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Nelson, L. D.

Publications and source records attributed to Nelson, L. D..

The measurement of atmospheric water vapor - Radiometer comparison and spatial variations

Two water vapor radiometer (WVR) experiments were conducted to evaluate whether such instruments are both suitable and necessary to correct for propagation effects that are induced by precipitable water vapor (PWV) on signals from GPS and VLBI. WVRs are suitable for these corrections if they provide wet path delays to better than 0.5 cm. They are needed if spatial variations of PWV result in complicated, direction-dependent propagation effects that are too complex to be parametrized in the GPS or VLBI geodetic solution. The suitability of radiometers was first addressed by comparing six airport WVRs for two weeks. While two WVRs showed an average wet path delay bias of only 0.1 cm, others were biased by 1-3 cm relative to each other and relative to radiosondes. The second experiment addressed the question whether radiometers are needed for the detection of inhomogeneities in the wet delay. Three JPL D-series radiometers were operated at three sites 50 km apart. The WVRs simultaneously sampled PWV at different azimuths and elevations in search of spatial variations of PWV. On one day of this second experiment evidence was found for spatial variations of the wet path delay as high as 20 percent of the total wet path delay.

Rocken, C.

Top-Coating Silicon Onto Ceramic

Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

Heaps, J. D.

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The technical and economic feasibility of producing solar cell quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large grain polycrystalline silicon was investigated. The dip-coating methods studied were directed toward a minimum cost process with the ultimate objective of producing solar cells with a conversion efficiency of 10% or greater. The technique shows excellent promise for low cost, labor-saving, scale-up potentialities and would provide an end product of sheet silicon with a rigid and strong supportive backing. An experimental dip-coating facility was designed and constructed, several substrates were successfully dip-coated with areas as large as 25 sq cm and thicknesses of 12 micron to 250 micron. There appears to be no serious limitation on the area of a substrate that could be coated. Of the various substrate materials dip-coated, mullite appears to best satisfy the requirement of the program. An inexpensive process was developed for producing mullite in the desired geometry.

Heaps, J. D.

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

To date, an experimental dip-coating facility was constructed. Using this facility, relatively thin (1 mm) mullite and alumina substrates were successfully dip-coated with 2.5 - 3.0 ohm-cm, p-type silicon with areas of approximately 20 sq cm. The thickness and grain size of these coatings are influenced by the temperature of the melt and the rate at which the substrate is pulled from the melt. One mullite substrate had dendrite-like crystallites of the order of 1 mm wide and 1 to 2 cm long. Their axes were aligned along the direction of pulling. A large variety of substrate materials were purchased or developed enabling the program to commence a substrate definition evaluation. Due to the insulating nature of the substrate, the bottom layer of the p-n junction may have to be made via the top surface. The feasibility of accomplishing this was demonstrated using single crystal wafers.

Heaps, J. D.