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Nicolet, M.-A.

Publications and source records attributed to Nicolet, M.-A..

33 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Studies on the Al2O3-Ti-Mo-Au metallization system

The behavior of Ti-Mo-Au metallization on Al2O3 and C has been investigated by backscattering spectrometry. Results show that Mo-Au bimetal films typically mix during deposition. Diffusion of Ti in Mo film occurs at 600 C, but is inhibited by the presence of oxygen in the Ti film. Even 1000 A of Mo is not a barrier against interdiffusion of Ti and Au during 20-min anneals at 600 C. The amount of mixing observed also depends on the nature of the substrate which supports the Ti-Mo-Au metallization.

Harris, J. M.↗
NASA NTRS1973

Noise of space-charge-limited current in solids is thermal.

The white noise level of space-charge-limited current (SCLC) of holes in a silicon device measured at five temperatures ranging from 113 to 300 K is shown to be proportional to the absolute temperature. This proves experimentally the thermal origin of noise for SCLC in solids.

Golder, J.↗
NASA NTRS1972

Electron trapping in neutron-irradiated silicon studied by space-charge-limited current.

The trapping and detrapping of electrons is studied through measurements of space-charge-limited current in the temperature range of 77 to 293 K in high-purity silicon after irradiation with 14-MeV neutrons. A model is developed which describes most of the results quantitatively and self-consistently, including dc characteristics. Two distinct trap levels exist: the fast levels lie at 0.14 (plus or minus 0.005) eV below the conduction band, and the slow levels lie at 0.47 (plus or minus 0.01) eV below the conduction band. At 77 K, injected free electrons are initially captured by the fast 0.14-eV traps and then sink into the deep 0.47-eV traps, predominantly without being reemitted into the band. Above approximately 110 K, the detrapping rate from the shallow traps becomes so fast that the deep traps dominate. The results also offer a direct verification of the simple model of space-charge-limited current dominated by shallow and deep traps.

Quat, V. T.↗
NASA NTRS1965

Semiconductor research

Structure preparation for study of space charge limited current of electrons in silicon

ELECTRON FLUX↗