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Pach, Gregory F.

Publications and source records attributed to Pach, Gregory F..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Study on the Carbon Nanostructures for Nanosized Si Electrodes

Silicon (Si) has been considered as a next-generation anode material due to natural abundance, low operating potential (<0.5 V vs. Li/Li+), and high theoretical specific capacity of 4200 mAh g-1.[1] However, the electrochemical alloying reaction of Si involves large volume changes of 400% during lithiation and delithiation, causing cracking and pulverization of Si.[1] In addition, solid electrolyte interface (SEI) of Si anode experiences constant changes due to unstable SEI reactivity.[2] Considerable efforts have been made to design nanostructured Si materials to address the issues because nanostructuring can relieve the mechanical strain.[3] However, when compared to micrometer-sized active materials having sufficient electrolyte pathway through interparticle space, the nanoparticle (NP)-based electrodes tend to be densely packed. As mass loading is higher and electrode is thicker, ion transport issue can become more severe in the densely packed electrodes.[4] In this work, we will present studies on engineered porosity impacts performance in Si NP electrodes by altering carbon nanostructures. We explore the extreme limit of effectively non-porous electrodes using quasi-spherical, Si NPs, which result in densely packed electrodes when slurry is prepared with conventional carbon black. We engineer porosity using carbon nanostructures including multi-walled carbon nanotubes and carbon nanorods in place of conventional carbon black to create pore structure in Si NP-based electrodes. These experiments provide a correlation between mass loading, porosity and silicon utilization in Si NP-based electrodes. References: [1] C. K. Chan, H. Peng, G. Liu, K. Mcllwrath, X. F. Zhang, R. A. Huggins, Y. Cui, "High-performance lithium battery anodes using silicon nanowires", Nat. Nanotechnol., 2008, 3, 31, [2] J. D. McBrayer, M.-T. F. Rodrigues, M. C. Schulze, D. P. Abraham, C. A. Apblett, I. Bloom, G. M. Carroll, A. M. Coclasure, C. Fang, K. L. Harrison, G. Liu, S. D. Minteer, N. R. Neale, G. M. Veith, C. S. Johnson, J. T. Vaughey, A. K. Burrel, B. Cunningham, "Calendar aging of silicon-containing batteries", Nat. Energy, 2021, 6, 1164, [3] H. Wu, G. Zheng, N. Liu, T. J. Carney, Y. Yang, Y. Cui, "Engineering Empty space between Si Nanoparticles for Lithium-Ion Battery Anodes", Nano Lett., 2012, 12, 904, [4] X. Zhang, Z. Ju, Y. Zhu, K. J. Takeuchi, E. S. Takeuchi, A. C. Marschilok, G. Yu, "Multiscale Understanding and Architecture Design of High Energy/Power Lithium-Ion Battery Electrodes", Adv. Energy Mater., 2021, 11, 2000808

carbon nanostructure↗
DOE OSTI2021

Ternary SiGeSn alloy nanocrystals via nonthermal plasma synthesis

We report on the synthesis of ternary SiGeSn nanocrystals (NCs) produced via nonthermal plasma synthesis from silane (SiH 4 ), germane (GeH 4 ), and tetramethylstannane (Sn(CH 3 ) 4 ) precursor sources. Detailed structural, chemical, and vibrational analyses show that all three elements are incorporated both on the NC surface and within the NC core. Incorporation of Sn into the NC core is realized using a secondary injection of SiH 4 and GeH 4 precursor gases in the after-glow region of the plasma, which kinetically traps Sn in the core. We demonstrate compositional tunability of the SiGeSn NCs in which the Si and Ge ratios can be varied broadly at low Sn concentrations. We also show tunability of the Sn content up to ~2 atomic percent as revealed by ICP-MS analysis. More generally, this report demonstrates how nonthermal plasma synthesis can be used to produce metastable ternary nanostructured alloys involving thermodynamically insoluble constituents.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Insights into the Dynamic Interfacial and Bulk Composition of Copper-Modified, Hydrogen-Alloyed, Palladium Nanocubes under Electrocatalytic Conditions

Understanding and controlling the alloying properties of nanomaterials under electrochemical conditions are critically important for fields ranging from energy storage and catalysis to electrochromic window technology. Hydrogen-absorbing nanomaterials, like palladium, are especially interesting due to their ability to reversibly absorb and store hydrogen in their lattice at near-stoichiometric amounts. Palladium’s work function is also significantly deeper than that of most transition metals, which enables electrochemical underpotential deposition of conformal monolayer and submonolayer amounts of transition metals onto the palladium surface. The simultaneous existence of these two properties is unique and opens new and exciting avenues for electrochemical applications. However, the intersection of surface-modified, hydrogen-alloyed palladium nanomaterials is poorly understood, and specifically, how these structures evolve during electrochemical operating conditions remains an open question. Here, we synthesize {100}-terminated palladium nanocubes and deposit between 0.5 and 22 monolayers of copper at the palladium surface. We then electrochemically alloy these surface-modified structures with hydrogen. Using a combination of analytical electrochemistry, spectroscopy, and microscopy, we track the positional evolution of the Cu at the surface of Pd, its impact on palladium’s ability to absorb hydrogen, and copper’s effect on hydrogen evolution electrocatalysis. We show that Cu readily alloys into the palladium nanocube at potentials more negative than the Cu 2+/0 deposition, but a 0.5 monolayer thick copper layer remains at the Pd surface regardless of potential. Finally, we discuss the implications of these findings within the framework of CO 2 reduction catalysis for carbon–carbon bond-forming chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Suppressing Auger Recombination in Multiply Excited Colloidal Silicon Nanocrystals with Ligand-Induced Hole Traps

Nonradiative Auger recombination in multiply excited nanocrystals is a dominant efficiency loss pathway for nanocrystal-containing optoelectronic devices that rely on high-rate emission and absorption operating conditions. Overcoming Auger recombination in these quantum-confined systems is therefore a longstanding challenge to the synthetic nanocrystal as well as device manufacturing communities. Several successful strategies have been realized to reduce Auger recombination, but they rely on complex and time-consuming nanocrystal core/shell synthesis. Alternatively, controlling Auger rates by varying the nanocrystal–ligand-binding chemistry is a promising route to obtain functional tunability, which reduces the barrier to large-scale manufacturing. The covalent surface chemistry and the extremely long-lived photoexcited lifetimes of silicon nanocrystals (Si NCs) make them a unique system among colloidal semiconductor NCs to study the intersection between surface chemistry and photoexcited carrier dynamics. Here, we show that changing the functional group that binds a saturated dodecyl ligand to the surface of nonthermal plasma-synthesized Si NCs from alkyl to thiolate slows Auger recombination rates within multiply excited Si NCs. This reduction in Auger rate persists across Si NC sizes ranging from 3.5 to 8 nm in diameter, but the expected linear dependence of Auger rates on the NC volume is retained for both alkyl and alkylthiolate surface terminations. To understand the origin behind this elongation, we carry out steady-state and time-resolved photoluminescence measurements as well as time-resolved terahertz spectroscopy measurements. These measurements reveal that thiolate groups introduce mid-gap surface states, which, we argue, reduces the photoexcited electron–hole overlap and elongates Auger recombination times. These results highlight how a typically detrimental chemical species—mid-band gap NC surface states—can be beneficial under high-rate absorption/emission conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

SiO 2 Is Wasted Space in Single-Nanometer-Scale Silicon Nanoparticle-Based Composite Anodes for Li-Ion Electrochemical Energy Storage

The electrode processing conditions of silicon-based composite anodes play a pivotal role in the resulting interfacial chemical speciation and, thus, the electrochemical cycling behavior of the electrode. Systematically investigating how small chemical changes to the surface of the silicon nanoparticle (NP) affect larger, electrode-level properties is a strategy that will inform design principles to maximize electrode energy density and extend electrode lifetime. Here, we incorporate silicon nanoparticles (NPs) with an average diameter of 5.5 nm synthesized from the gas phase through a nonthermal plasma method into composite anode half-cell coin cells. We perform chemistry to functionalize the native hydride-terminated silicon NP surface with N-methylpyrrolidone (NMP) to improve slurry properties and reduce the silicon reactivity prior to composite electrode fabrication. We construct composite electrodes from these silicon NPs and observe an 86% capacity retention over 100 cycles at a rate of C/5, with an initial silicon specific capacity of 2600 mAh/g. We expose the same Si NPs to water that completely oxidizes these small-diameter NPs to SiO 2 and find that the SiO 2 NPs in the same electrode configuration exhibit no obvious lithium alloying capacity in the electrochemical potential range of lithium silicide alloy formation. As this result stands in contrast to existing literature, we provide a discussion on the origin of the discrepancies.

25 ENERGY STORAGE↗
DOE OSTI2020

CsI-Antisolvent Adduct Formation in All-Inorganic Metal Halide Perovskites

The excellent optoelectronic properties shown by hybrid organic/inorganic metal halide perovskites are all predicated on precisely controlling the exact nucleation and crystallization dynamics that occur during film formation. In general, high-performance thin films are obtained by a method commonly called solvent engineering (or antisolvent quench) processing. The solvent engineering method removes excess solvent, but importantly leaves behind solvent that forms chemical adducts with the lead-halide precursor salts. These adduct-based precursor phases control nucleation and the growth of the polycrystalline domains. There has not yet been a comprehensive study comparing the various antisolvents used in different perovskite compositions containing cesium. In addition, there have been no reports of solvent engineering for high efficiency in all-inorganic perovskites such as CsPbI 3 . In this work, inorganic perovskite composition CsPbI 3 is specifically targeted and unique adducts formed between CsI and precursor solvents and antisolvents are found that have not been observed for other A-site cation salts. These CsI adducts control nucleation more so than the PbI 2 -dimethyl sulfoxide (DMSO) adduct and demonstrate how the A-site plays a significant role in crystallization. The use of methyl acetate (MeOAc) in this solvent engineering approach dictates crystallization through the formation of a CsI-MeOAc adduct and results in solar cells with a power conversion efficiency of 14.4%.

14 SOLAR ENERGY↗
DOE OSTI2019

Tailoring the Surface of Silicon Nanoparticles for Enhanced Chemical and Electrochemical Stability for Li-Ion Batteries

Organic monolayers of epoxy-containing oligo(ethylene oxide)s were grafted to the surface of silicon nanoparticles via a hydrosilylation reaction. The surface functional groups suppressed the chemical and electrochemical reactivity of the as-grown and lithiated silicon nanoparticles with high material utilization. A robust Si/electrolyte interphase was formed with the participation of the grafted organic groups with facilitated Li+ transfer and was further enforced by electrode integrity via the epoxy/poly(acrylic acid) (PAA) binder reaction. The improved cycling stability and post-test analysis indicate that surface functionalization on the Si particle level is a feasible approach to enabling a Si anode in high-energy-density lithium-ion batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Probing the Surface Structure of Semiconductor Nanoparticles by DNP SENS with Dielectric Support Materials

Surface characterization is crucial for understanding how the atomic-level structure affects the chemical and photophysical properties of semiconducting nanoparticles (NPs). Solid-state nuclear magnetic resonance spectroscopy (NMR) is potentially a powerful technique for the characterization of the surface of NPs, but it is hindered by poor sensitivity. Dynamic nuclear polarization surface enhanced NMR spectroscopy (DNP SENS) has previously been demonstrated to enhance the sensitivity of surface-selective solid-state NMR experiments by 1–2 orders of magnitude. Established sample preparations for DNP SENS experiments on NPs require the dilution of the NPs on mesoporous silica. Using hexagonal boron nitride ($h$-BN) to disperse the NPs doubles DNP enhancements and absolute sensitivity in comparison to standard protocols with mesoporous silica. Alternatively, precipitating the NPs as powders, mixing them with $h$-BN, and then impregnating the powdered mixture with radical solution leads to further 4-fold sensitivity enhancements by increasing the concentration of NPs in the final sample. This modified procedure provides a factor of 9 improvement in NMR sensitivity in comparison to previously established DNP SENS procedures, enabling challenging homonuclear and heteronuclear 2D NMR experiments on CdS, Si, and Cd 3 P 2 NPs. These experiments allow NMR signals from the surface, subsurface, and core sites to be observed and assigned. For example, we demonstrate the acquisition of DNP-enhanced 2D 113 Cd– 113 Cd correlation NMR experiments on CdS NPs and natural isotropic abundance 2D 13 C– 29 Si HETCOR of functionalized Si NPs. These experiments provide a critical understanding of NP surface structures.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Measurement of band offsets and shunt resistance in CdTe solar cells through temperature and intensity dependence of open circuit voltage and photoluminescence

Band offsets at the back contact and front window layer in CdTe-based solar cells affect photovoltaic performance and challenge standard characterization methods. By analyzing the temperature and excitation dependence of both open circuit voltage and absolute photoluminescence intensity, we show that the effects band offsets can be separated from the effects of recombination and shunting. Solar cells were grown with MgZnO window layers and compared to cells with CdS window layers containing varying amounts of oxygen. It was demonstrated that band alignment rather than reduced recombination velocity is the reason for the success of MgZnO as a front interface contact. An assortment of thin back contact interlayers were also deposited, and a PbTe interlayer showed some promise as an Ohmic contact to the CdTe, though it appears to induce a photoconductive shunt. Finally, we show that the shunting resistance given by a standard current-voltage curve technique generally does not represent a physically meaningful quantity unless it is well below one kiloOhm square cm.

14 SOLAR ENERGY↗
DOE OSTI2019

Nonthermal Plasma-Synthesized Phosphorus–Boron co-Doped Si Nanocrystals: A New Approach to Nontoxic NIR-Emitters

We report on the successful creation of nonthermal plasma-synthesized phorphorus and boron co-doped Si nanocrystals (PB:Si NCs) with diameters ( D NC ) ranging from 2.9 to 7.3 nm. Peak photoluminescence (PL) emission energies for all PB:Si NC diameters are ca. 400-500 meV lower than the excitonic emission values in intrinsic Si NCs, which can be attributed to prevalent donor-acceptor (D-A) transitions within the co-doped system. This D-A transition model is further evidenced by PL lifetimes within the range of 40-80 us, faster than what is observed for intrinsic Si NCs. By reducing the level of confinement within PB:Si NCs (i.e., D NC > 4 nm), we are able to red-shift the near-infrared (NIR)-emitting D-A transitions to below the band gap of bulk Si (1.12 eV). We quantify the PL quantum yield (PLQY) for a range of DNC and show that the plasma method can achieve reasonably high PLQY values (12% for D NC = 2.9 nm), even without any optimization of the synthesis or surface chemistry. We posit that perfect charge compensation cannot explain these results and propose a model in which dominant n-type doping accounts for the observations. Furthermore, these results demonstrate that nonthermal plasma synthesis is a viable pathway for preparing PB:Si NCs featuring NIR sub-band gap D-A transitions with relatively high quantum yields. More generally, this study provides insight into how doping affects energy and charge transfer within quantum-confined systems.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Size-Dependent Asymmetric Auger Interactions in Plasma-Produced n- and p-Type-Doped Silicon Nanocrystals

Nonradiative Auger recombination (AR) tends to dominate carrier dynamics in charged, quantum-confined structures. Consequently, it complicates the practical realization of many semiconductor nanocrystal (NC)-based devices such as light-emitting diodes, photovoltaic cells, and single-photon emitters, in which charged exciton states often occur. To this end, extensive experimental studies on direct band gap NCs have investigated the trion components (both positive and negative) that construct the total AR rate. However, such an analysis has remained elusive for indirect band gap Si NCs. In this study, we investigate AR decay of non-thermal plasma-produced n- and p-type-doped Si NCs. We expand the study over a large NC size range (D NC ~ 3-8 nm), in which n- and p-type doping is achieved by either a substitutional or surface doping effect, respectively. First, we monitor the AR of charge-neutral multiexcitons by measuring the biexciton lifetime (t X X) as a function of the NC size and doping configuration. We show that this method can be used to determine the presence of free carriers for any doped NC system, regardless of the presence/absence of defect channels in the carrier dynamics. Second, we develop a photophysical fitting model to determine the Auger lifetime of the simplest charged states in Si NCs: the negative (t X - ) and positive (t X + ) trions. Trion lifetimes shorten with increasing quantum confinement, as expected from (1) closer spatial proximity of the interacting charges and (2) increased relaxation of the momentum conservation rule. While both t X - and t X + are in the nanosecond time regime (and both therefore completely dominate the carrier dynamics), AR with excess holes is faster. This asymmetry is explained by a higher density of valence band states in comparison to the conduction band states, due to effective mass differences between electrons and holes.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhanced Multiple Exciton Generation in PbS|CdS Janus-like Heterostructured Nanocrystals

Generating multiple excitons by a single high-energy photon is a promising third generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like hetero-nanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the hetero-nanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and by ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe–ZnO Tunnel Junction

Here, we developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ~1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (E g = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. But, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. Furthermore, we examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm 2 in prototype devices.

14 SOLAR ENERGY↗