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Misra, A

Publications and source records attributed to Misra, A.

10 records
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DOE OSTI2014

Design of radiation resistant metallic multilayers for advanced nuclear systems

Helium implantation from transmutation reactions is a major cause of embrittlement and dimensional instability of structural components in nuclear energy systems. Development of novel materials with improved radiation resistance, which is of the utmost importance for progress in nuclear energy, requires guidelines to arrive at favorable parameters more efficiently. Here, we present a methodology that can be used for the design of radiation tolerant materials. We used synchrotron X-ray reflectivity to nondestructively study radiation effects at buried interfaces and measure swelling induced by He implantation in Cu/Nb multilayers. The results, supported by transmission electron microscopy, show a direct correlation between reduced swelling in nanoscale multilayers and increased interface area per unit volume, consistent with helium storage in Cu/Nb interfaces in forms that minimize dimensional changes. In addition, for Cu/Nb layers, a linear relationship is demonstrated between the measured depth-dependent swelling and implanted He density from simulations, making the reflectivity technique a powerful tool for heuristic material design.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect interactions with stepped CeO{sub 2}/SrTiO{sub 3} interfaces: Implications for radiation damage evolution and fast ion conduction

Due to reduced dimensions and increased interfacial content, nanocomposite oxides offer improved functionalities in a wide variety of advanced technological applications, including their potential use as radiation tolerant materials. To better understand the role of interface structures in influencing the radiation damage tolerance of oxides, we have conducted atomistic calculations to elucidate the behavior of radiation-induced point defects (vacancies and interstitials) at interface steps in a model CeO{sub 2}/SrTiO{sub 3} system. We find that atomic-scale steps at the interface have substantial influence on the defect behavior, which ultimately dictate the material performance in hostile irradiation environments. Distinctive steps react dissimilarly to cation and anion defects, effectively becoming biased sinks for different types of defects. Steps also attract cation interstitials, leaving behind an excess of immobile vacancies. Further, defects introduce significant structural and chemical distortions primarily at the steps. These two factors are plausible origins for the enhanced amorphization at steps seen in our recent experiments. The present work indicates that comprehensive examination of the interaction of radiation-induced point defects with the atomic-scale topology and defect structure of heterointerfaces is essential to evaluate the radiation tolerance of nanocomposites. Finally, our results have implications for other applications, such as fast ion conduction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Role of the interface on radiation damage in the SrTiO{sub 3}/LaAlO{sub 3} heterostructure under Ne{sup 2+} ion irradiation

We systematically investigated the microstructural evolution of heteroepitaxial SrTiO{sub 3} (STO) thin films grown on a single crystal LaAlO{sub 3} (LAO) (001) substrate, focusing on the response of the STO/LAO interface to Ne{sup 2+} irradiation at room temperature. Cross sectional transmission electron microscope (TEM) analysis reveals that the LAO crystal amorphizes first after a relatively low dose of damage followed by the amorphization of the STO film after irradiation to a higher dose. While the critical dose to amorphize differs between each material, amorphization begins at the interface and proceeds outward in both cases. Thus, a crystalline/amorphous interface first forms at the STO/LAO interface by a dose of 1 dpa, and then an amorphous/amorphous interface forms when the dose reaches 3 dpa. Scanning TEM and x-ray energy dispersive spectroscopy indicate no significant heavy cation elemental diffusion, though electron energy loss spectroscopy reveals a redistribution of oxygen across the film/substrate interface after Ne{sup 2+} irradiation. Atomistic calculations are used to interpret the experimental findings in terms of the defect properties in each of the two component phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗