Engineering topics

Meyyappan, M.

Publications and source records attributed to Meyyappan, M..

At least 55 records · Page 3

NASA NTRS2002

Modeling of the HiPco process for carbon nanotube production. I. Chemical kinetics

A chemical kinetic model is developed to help understand and optimize the production of single-walled carbon nanotubes via the high-pressure carbon monoxide (HiPco) process, which employs iron pentacarbonyl as the catalyst precursor and carbon monoxide as the carbon feedstock. The model separates the HiPco process into three steps, precursor decomposition, catalyst growth and evaporation, and carbon nanotube production resulting from the catalyst-enhanced disproportionation of carbon monoxide, known as the Boudouard reaction: 2 CO(g)-->C(s) + CO2(g). The resulting detailed model contains 971 species and 1948 chemical reactions. A second model with a reduced reaction set containing 14 species and 22 chemical reactions is developed on the basis of the detailed model and reproduces the chemistry of the major species. Results showing the parametric dependence of temperature, total pressure, and initial precursor partial pressures are presented, with comparison between the two models. The reduced model is more amenable to coupled reacting flow-field simulations, presented in the following article.

Evaluation Studies↗

NASA NTRS2002

Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

Nanotechnology/instrumentation/methods↗

NASA NTRS2002

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Hwang, Helen H.↗

NASA NTRS2002

The Surface Interface Characteristics of Vertically Aligned Carbon Nanotube and Graphitic Carbon Fiber Arrays Grown by Thermal and Plasma Enhanced Chemical Vapor Deposition

The development of nano-arrays for sensors and devices requires the growth of arrays with the proper characteristics. One such application is the growth of vertically aligned carbon nanotubes (CNTs) and graphitic carbon fibers (GCFs) for the chemical attachment of probe molecules. The effectiveness of such an array is dependent not only upon the effectiveness of the probe and the interface between that probe and the array, but also the array and the underlaying substrate. If that array is a growth of vertically aligned CNTs or GCFs then the attachment of that array to the surface is of the utmost importance. This attachment provides the mechanical stability and durability of the array, as well as, the electrical properties of that array. If the detection is to be acquired through an electrical measurement, then the appropriate resistance between the array and the surface need to be fabricated into the device. I will present data on CNTs and GCFs grown from both thermal and plasma enhanced chemical vapor deposition. The focus will be on the characteristics of the metal film from which the CNTs and GCFs are grown and the changes that occur due to changes within the growth process.

Delzeit, Lance↗

NASA NTRS2002

Biomolecular Effects of Cold Plasma Exposure

The effects of cold plasma exposure on Deinococcus radiodurans, plasmid DNA and model proteins were assessed using microbiological, spectrometric and biochemical techniques. Exposure of D. radiodurans, an extremely radiation resistant microbe, to O2 plasma (less than or equal to 25 W, approx. 45 mTorr, 90 min) yielded a approx. 99.999 % sterilization and the sterilization rate was increased approx. 10-fold at 100 W and 500 mTorr. AFM images shows that the exposed cells are significantly deformed and possess 50-70 nm concavities. IR analysis indicates the chemical degradation of lipids, proteins and carotenoids of the cell wall and membrane. Intracellular damage was indicated by major absorbance loss at 1245, 1651 and 1538/cm corresponding to degradation of DNA and proteins, respectively. Biochemical experiments demonstrate that plasmas induce strand scissions and crosslinking of plasmid DNA, and reduction of enzyme activity; the degradation is power dependent with total sample loss occurring in 60 s at 200 W and 500 mTorr. Emission spectroscopy shows that D. radiodurans is volatilized into CO2, CO, N2 and H2O confirming the removal of biological matter from contaminated surfaces. The O2 plasma impacts several cellular components predominantly through chemical degradation by atomic oxygen. A CO2, plasma, however, was not effective at degrading D. radiodurans, revealing the importance of plasma composition, which has implications for planetary protection and the contamination of Mars.

Mogul, Rakesh↗

NASA NTRS2001

Plasma CVD of Carbon Nanotubes

Carbon nanotubes(CNT) exhibit remarkable mechanical and unique electronic properties and thus have created excitement in the research community about their potential in electronics, computing, sensor and structural applications. Realization of these applications critically depends on the ability to control the properties(such as diameter, chirality) as well purity. We have investigated CNT growth using an inductively coupled plasma(ICP) process using hydrocarbon feedstock. The catalyst required for nanotube growth consists of thin sputtered layers of aluminum and iron(10 nm each) and aligned carbon nanotubes have been obtained. Optical emission diagnostics as well as a plasma modeling effort have been undertaken to understand growth mechanisms. This presentation will discuss growth characteristics under various pressure, power and feedgas compositions and our understanding from modeling and diagnostics.

Delzeit, Lance↗

NASA NTRS2001

Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

Hwang, Helen H.↗

NASA NTRS2001

Impact of Gas Heating in Inductively Coupled Plasmas

Recently it has been recognized that the neutral gas in inductively coupled plasma reactors heats up significantly during processing. The resulting gas density variations across the reactor affect reaction rates, radical densities, plasma characteristics, and uniformity within the reactor. A self-consistent model that couples the plasma generation and transport to the gas flow and heating has been developed and used to study CF4 discharges. A Langmuir probe has been used to measure radial profiles of electron density and temperature. The model predictions agree well with the experimental results. As a result of these comparisons along with the poorer performance of the model without the gas-plasma coupling, the importance of gas heating in plasma processing has been verified.

Hash, D. B.↗

NASA NTRS2001

Study of a Martian aeolian sand analog with MECA microscopy

UNKNOWN

mars↗

NASA NTRS2001

A Novel Catalyst Deposition Technique for the Growth of Carbon Nanotubes

This viewgraph presentation provides information on the development of a technique at NASA's Ames Research Center by which carbon nanotubes (NT) can be grown. The project had several goals which included: 1) scaleability, 2) ability to control single wall nanotube (SWNT) and multiwall nanotube (MWNT) formation, 3) ability to control the density of nanotubes as they grow, 4) ability to apply standard masking techniques for NT patterning. Information regarding the growth technique includes its use of a catalyst deposition process. SWNTs of varying thicknesses can be grown by changing the catalyst composition. Demonstrations are given of various methods of masking including the use of transmission electron microscopic (TEM) grids.

Delzeit, Lance↗

NASA NTRS2001

Carbon Nanotube Tip Probes: Stability and Lateral Resolution in Scanning Probe Microscopy and Application to Surface Science to Semiconductors

In this paper we present results on the stability and lateral resolution capability of carbon nanotube (CNT) scanning probes as applied to atomic force microscopy (AFM). Surface topography images of ultra-thin films (2-5 nm thickness) obtained with AFM are used to illustrate the lateral resolution capability of single-walled carbon nanotube probes. Images of metal films prepared by ion beam sputtering exhibit grain sizes ranging from greater than 10 nm to as small as approximately 2 nm for gold and iridium respectively. In addition, imaging stability and lifetime of multi-walled carbon nanotube scanning probes are studied on a relatively hard surface of silicon nitride (Si3N4). AFM images Of Si3N4 surface collected after more than 15 hrs of continuous scanning show no detectable degradation in lateral resolution. These results indicate the general feasibility of CNT tips and scanning probe microscopy for examining nanometer-scale surface features of deposited metals as well as non-conductive thin films. AFM coupled with CNT tips offers a simple and nondestructive technique for probing a variety of surfaces, and has immense potential as a surface characterization tool in integrated circuit manufacturing.

Nguyen, Cattien V.↗

NASA NTRS2001

A Coupled Plasma and Sheath Model for High Density Reactors

We present a coupled plasma and collisionless; sheath model for the simulation of high density plasma processing reactors. Due to inefficiencies in numerical schemes and the resulting computational burden, a coupled multidimensional plasma and sheath simulation has not been possible model for gas mixtures and high density reactors of practical interest. In this work we demonstrate that with a fully implicit algorithm and a refined computational mesh, a self-consistent plasma and sheath simulation is feasible. We discuss the details of the model equations, the importance of ion inertia, and the resulting sheath profiles for argon and chlorine plasmas. We find that at low operating pressures (10-30 mTorr), the charge separation occurs only within a 0.5 mm layer near the surface in a 300 mm inductively coupled plasma etch reactor. A unified model eliminates the use of off-line or loosely coupled sheath models with simplifying assumptions which generally lead to uncertainties in ion flux and sheath electrical properties.

Deepak, Bose↗

NASA NTRS2001

Carbon Nanotubes by CVD and Applications

Carbon nanotube (CNT) exhibits extraordinary mechanical and unique electronic properties and offers significant potential for structural, sensor, and nanoelectronics applications. An overview of CNT, growth methods, properties and applications is provided. Single-wall, and multi-wall CNTs have been grown by chemical vapor deposition. Catalyst development and optimization has been accomplished using combinatorial optimization methods. CNT has also been grown from the tips of silicon cantilevers for use in atomic force microscopy.

Cassell, Alan↗

NASA NTRS2001

Study of a Martian Aeolian Sand Analog with MECA Microscopy

MECA microscopy (built for Mars '01) is simulated to show the potential of in situ microscopic analyses of surface materials on Mars. In particular, the value of nanotechnology is demonstrated. Additional information is contained in the original extended abstract.

Marshall, J.↗

NASA NTRS2001

A Semianalytical Ion Current Model for Radio Frequency Driven Collisionless Sheaths

We propose a semianalytical ion dynamics model for a collisionless radio frequency biased sheath. The model uses bulk plasma conditions and electrode boundary condition to predict ion impact energy distribution and electrical properties of the sheath. The proposed model accounts for ion inertia and ion current modulation at bias frequencies that are of the same order of magnitude as the ion plasma frequency. A relaxation equation for ion current oscillations is derived which is coupled with a damped potential equation in order to model ion inertia effects. We find that inclusion of ion current modulation in the sheath model shows marked improvements in the predictions of sheath electrical properties and ion energy distribution function.

Bose, Deepak↗

NASA NTRS2001

Nanotubes in Nanoelectronics: Transport, Growth and Modeling

Carbon nanotube (CNT) baud nanotechnology appears to be promising for future Theoretical analysis and results for the ballistic current carrying capacity of nanotube wires am presented. Aspects of metal-nanotube coupling are examined. Results am also presented for chemical vapor deposition of CNT from hydrocarbon feedstock.

Anantram, M.↗

NASA NTRS2001

Plasma Reactor Modeling and Validation Experiments

Plasma processing is a key processing stop in integrated circuit manufacturing. Low pressure, high density plum reactors are widely used for etching and deposition. Inductively coupled plasma (ICP) source has become popular recently in many processing applications. In order to accelerate equipment and process design, an understanding of the physics and chemistry, particularly, plasma power coupling, plasma and processing uniformity and mechanism is important. This understanding is facilitated by comprehensive modeling and simulation as well as plasma diagnostics to provide the necessary data for model validation which are addressed in this presentation. We have developed a complete code for simulating an ICP reactor and the model consists of transport of electrons, ions, and neutrals, Poisson's equation, and Maxwell's equation along with gas flow and energy equations. Results will be presented for chlorine and fluorocarbon plasmas and compared with data from Langmuir probe, mass spectrometry and FTIR.

Meyyappan, M.↗

NASA NTRS2001

Fourier Transform Infrared Spectroscopy of CF4 on the GEC Reference Cell

Fourier Transform Infrared Spectroscopy (FTIR) has been used to characterize inductively coupled CF4 plasmas in a GEC Reference Cell in-situ In examining these FTIR spectra, several assumptions and approximations of FTIR analysis are addressed. This includes the density dependence of cross-sections, non-linear effects in the addition of overlapping bands and the effect of spatial variations in density and temperature, This analysis demonstrates that temperatures extracted from MR spectra may provide a poor estimate of the true neutral plasma temperature. The FTIR spectra are dominated by unreacted CF, accounting for 40-60% of the gas products. The amount of CF4 consumption is found to have a marked dependence on power, and is nearly independent of pressure in the range of 10-50 mtorr. Small amounts of C2F6 are observed at low power. Also observed are etching products from the quartz window SiF4 COF2 and CO which occur in approximately equal ratios and together account for less than 10% of the gas. The concentrations of these species are nearly independent of pressure. CFx radicals are below the detection limit of this apparatus (approx. 1012/cc).

Rao, M. V. V. S.↗