Engineering topics

Miranda, Felix A.

Publications and source records attributed to Miranda, Felix A..

125 records · Page 7

NASA NTRS2000

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

Miranda, Felix A.↗

NASA NTRS2000

Analysis and Optimization of Thin Film Ferroelectric Phase Shifters

Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

Romanofsky, Robert R.↗

NASA NTRS1999

Characterization of (Ba(0.5)Sr(0.5)) TiO3 Thin Films for Ku-Band Phase Shifters

The microstructural properties of (Ba(0.5)Sr(0.5)TiO3) (BSTO) thin films (300, 700, and 1400 nm thick) deposited on LaAlO3 (LAO) substrates were characterized using high-resolution x-ray diffractometry. Film crystallinity was the parameter that most directly influenced tunability, and we observed that a) the crystalline quality was highest in the thinnest film and progressively degraded with increasing film thickness; and b) strain at the film/substrate interface was completely relieved via dislocation formation. Paraelectric films such as BSTO offer an attractive means of incorporating low-cost phase shifter circuitry into beam-steerable reflectarray antennas.

Mueller, Carl H.↗

NASA NTRS1999

High Temperature Superconductor/Semiconductor Hybrid Microwave Devices and Circuits

Contents include following: film deposition technique; laser ablation; magnetron sputtering; sequential evaporation; microwave substrates; film characterization at microwave frequencies; complex conductivity; magnetic penetration depth; surface impedance; planar single-mode filters; small antennas; antenna arrays phase noise; tunable oscillations; hybrid superconductor/semiconductor receiver front ends; and noise modeling.

Romanofsky, Robert R.↗

NASA NTRS1998

Method and Apparatus for Testing Microwave Devices and Circuits in a Controlled Environment

A test system is disclosed that enables the testing of microwave components in a controlled environment without disturbing that environment. The system includes a test fixture which holds the calibration standards and the component being tested, and environmental control chamber, and a microwave switching system. The system provides a coaxial connection to microwave testing equipment, such as an automatic network analyzer (ANA) and facilitates both calibration and testing while maintaining environmental integrity.

Miranda, Felix A.↗

NASA NTRS1998

A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

Subramanyam, Guru↗

NASA NTRS1998

A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

Romanofsky, Robert R.↗

NASA NTRS1998

High-Temperature Superconducting/Ferroelectric, Tunable Thin-Film Microwave Components

At the NASA Lewis Research Center, ferroelectric films such as SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3, are being used in conjunction with YBa(sub 2)Cu(sub 3)O(sub 7-delta) high-temperature superconducting thin films to fabricate tunable microwave components such as filters, phase shifters, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a direct-current electric field, as well as on the low microwave losses of high-temperature superconductors relative to their conventional conductor counterparts. For example, the surface resistance for a YBa(sub 2)Cu(sub 3)O(sub 7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper or gold at the same temperature and frequency. SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa(sub 2)Cu(sub 3)O(sub 7-delta), thus enabling the growth of highly textured YBa(sub 2)Cu(sub 3)O(sub 7-delta) films with high critical current densities (i.e., greater than 1 MA/sq cm) on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa(sub 2)Cu(sub 3)O(sub 7-delta) film.

Miranda, Felix A.↗

NASA NTRS1998

Tunable Dielectric Materials and Devices for Broadband Wireless Communications

Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies. The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and Ka-band (26.5-40 GHz) is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium Strontium Titanate ((Ba, Sr)TiO3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the potential of tunable dielectric technology for broadband wireless communication applications. In this chapter we summarize how film processing techniques, microwave test configurations, and prototype devices have combined to drive the field to its current stage of development.

Mueller, Carl H.↗

NASA NTRS1997

Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.

Miranda, Felix A.↗

NASA NTRS1997

High-Temperature Superconducting/Ferroelectric Structures for Tunable Microwave Components

At the NASA Lewis Research Center, ferroelectric films, such as SrTiO3 and Ba(x)Sr(1-x)TiO3, are being used in conjunction with YBa2Cu3O(7-delta) high-temperature superconducting (HTS) thin films to fabricate tunable microwave components, such as filters, varactors, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a dc electric field as well as on the low microwave losses exhibited by the high-temperature superconducting films relative to their conventional conductor counterparts. (For example, the surface resistance for a YBa2Cu3O(7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper at the same frequency and temperature.) SrTiO3 and Ba(x)Sr(1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa2Cu3O(7-delta), thus enabling the growth of highly textured YBa2Cu3O(7-delta) films with high critical current densities on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa2Cu3O(7-delta) film. Our efforts have been concentrated so far in determining the deposition parameters required for optimal ferroelectric thin-film growth (i.e., maximum tunability and lowest loss) and in investigating different varactor configurations to determine which geometry is the most advantageous in terms of tunability, losses, and required bias for a given communication application. For example, we have observed that for optimized SrTiO3 films in a parallel plate capacitor, tunabilities of up to 47 percent and dissipation losses (tan d) of 0.05 are attainable at 1 MHz , 80 K, and within the 0- to 5-V bias range. In contrast, for an interdigital configuration, tunabilities of up to 70 percent and tan d ranging from 0.015 to 0.001 (depending on bias) have been observed at 1 MHz and 77 K within the 0- to 100-V bias range. Efforts are underway to use these results in developing tunable receiver front-end preselect filters as well as in low-phase noise, tunable local oscillators for K-band applications. These components represent a hitherto unavailable technology to meet the stringent performance requirements of foreseeable satellite and wireless communication systems (e.g., bandwidth, in-band insertion losses, out-of-band rejection, and noise, amongst others) in a more advantageous fashion than with currently available technology (e.g., dielectric-filled cavity and waveguide filters, and dielectric resonator oscillators). Prototypes of high-temperature superconducting/ferroelectric tunable components such as a low-phase noise K-band local oscillator, a preselect C-band filter, and a low-loss K-band phase shifter are under development at NASA Lewis.

Miranda, Felix A.↗

NASA NTRS1997

Miniaturized High-Temperature Superconducting/Dielectric Multilayer Filters for Satellite Communications

Most communication satellites contain well over a hundred filters in their payload. Current technology in typical satellite multiplexers use dual-mode cavity or dielectric resonator filters that are large (approx. 25 to 125 cu in) and heavy (up to 600 g). As the complexity of future advanced electronic systems for satellite communications increases, even more filters will be needed, requiring filter miniaturization without performance degradation. Such improvements in filter technology will enhance satellite performance. To reduce the size, weight, and cost of the multiplexers without compromising performance, the NASA Lewis Research Center is collaborating with industry to develop a new class of dual-mode multilayer filters consisting of YBa2Cu3O7-delta high-temperature superconducting (HTS) thin films on LaAlO3 substrates.

Miranda, Felix A.↗

NASA NTRS1992

Magnetic penetration depth of YBa2Cu3O(7-delta) thin films determined by the power transmission method

A power transmission measurement technique was used to determine the magnetic penetration depth (lambda) of YBa2Cu3O(7-delta) superconducting thin films on LaAlO3 within the 26.5 to 40.0 GHz frequency range, and at temperatures from 20 to 300 K. Values of lambda ranging from 1100 to 2500 A were obtained at low temperatures. The anisotropy of lambda was determined from measurements of c-axis and a-axis oriented films. An estimate of the intrinsic value of lambda of 90 +/- 30 nm was obtained from the dependence of lambda on film thickness. The advantage of this technique is that it allows lambda to be determined nondestructively.

Heinen, Vernon O.↗

NASA NTRS1992

Conductor-backed coplanar waveguide resonators of YBa2Cu3O(7-delta) on LaAlO3

Conductor-backed coplanar waveguide (CBCPW) resonators operating at 10.8 GHz have been fabricated from laser ablated and off-axis magnetron sputtered YBa2Cu3O(7-delta) (YBCO) high-temperature superconducting (HTS) thin films on LaAlO3. These resonators were tested in the temperature range from 14 to 92 K. The unloaded quality factor at 77 K of the HTS CBCPW resonators was 3 to 4 times that of a similar gold resonator. To the authors' knowledge, these results represent the first reported measurements of HTS-based CBCPW resonators.

Miranda, Felix A.↗

NASA NTRS1991

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

Warner, Joseph D.↗

NASA NTRS1990

Measurements of complex permittivity of microwave substrates in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

A knowledge of the dielectric properties of microwve substrates at low temperatures is useful in the design of superconducting microwave circuits. Results are reported for a study of the complex permittivity of sapphire (Al2O3), magnesium oxide (MgO), silicon oxide (SiO2), lanthanum aluminate (LaAlO3), and zirconium oxide (ZrO2), in the 20 to 300 Kelvin temperature range, at frequencies from 26.5 to 40.0 GHz. The values of the real and imaginary parts of the complex permittivity were obtained from the scattering parameters, which were measured using an HP-8510 automatic network analyzer. For these measurements, the samples were mounted on the cold head of a helium gas closed cycle refrigerator, in a specially designated vacuum chamber. An arrangement of wave guides, with mica windows, was used to connect the cooling system to the network analyzer. A decrease in the value of the real part of the complex permittivity of these substrates, with decreasing temperature, was observed. For MgO and Al2O3, the decrease from room temperature to 20 K was of 7 and 15 percent, respectively. For LaAlO3, it decreased by 14 percent, for ZrO2 by 15 percent, and for SiO2 by 2 percent, in the above mentioned temperature range.

Miranda, Felix A.↗

NASA NTRS1989

Measurements of complex permittivity of microwave substrates in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

A knowledge of the dielectric properties of microwave substrates at low temperatures is useful in the design of superconducting microwave circuits. Results are reported for a study of the complex permittivity of sapphire (Al2O3), magnesium oxide (MgO), silicon oxide (SiO2), lanthanum aluminate (LaAlO3), and zirconium oxide (ZrO2), in the 20 to 300 Kelvin temperature range, at frequencies from 26.5 to 40.0 GHz. The values of the real and imaginary parts of the complex permittivity were obtained from the scattering parameters, which were measured using a HP-8510 automatic network analyzer. For these measurements, the samples were mounted on the cold head of a helium gas closed cycle refrigerator, in a specially designed vacuum chamber. An arrangement of wave guides, with mica windows, was used to connect the cooling system to the network analyzer. A decrease in the value of the real part of the complex permittivity of these substrates, with decreasing temperature, was observed. For MgO and Al2O3, the decrease from room temperature to 20 K was of 7 and 15 percent, respectively. For LaAlO3, it decreased by 14 percent, for ZrO2 by 15 percent, and for SiO2 by 2 percent, in the above mentioned temperature range.

Miranda, Felix A.↗