. The results suggest that the narrow aspect ratio channels (W/H less than 1) give much better heat transfer performance than the wide aspect ratio channels (W/H greater than 1). For the square channel (W/H = 1), the 60 deg/45 deg angled ribs provide the best heat transfer performance. For the narrow aspect ratio channel (W/H = 1/4 or 1/2), the 45 deg/60 deg angled ribs are recommended, while the 30 deg/45 deg angled ribs are better for wide aspect ratio channels (W/H = 4 or 2).

Park, J. S.↗
NASA NTRS1990

Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement

The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

Karunasiri, R. P. G.↗
NASA NTRS1989

Augmented heat transfer in rectangular channels of narrow aspect ratios with rib turbulators

The effects of the rib angle-of-attack on the distributions of the local heat transfer coefficient and on the friction factors in short rectangular channels of narrow aspect ratios with a pair of opposite rib-roughened walls are determined for Reynolds numbers from 10,000 to 60,000. The channel width-to-height ratios are 2/4 and 1/4; the corresponding rib angles-of-attack are 90, 60, 45, and 30 deg, respectively. The results indicate that the narrow-aspect-ratio channels give better heat transfer performance than the wide-aspect-ratio channels for a constant pumping power. Semiempirical friction and heat transfer correlations are obtained. The results can be used in the design of turbine cooling channels of narrow aspect ratios.

Han, J. C.↗
NASA NTRS1986

Measurement of heat transfer and pressure drop in rectangular channels with turbulence promoters

Periodic rib turbulators were used in advanced turbine cooling designs to enhance the internal heat transfer. The objective of the present project was to investigate the combined effects of the rib angle of attack and the channel aspect ratio on the local heat transfer and pressure drop in rectangular channels with two opposite ribbed walls for Reynolds number varied from 10,000 to 60,000. The channel aspect ratio (W/H) was varied from 1 to 2 to 4. The rib angle of attack (alpha) was varied from 90 to 60 to 45 to 30 degree. The highly detailed heat transfer coefficient distribution on both the smooth side and the ribbed side walls from the channel sharp entrance to the downstream region were measured. The results showed that, in the square channel, the heat transfer for the slant ribs (alpha = 30 -45 deg) was about 30% higher that of the transverse ribs (alpha = 90 deg) for a constant pumping power. However, in the rectangular channels (W/H = 2 and 4, ribs on W side), the heat transfer at alpha = 30 -45 deg was only about 5% higher than 90 deg. The average heat transfer and friction correlations were developed to account for rib spacing, rib angle, and channel aspect ratio over the range of roughness Reynolds number.

Han, J. C.↗
NASA NTRS1986

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗
NASA NTRS1986

Local heat transfer augmentation in channels with two opposite ribbed surfaces

The local heat transfer coefficient distribution of a square channel with two opposite ribbed walls was determined. The square channel was connected to a sudden contraction entrance in order to simulate the inlet condition of the turbine blade cooling passages. The test channel was heated by thin stainless steel foils with a thickness of 0.000025 m, and instrumented with 180 thermocouples. The brass ribs of a square cross-section were glued periodically, in line, onto the top and bottom walls of the foil-heated channel in patterns to achieve the desired spacing and angle-of-attack. The local heat transfer coefficients on the smooth side and the ribbed side walls, at the channel entrance and the downstream regions, were measured for eight rib configurations and three Reynolds numbers (Re = 10,000, 30,000, and 60,000).

Han, J. C.↗