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Mueller, Carl

Publications and source records attributed to Mueller, Carl.

7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2015

Characterization of an In-Situ Ground Terminal via a Geostationary Satellite

In 2015, the Space Communications and Navigation (SCaN) Testbed project completed an S-Band ground station located at the NASA Glenn Research Center in Cleveland, Ohio. This S-Band ground station was developed to create a fully characterized and controllable dynamic link environment when testing novel communication techniques for Software Defined Radios and Cognitive Communication Systems. In order to provide a useful environment for potential experimenters, it was necessary to characterize various RF devices at both the component level in the laboratory and at the system level after integration. This paper will discuss some of the laboratory testing of the ground station components, with a particular focus emphasis on the near-field measurements of the antenna. It will then describe the methodology for characterizing the installed ground station at the system level via a Tracking and Data Relay Satellite (TDRS), with specific focus given to the characterization of the ground station antenna pattern, where the max TDRS transmit power limited the validity of the non-noise floor received power data to the antenna main lobe region. Finally, the paper compares the results of each test as well as provides lessons learned from this type of testing methodology.

Radiation Pattern Analysis↗
NASA NTRS2015

Compatibility of the Radio Frequency Mass Gauge with Composite Tanks

The radio frequency mass gauge (RFMG) is a low-gravity propellant quantity gauge being developed at NASA for possible use in long-duration space missions utilizing cryogenic propellants. As part of the RFMG technology development process, we evaluated the compatibility of the RFMG with a graphite-epoxy composite material used to construct propellant tanks. The key material property that can affect compatibility with the RFMG is the electrical conductivity. Using samples of 8552IM7 graphite-epoxy composite, we characterized the resistivity and reflectivity over a range of frequencies. An RF impedance analyzer was used to characterize the out-of-plane electrical properties (along the sample thickness) in the frequency range 10 to 1800 MHZ. The resistivity value at 500 MHz was 4.8 ohm-cm. Microwave waveguide measurements of samples in the range 1.7 2.6 GHz, performed by inserting the samples into a WR-430 waveguide, showed reflectivity values above 98. Together, these results suggested that a tank constructed from graphite-epoxy composite would produce good quality electromagnetic tank modes, which is needed for the RFMG. This was verified by room-temperature measurements of the electromagnetic modes of a 2.4 m diameter tank constructed by Boeing from similar graphite-epoxy composite material. The quality factor Q of the tank electromagnetic modes, measured via RF reflection measurements from an antenna mounted in the tank, was typically in the range 400 Q 3000. The good quality modes observed in the tank indicate that the RFMG is compatible with graphite-epoxy tanks, and thus the RFMG could be used as a low-gravity propellant quantity gauge in such tanks filled with cryogenic propellants.

Radio frequencies↗
NASA NTRS2006

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, highspeed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits. The development of these polymerbased FETs offers advantages over the competing development of FETs based on carbon nanotubes. Whereas it is difficult to control the molecular structures and, hence, the electrical properties of carbon nanotubes, it is easy to tailor the electrical properties of these polymerbased FETs, throughout the range from insulating through semiconducting to metallic, through choices of doping levels and chemical manipulation of polymer side chains. A further advantage of doped PANi/PEO nanofibers is that they can be made to draw very small currents and operate at low voltage levels, and thus are promising for applications in which there are requirements to use many FETs to obtain large computational capabilities while minimizing power demands. Fabrication of an experimental FET in this family begins with the preparation of a substrate as follows: A layer of silicon dioxide between 50 and 200 nm thick is deposited on a highly doped (resistivity 0.01 W.cm) silicon substrate, then gold electrodes/contact stripes are deposited on the oxide. Next, one or more fibers of camphorsulphonic acid-doped PANi/PEO having diameters of the order of 100 nm are electrospun onto the substrate so as to span the gap between the gold electrodes (see Figure 1). Figure 2 depicts measured current-versus-voltage characteristics of the device of Figure 1, showing that saturation channel currents occur at source-todrain potentials that are surprisingly low, relative to those of CMOS FETs. The hole mobility in the depletion regime in this transistor was found to be 1.4 10(exp -4) sq cm/(V.s), while the one-dimensional charge density at zero gate bias was estimated to be approximately one hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content of the fibers is expected to enhance the properties of future versions of this transistor.

Theofylaktos, Noulie↗
NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗
NASA NTRS2004

High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested.

Mueller, Carl↗
NASA NTRS2001

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Subramanyam, Guru↗