Engineering topics
Publications and source records attributed to Morrison, A. D..
NASA will provide the antenna and RF subsystem to the MARSIS radar sounder. There are 11 U.S. Co-Investigators for the science investigations, and navigation and data archiving support are also provided. ASPERA-3 receives NASA Discovery Program funding. Additional information is contained in the original extended abstract.
Flow patterns and velocities controlled to improve cystals. According to proposal, intense sound used to induce flow in molten silicon to increase quality of crystals grown in shallow-melt Czochralski process.
Proposed improvement for silicon crystal growing enables rapid heating of melt in vicinity of liquid-solid interface to compensate for decreases in melt temperature, to ensure uniform diameter and composition in ingot. Intended for growing large silicon ingots by Czochralski process, cylindrical single-crystal ingot pulled from molten silicon. Heating confined to small mass near growing crystal.
Silicon particles continuously removed from bottom of fluidizedbed reactor when grown to large size. In reactor, silane (SiH4) flows through bed of small silicon seed particles at temperature of 650 degrees to 700 degrees C. Silane decomposes into silicon vapor and hydrogen gas, and vapor deposits as solid on seed particles. With withdrawal system, reactor operates continuously.
Contamination reduced in modified growth system. In Silicon-ribbongrowth apparatus, capillary filament guides are integral parts of crucible, extending from bottom to top of melt. Addition of guides expected to result in better thermal control of growth process and higher silicon purity.
The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities.
Gas pyrolysis in hot fluidized beds minimized by use of selectively filtered radiation and parabolic cavity. Reactor is parabolic cavity of two or more axes in which light emanating from one axis bounces off walls of cavity and passes through object axis to heat sample.
Concept increases productivity and wafer quality. Cutting wafers from silicon ingots produces smooth wafers at high rates with reduced blade wear. Involves straight reciprocating saw blade and slight rotation of ingot between cutting strokes. Many parallel blades combined to cut many wafers simultaneously from ingot.
Inserts incorporated in support beams for silicon ingots automatically "dress" cutting blade during wafer slicing. Segments of blade-dressing material placed at regular intervals in graphite beam. Blade cuts into segments and dressed without operator intervention and without interrupting regular machine operation. Manual dressing eliminated, and production rates increased.
Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.
Feedback system assures production of silicon shot of uniform size. Breakup of silicon stream into drops is controlled, in part, by varying frequency of vibrations imparted to stream by ultrasonic transducer. Drop size monitored by photodetector. Control method particularly advantageous in that constant size is maintained even while other process variables are changed deliberately or inadvertently. Applicable to materials other than silicon.
The cost involved in the performance of the standard operations for the manufacture of silicon wafers is insignificant in the case of space photovoltaics applications. It is, however, a decisive factor with respect to terrestrial applications of silicon photovoltaic devices. In 1975, a program was, therefore, begun to develop low cost silicon solar arrays for terrestrial applications. The goal was silicon-based photovoltaic (PV) modules ready for installation at a selling price of $0.50/watt (1975 dollars). Sheet and ribbon silicon growth held out the promise of reduced cost through continuous operation, high material throughput, high material utilization efficiency, and a product whose shape lent itself to the assembly of high packing density modules. Attention is given to ribbon growth technologies, sheet technology generic problems, and ribbon cell and module technology status. It is concluded that the potential for crystalline ribbon silicon appears to be better today than ever before.
A set of computer models was used to define a growth system configuration that was then built and used to grow web with lower thermally generated stress. Aspects of research in the edge-defined film-fed growth (EFG) method of making Si ribbon are reported. A technique was developed to determine base resistivity and carrier lifetime in semicrystalline wafers. Automated growth of 150 kg of 15 cm-dia ingot material per crucible is reviewed. Scanning transmisson electron microscopy (STEM) and microprobe investigations of processed EFG ribbon are reported. The chemical composition of the large precipitates was studied. The structural arrangement and the electrical activity of distentions or close to the central twin plane in processed material were studied. The electrical and structural properties of grain boundaries in silicon are discussed. Temperature-dependence measurements of zero-bias conductance, a photoconductivity technique, and deep-level transient spectroscopy (DLTS) were developed. A grooving and staining technique, secondary ion mass spectroscopy, and EBIC measurements in scanning electron microscopy were used to study enhanced diffusion of phosphorus at grain boundaries in polycrystaline silicon. The fundamental mechanisms of abrasion and wear and the deformation of Si by a diamond in various fluid environments are described. The efficiency of solar cells made from EFG ribbon and Semix Inc. material is reported.
The technology and economics of silicon ingot wafering for low cost solar arrays were discussed. Fixed and free abrasive sawing wire, ID, and multiblade sawing, materials, mechanisms, characterization, and innovative concepts were considered.
Photovoltaics is subject of an extensive technology assessment in terms of its net energy potential as an alternate energy source. Reduction of quartzite pebbles, refinement, crystal growth, cell processing and panel building are evaluated for energy expenditure compared to direct, indirect, and overhead energies.
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Sustained growth of long lengths of silicon ribbons by the edge-defined film-fed growth (EFG) technique is shown to result in the attainment of an 'equilibrium' defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a specific ribbon orientation. The influence of seed orientation on the attainment of this structure has been examined.
Progress in a program to produce high speed, thin, wide silicon sheets for fabricating 10% efficient solar cells is reported. An EFG ribbon growth system was used to perform growth rate and ribbon thickness experiments. A new, wide ribbon growth system was developed. A theoretical study of stresses in ribbons was also conducted. The EFG ribbons were observed to exhibit a characteristic defect structure which is orientation dependent in the early stages of growth.