Engineering topics

Pappas, David P.

Publications and source records attributed to Pappas, David P..

3 records

DOE OSTI2024

Alternating-bias assisted annealing of amorphous oxide tunnel junctions

Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence and reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Systematic improvements in transmon qubit coherence enabled by niobium surface encapsulation

Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T 1 relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T 1 relaxation times 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Implementing two-qubit gates at the quantum speed limit

The speed of elementary quantum gates, particularly two-qubit gates, ultimately sets the limit on the speed at which quantum circuits can operate. In this work, we experimentally demonstrate commonly used two-qubit gates at nearly the fastest possible speed allowed by the physical interaction strength between two superconducting transmon qubits. We achieve this quantum speed limit by implementing experimental gates designed using a machine-learning-inspired optimal control method. Importantly, our method only requires the single-qubit drive strength to be moderately larger than the interaction strength to achieve an arbitrary two-qubit gate close to its analytical speed limit with high fidelity. Thus the method is applicable to a variety of platforms, including those with comparable single-qubit and two-qubit gate speeds, or those with always-on interactions. We expect our method to offer significant speedups for non-native two-qubit gates that are typically achieved with a long sequence of single-qubit and native two-qubit gates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗