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Nelson, D. A.

Publications and source records attributed to Nelson, D. A..

Interaction of finite-amplitude sound with air-filled porous materials

The propagation of high intensity sound waves through an air-filled porus material was studied. The material is assumed: (1) to be rigid, incompressible, and homogeneous, and (2) to be adequately described by two properties: resistivity r and porosity. The resulting wave equation is still nonlinear, however, because of the u sgn(u) term in the resistivity. The equation is solved in the frequency domain as an infinite set of coupled inhomogeneous Helmholtz equations, one for each harmonic. An approximate but analytical solution leads to predictions of excess attenuation, saturation, and phase speed reduction for the fundamental component. A more general numerical solution is used to calculate the propagation curves for the higher harmonics. The u sgn(u) nonlinearity produces a cubic distortion pattern; when the input signal is a pure tone, only odd harmonic distortion products are generated.

Nelson, D. A.

Mode of incorporation of phosphorus in Hg(0.8)Cd(0.2)Te

Selim and Kroeger (1977) have studied the mode of incorporation of phosphorus in CdTe. According to their findings, phosphorus behaves amphoterically in CdTe acting as an acceptor interstitially and on Te lattice sites, and as a triple donor on Cd lattice sites. The present investigation is concerned with the role of phosphorus in Hg(0.8)Cd(0.2)Te, taking into account Hall-effect and mobility measurements on phosphorus-doped crystals quenched from a temperature in the range from 450 to 600 C subsequent to anneals in different partial pressures of Hg. It is found that the behavior of phosphorus in Hg(0.8)Cd(0.2)Te is similar to that established for CdTe, except that all the electrically active phosphorus defect centers in Hg(0.8)Cd(0.2)Te appear to be only singly ionized. At low Hg pressure, phosphorus is incorporated as a single donor occupying Hg lattice sites, and at high Hg pressure, as a single acceptor on interstitial sites and Te lattice sites.

Vydyanath, H. R.

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Vydyanath, H. R.

Apollo experience report: Consumables budgeting

The procedures and techniques used in predicting the consumables usage for the Apollo mission are discussed. Because of the many interfaces and influences on the consumables system, it is impractical to document all facets of consumables budgeting; therefore, information in this report is limited to the major contributions to the formulation of a consumables budget.

Nelson, D. A.