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Naulleau, P

Publications and source records attributed to Naulleau, P.

Optical lithography

Optical lithography is a photon-based technique comprised of projecting an image into a photosensitive emulsion (photoresist) coated onto a substrate such as a silicon wafer. It is the most widely used lithography process in the high volume manufacturing of nano-electronics by the semiconductor industry. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information to be transferred very rapidly. For example, a modern leading edge lithography tool produces 150-300-mm patterned wafers per hour with 40-nm two-dimensional pattern resolution, yielding a pixel throughput of approximately 1.8T pixels/s. Continual advances in optical lithography capabilities have enabled the computing revolution over the past 50 years.

Naulleau, P↗

Achieving diffraction-limited performance on the Berkeley MET5

© 2019 SPIE. The Berkeley MET5, funded by EUREKA, is a 0.5-NA EUV projection lithography tool located at the Advanced Light Source at Berkeley National Lab. Wavefront measurements of the MET5 optic have been performed using a custom in-situ lateral shearing interferometer suitable for high-NA interferometry. In this paper, we report on the most recent characterization of the MET5 optic demonstrating an RMS wavefront 0.31 nm, and discuss the specialized mask patterns, gratings, and illumination geometries that were employed to accommodate the many challenges associated with high-NA EUV interferometry.

Miyakawa, R↗

Upgrade to the SHARP EUV mask microscope

© 2019 SPIE. The Sharp High-NA Actinic Reticle review Project (SHARP) is a synchrotron-based, extreme ultraviolet (EUV) microscope dedicated to photomask research. A potential upgrade to the SHARP microscope is presented. The upgrade includes changing the light path in the instrument from its current off-Axis configuration to an on-Axis configuration. This change allows for an increased working distance of 2.5 mm or more. A central obscuration, added to the zoneplate aperture, blocks stray light from reaching the central part of the image, thus improving the image contrast. The imaging performance of the two configurations is evaluated by means of ray tracing.

Benk, M↗