Altering the magnetic ordering of Fe[subscript 3]Ga[subscript 4] via thermal annealing and hydrostat
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Wilfong, Brandon↗
Engineering topics
Naphy, Jared
Publications and source records attributed to Naphy, Jared.
Using methodical compositional tuning to optimize Co x Tb 1− x structural and magnetic properties
The Co-rich end of the Co–Tb binary phase diagram (Co x Tb 1−x , x = 0.66–0.82) has been investigated to understand the phases which form in the bulk and how they interact to yield magnetic behavior which has been reported to be ideal for use in spintronic devices. Here, this work shows that the phases and phase fractions present across this composition range follow those predicted by the binary phase diagram, and all compounds in this composition range are multiphase. Magnetic measurements show similar behavior in this composition range to related thin film work, and we attribute the observed behavior to the respective binary phases present in each compound. Ideal magnetic behavior of minimized magnetic saturation and maximized coercivity is observed in the range of x= 0.78 − 0.80 related to the majority phase Co 7 Tb 2 in these two compounds. High pressure magnetic measurements show magnetic saturation and coercivity at 300 K change little with respect to external pressure. The extension of the synthesis of these binaries into the bulk allows for specific binary phases to be targeted and analyzed for consideration in future devices.
Crystal structure↗
Superconducting and antiferromagnetic properties of dual-phase V 3 Ga
The binary compound V 3 Ga can exhibit two near-equilibrium phases, the A15 structure that is superconducting and the Heusler D0 3 structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that these two phases are nearly degenerate, being separated in energy by only ±10 meV/atom. Our magnetization measurements on bulk-grown samples show antiferromagnetism and superconducting behavior below 14 K. Overall, these results indicate the possibility of using V 3 Ga for quantum technology devices exploiting the co-existence of superconductivity and antiferromagnetism in a dual-phase material.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗