Engineering topics

Meyyappan, M.

Publications and source records attributed to Meyyappan, M..

88 records · Page 5

NASA NTRS1999

Feature Profile Evolution of SiO2 Trenches In Fluorocarbon Plasmas

Etching of silicon microstructures for semiconductor manufacturing in chlorine plasmas has been well characterized. The etching proceeds in a two-part process, where the chlorine neutrals passivate the Si surface and then the ions etch away SiClx. However, etching in more complicated gas mixtures and materials, such as etching of SiO2 in Ar/C4F8, requires knowledge of the ion and neutral distribution functions as a function of angle and velocity, in addition to modeling the gas surface reactions. In order to address these needs, we have developed and integrated a suite of models to simulate the etching process from the plasma reactor level to the feature profile evolution level. This arrangement allows for a better understanding, control, and prediction of the influence of equipment level process parameters on feature profile evolution. We are currently using the HPEM (Hybrid Plasma Equipment Model) and PCMCM (Plasma Chemistry Monte Carlo Model) to generate plasma properties and ion and neutral distribution functions for argon/fluorocarbon discharges in a GEC Reference Cell. These quantities are then input to the feature scale model, Simulation of Profile Evolution by Level Sets (SPELS). A surface chemistry model is used to determine the interaction of the incoming species with the substrate material and simulate the evolution of the trench profile. The impact of change of gas pressure and inductive power on the relative flux of CFx and F to the wafer, the etch and polymerization rates, and feature profiles will be examined. Comparisons to experimental profiles will also be presented.

Hwang, Helen↗

NASA NTRS1999

Ion Transport Modeling in Non-Collisional RF Sheaths

A reactor scale ICP plasma model does not adequately resolve the submillimeter scale rf sheaths due to severe disparities in length and times scales. These non-collisional sheaths determine the spread in the ion bombardment energy distribution on the wafer. Analytical models based on "damped potential" has been used by various authors to simplify sheath modeling. However, inherent in these models are some assumptions that may be invalid. In this work we show that simplifying assumptions such as a uniform ion flux may be in error by as much as 200% at 13.56MHz. This work involves solving ion transport in non-collisional rf sheaths. A comprehensive study of the dependence of ion flux and energy on uncertainties in the sheath-presheath (i.e. sheath thickness) boundary will also be done.

Meyyappan, M.↗

NASA NTRS1999

ICP Reactor Modeling: CF4 Discharge

Inductively coupled plasma (ICP) reactors are widely used now for etching and deposition applications due to their simpler design compared to other high density sources. Plasma reactor modeling has been playing an important role since it can, in principle, reduce the number of trial and error iterations in the design process and provide valuable understanding of mechanisms. Fluorocarbon precursors have been the choice for oxide etching. We have data available on CF4 from our laboratory. These are current voltage characteristics, La.ngmuir probe data, UV-absorption, and mass spectrometry measurements in a GEC-ICP reactor. We have developed a comprehensive model for ICP reactors which couples plasma generation and transport and neutral species dynamics with the gas flow equations. The model has been verified by comparison with experimental results for a nitrogen discharge in an ICP reactor. In the present work, the model has been applied to CF4 discharge and compared to available experimental data.

Bose, Deepak↗

NASA NTRS1998

Profile Evolution Simulation in Etching Systems Using Level Set Methods

Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string method (bottom row) predict tapered profiles. The LSPES uses an AD with a FWHM = 13.5 degrees, and rude's model uses a ratio of sheath voltage to ion temperature of 50. The more anisotropic IADs produce profiles with more vertical sidewalls and a wider bottom surface, as shown in the right hand column. Here, the LSPES has an AD with a FWHM = 2 degrees, and rude's model uses a ratio of 500 of sheath voltage to ion temperature. The agreement between the LSPES and rude's model is excellent in both cases. We will present etching profiles generated by the LSPES, including calculations of the re-emitted fluxes of both neutrals and ions off of the profile walls. In addition, we will show the effect of geometric structures (overhangs, etc.) on the etching profiles. Other physical aspects, such as surface diffusion, will also be included in the model.

Hwang, Helen H.↗

NASA NTRS1998

A Coupled Plasma Dynamics and Gas Flow Model for Semiconductor Processing

A continuum modeling approach by self-consistently coupling plasma dynamics and gas flow will be presented for the analysis of high density plasma reactors. Experimental data shows that gas flow distribution affects the etch rate uniformity even at low pressures (6-20 mTorr) and flow rates (20-70 sccm). This study will investigate the effects of gas flow and gas energy on bulk plasma densities and temperatures using a continuum model. The model solves multidimensional equations of mass balance for neutrals and ions, gas momentum, separate energy equations for electrons and neutrals and Maxwell's equations for power coupling. A test case of N2 plasma in a 300mm TCP etch reactor, for which hybrid model and Langmuir probe data are available, is chosen for this analysis. Our preliminary results show that modeling gas flow and energy improves the predictions of electron density and its spatial variation in the reactor when compared with the experimental data. The aim of this study is to identify the operating conditions for the TCP reactor when a self-consistent modeling of gas flow is important.

Bose, Deepak↗

NASA NTRS1998

Large-Scale Processing of Carbon Nanotubes

Scale-up difficulties and high energy costs are two of the more important factors that limit the availability of various types of nanotube carbon. While several approaches are known for producing nanotube carbon, the high-powered reactors typically produce nanotubes at rates measured in only grams per hour and operate at temperatures in excess of 1000 C. These scale-up and energy challenges must be overcome before nanotube carbon can become practical for high-consumption structural and mechanical applications. This presentation examines the issues associated with using various nanotube production methods at larger scales, and discusses research being performed at NASA Ames Research Center on carbon nanotube reactor technology.

Finn, John↗

NASA NTRS1998

A Computational Chemistry Database for Semiconductor Processing

The concept of 'virtual reactor' or 'virtual prototyping' has received much attention recently in the semiconductor industry. Commercial codes to simulate thermal CVD and plasma processes have become available to aid in equipment and process design efforts, The virtual prototyping effort would go nowhere if codes do not come with a reliable database of chemical and physical properties of gases involved in semiconductor processing. Commercial code vendors have no capabilities to generate such a database, rather leave the task to the user of finding whatever is needed. While individual investigations of interesting chemical systems continue at Universities, there has not been any large scale effort to create a database. In this presentation, we outline our efforts in this area. Our effort focuses on the following five areas: 1. Thermal CVD reaction mechanism and rate constants. 2. Thermochemical properties. 3. Transport properties.4. Electron-molecule collision cross sections. and 5. Gas-surface interactions.

Jaffe, R.↗

NASA NTRS1998

Simulation of Etching Profiles Using Level Sets

Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

Hwang, Helen↗

NASA NTRS1998

Large-Scale Processing of Carbon Nanotubes

Finn, John↗

NASA NTRS1997

Predictive Modeling in Plasma Reactor and Process Design

Research continues toward the improvement and increased understanding of high-density plasma tools. Such reactor systems are lauded for their independent control of ion flux and energy enabling high etch rates with low ion damage and for their improved ion velocity anisotropy resulting from thin collisionless sheaths and low neutral pressures. Still, with the transition to 300 mm processing, achieving etch uniformity and high etch rates concurrently may be a formidable task for such large diameter wafers for which computational modeling can play an important role in successful reactor and process design. The inductively coupled plasma (ICP) reactor is the focus of the present investigation. The present work attempts to understand the fundamental physical phenomena of such systems through computational modeling. Simulations will be presented using both computational fluid dynamics (CFD) techniques and the direct simulation Monte Carlo (DSMC) method for argon and chlorine discharges. ICP reactors generally operate at pressures on the order of 1 to 10 mTorr. At such low pressures, rarefaction can be significant to the degree that the constitutive relations used in typical CFD techniques become invalid and a particle simulation must be employed. This work will assess the extent to which CFD can be applied and evaluate the degree to which accuracy is lost in prediction of the phenomenon of interest; i.e., etch rate. If the CFD approach is found reasonably accurate and bench-marked with DSMC and experimental results, it has the potential to serve as a design tool due to the rapid time relative to DSMC. The continuum CFD simulation solves the governing equations for plasma flow using a finite difference technique with an implicit Gauss-Seidel Line Relaxation method for time marching toward a converged solution. The equation set consists of mass conservation for each species, separate energy equations for the electrons and heavy species, and momentum equations for the gas. The sheath is modeled by imposing the Bohm velocity to the ions near the walls. The DSMC method simulates each constituent of the gas as a separate species which would be analogous in CFD to employing separate species mass, momentum, and energy equations. All particles including electrons are moved and allowed to collide with one another with the stipulation that the electrons remain tied to the ions consistent with the concept of ambipolar diffusion. The velocities of the electrons are allowed to be modified during collisions and are not confined to a Maxwellian distribution. These benefits come at a price in terms of computational time and memory. The DSMC and CFD are made as consistent as possible by using similar chemistry and power deposition models. Although the comparison of CFD and DSMC is interesting, the main goal of this work is the increased understanding of high-density plasma flowfields that can then direct improvements in both techniques. This work is unique in the level of the physical models employed in both the DSMC and CFD for high-density plasma reactor applications. For example, the electrons are simulated in the present DSMC work which has not been done before for low temperature plasma processing problems. In the CFD approach, for the first time, the charged particle transport (discharge physics) has been self-consistently coupled to the gas flow and heat transfer.

Hash, D. B.↗

NASA NTRS1987

Thermocapillary migration of a gas bubble in an arbitrary direction with respect to a plane surface

The thermocapillary migration of a gas bubble in an unbounded fluid in the presence of a neighboring rigid plane surface is considered in the limit of negligible Reynolds and Marangoni numbers. Results are given for a scalar interaction parameter defined as the ratio of the speed of the bubble in the presence of the plane surface to the speed in its absence. It is suggested that the weaker interaction effects noted for the case of thermocapillary migration relative to the case of motion due to a body force such as that caused by a gravitational field is attributable to the more rapid decay, away from the bubble, of the disturbance velocity and temperature gradient fields. The surface is found to exert the greatest influence in the case of motion normal to it, and the weakest influence in the case of parallel motion.

Meyyappan, M.↗

NASA NTRS1984

The thermocapillary motion of two bubbles oriented arbitrarily relative to a thermal gradient

The interaction problem of two bubbles oriented at an arbitrary angle to a thermal gradient in the absence of gravity is studied. The problem is considered in the quasi-static limit, wherein unsteady and convective transport terms are completely neglected in the momentum and energy equations. Instead of bipolar coordinates, an approximation used in a previous analysis of the interaction effects of two bubbles moving along their line of centers in a thermal gradient is applied here to predict the interaction parameter.

Meyyappan, M.↗

NASA NTRS1982

Interaction effects in thermocapillary bubble migration

Two bubbles migrating along their line of centers under the influence of an imposed thermal gradient are considered in the quasi-static limit. Results are reported for representative values of the governing parameters.

Meyyappan, M.↗

NASA NTRS1982

Experimental observation of the thermocapillary driven motion of bubbles in a molten glass under low gravity conditions

An experiment was carried out on board a Space Processing Applications Rocket with the aim of demonstrating bubble migration in molten glass due to a temperature gradient under low gravity conditions. During the flight, a sample of a sodium borate melt with a specific bubble array, contained in a platinum/fused silica cell, was subjected to a well defined temperature gradient for more than 4 minutes. Photographs taken at one second intervals during the experiment clearly show that the bubbles move toward the hot spot on the platinum heater strip. This result is consistent with the predictions of the theory of thermocapillary driven bubble motion.

Smith, H. D.↗

NASA NTRS1982

Bubble behavior in molten glass in a temperature gradient

Gas bubble motion in a temperature gradient was observed in a sodium borate melt in a reduced gravity rocket experiment under the NASA SPAR program. Large bubbles tended to move faster than smaller ones, as predicted by theory. When the bubbles contacted a heated platinum strip, motion virtually ceased because the melt only imperfectly wets platinum. In some cases bubble diameter increased noticeably with time.

Meyyappan, M.↗

NASA NTRS1981

A preliminary analysis of the data from experiment 77-13 and final report on glass fining experiments in zero gravity

Thermal fining, thermal migration of bubbles under reduced gravity conditions, and data to verify current theoretical models of bubble location and temperatures as a function of time are discussed. A sample, sodium borate glass, was tested during 5 to 6 minutes of zero gravity during rocket flight. The test cell contained a heater strip; thermocouples were in the sample. At present quantitative data are insufficient to confirm results of theoretical calculations.

Wilcox, W. R.↗