Engineering topics
Publications and source records attributed to Nichols, D. K..
Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.
The basic effects of ionizing radiation are summarized. The problem of the existence of a true dose rate effect is examined. Consideration is given to the nature of long term annealing, which is sometimes manifested as an 'apparent' dose rate effect. Both analytical and experimental work is considered and the results are related to practical testing requirements.
Radiation effect on silicon - introduction rates of vacancy-phosphorus defect and divacancy in p-type material for solar cell application
Density measurement of defects from Compton electrons formed by incident gamma irradiation
Displacement defects in silicon solar cells by high energy electron irradiation using electron spin resonance, galvanometric, excess carrier lifetime, and infrared absorption measurements