Engineering topics

Olsen, L. C.

Publications and source records attributed to Olsen, L. C..

8 records

NASA NTRS1991

GaAs solar cell photoresponse modeling using PC-1D V2.1

Photoresponse data of high efficiency GaAs solar cells were analyzed using PC-1D V2.1. The approach required to use PC-1D for photoresponse data analysis, and the physical insights gained from performing the analysis are discussed. In particular, the effect of Al(x)Ga(1-x)As heteroface quality was modeled. Photoresponse or spectral quantum efficiency is an important tool in characterizing material quality and predicting cell performance. The strength of the photoresponse measurement lies in the ability to precisely fit the experimental data with a physical model. PC-1D provides a flexible platform for calculations based on these physical models.

Huber, D. A.↗

NASA NTRS1986

Investigation of high efficiency silicon MINP solar cells

This paper includes results of both theoretical and experimental studies of silicon metal insulator n/p cells. Performance calculations are described which give expected efficiencies as a function of base resistivity. Fabrication and characterization of cells are discussed, and detailed analyses of current loss mechanisms are presented. Using 0.2-ohm cm FZ material and Mg tunneling contacts, AM 1 efficiencies in the range of 16.5-17 percent have been achieved.

Olsen, L. C.↗

NASA NTRS1986

SiN sub x passivation of silicon surfaces

The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs.

Olsen, L. C.↗

NASA NTRS1985

High-efficiency silicon solar cells

Fabrication and characterization of high-efficiency metal insulator, n-p (MINP) cells is described. Particular attention was paid to development of measurement methods for surface recombination and density of surface states. A modified Rosier test structure was used successfully for density of surface states. Silicon oxide and silicon nitride passivants were studied. Heat treatment after plasma enhanced chemical vapor deposition (CVD) of silicon nitride was shown to be beneficial. A more optimum emitter concentration profile was modeled.

Olsen, L. C.↗

NASA NTRS1985

Silicon MINP solar cells

The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

Olsen, L. C.↗

NASA NTRS1984

Silicon surface passivation by silicon nitride deposition

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Olsen, L. C.↗

NASA NTRS1984

Investigation of silicon surface passivation by silicon nitride film deposition

The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

Olsen, L. C.↗

NASA NTRS1976

Collection efficiency measurements for solar cell research

A system was established for measuring absolute, spectral collection efficiency that is well suited to solar cell research and development. Determination of spectral collection efficiency involves measurements of the incident photon intensity, the device reflection coefficient, and the cell short circuit current. A monochromatic photon flux is obtained with a high intensity Bausch and Lomb monochromator, and an Epply thermopile detector is used to measure incident intensity. Normal incidence reflectivity measurements are achieved with a prism type beam splitter. The experimental approach is discussed, measurements of the reflectivity of evaporated silver films are considered. Collection efficiency measurements of silicon solar cells are presented, and collection efficiency studies of Cu20 solar cells are discussed.

Hampton, H. L.↗