Engineering topics

Meulenberg, A.

Publications and source records attributed to Meulenberg, A..

14 records

NASA NTRS1994

UV testing of INTELSAT-7, 7A, and 8 solar cells

A 4000 hour experiment, conducted in late 1992 through mid 1993, confirmed earlier results on the ultraviolet damage effects in covered solar cells of various types being used, or proposed for use, in INTELSAT programs. Two different UV test systems were used to identify systematic errors and to study the effects of UV source-bulb age on degradation rate. After correction for contamination and UV source-bulb aging, the extrapolated degradation rates for irradiated and unirradiated INTELSAT-5, -6 single AR(SAR) coated cells and INTELSAT-7, -7A, -8 double layer AR(DAR) coated cells in both the 1993 tests confirm the following hypotheses resulting from the 1992 experiment. (a) Irradiated cells display significantly more UV degradation than do the unirradiated cells for tests exceeding 2000 hours. The new data indicates that degradation effects from electron irradiation are proportional to t(exp 2) (the square of the UV hours), at least for times less than or equal to 3000 hours. (b) This difference does not depend upon entire reflective coating, cell resistivity, or manufacturer within the sensitivity and reproducibility of the experiment. (c) There is a clear difference in degradation rate between single AR coated cells (TiO(x)) and double layer AR coated cells (SiO(x) and Al2O3?). At 100,000 hours (11.4 years) the DAR coated cells display more degradation than do the SAR coated cells, even though at 1,000 hours the DAR cells display less degradation. (d) UV degradation rates, to modern covered silicon solar cells, at the beginning of bulb life drop from approximately 2 times the average rate to near zero after 2000 hours (average end-of-life for the xenon short-arc lamps used in the tests). The effects of 1 MeV electron irradiation (10(exp 15) e(-)/sq cm) prior to UV exposure are clearly indicated in the plot of percent change in cell open circuit voltage (Voc) versus percent change in short circuit current (Isc) during the UV test and post-test cleanup of the cells. Clearly, extended UV testing produces a permanent photo-induced redegradation of previously irradiated cells. However, this photo-induced redegradation may be caused by the long-wavelength light, not the UV light.

Meulenberg, A.↗

NASA NTRS1993

UV testing of solar cells: Effects of antireflective coating, prior irradiation, and UV source

Short-circuit current degradation of electron irradiated double-layer antireflective-coated cells after 3000 hours ultraviolet (UV) exposure exceeds 3 percent; extrapolation of the data to 10(exp 5) hours (11.4 yrs.) gives a degradation that exceeds 10 percent. Significant qualitative and quantitative differences in degradation were observed in cells with double- and single-layer antireflective coatings. The effects of UV-source age were observed and corrections were made to the data. An additional degradation mechanism was identified that occurs only in previously electron-irradiated solar cells since identical unirradiated cells degrade to only 6 +/- 3 percent when extrapolated 10(exp 5) hours of UV illumination.

Meulenberg, A.↗

NASA NTRS1993

Workshop summary: New silicon cells

The workshop on new silicon cells held during SPRAT12 is summarized. A smaller than average group attended this workshop reflecting the reduction in research dollars available to this portion of the photovoltaics community. Despite the maturity of the silicon technology, a core of the group maintained an excitement about new developments and potential opportunities. The group addressed both the implications and the applications of recent developments. Topics discussed include: light trapping and ultrathin silicon cells; different uses for silicon cells; new silicon cell developments; and radiation tolerant high efficiency cells.

Meulenberg, A.↗

NASA NTRS1991

Gallium Arsenide solar cell radiation damage experiment

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

Maurer, R. H.↗

NASA NTRS1991

Workshop summary: Space environmental effects

The workshop on Space Environmental Effects is summarized. The underlying concern of the group was related to the question of how well laboratory tests correlate with actual experience in space. The discussion ranged over topics pertaining to tests involving radiation, atomic oxygen, high voltage plasmas, contamination in low earth orbit, and new environmental effects that may have to be considered on arrays used for planetary surface power systems.

Meulenberg, A.↗

NASA NTRS1989

Gallium arsenide solar cell radiation damage study

A thorough analysis has been made of electron- and proton- damaged GaAs solar cells suitable for use in space. It is found that, although some electrical parametric data and spectral response data are quite similar, the type of damage due to the two types of radiation is different. An I-V analysis model shows that electrons damage the bulk of the cell and its currents relatively more, while protons damage the junction of the cell and its voltages more. It is suggested that multiple defects due to protons in a strong field region such as a p/n junction cause the greater degradation in cell voltage, whereas the individual point defects in the quasi-neutral minority-carrier-diffusion regions due to electrons cause the greater degradation in cell current and spectral response.

Maurer, R. H.↗

NASA NTRS1984

Structurally stable, thin silicon solar cells

A fabrication process for structurally stable thin solar cell wafers that produce good power output after irradiation is described. The fabrication process is as follows. A 6 mil, circular wafer is oxidized on both sides. One side is then patterned with a rectangular array of holes in the oxide that are nominally 75 mils square and separated by 2 mil spacings. Wells are then etched into the silicon with KOH to a depth of 4 mils, leaving a 2 mil, unetched thickness. Two areas on the surface are left unetched to provide pads for bonding or testing. All oxide is then removed and the rest of the processing is normal; the unetched face is used as the illuminated face. When all other processing is complete, a 2 X 2 cm cell is sawed from the starting wafer leaving a border that is approximately 10 mils wide. The effective thickness, determined by weighing an unmetallized sample, of such a cell is about 2.4 mil.

Arndt, R. A.↗

NASA NTRS1983

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗

NASA NTRS1982

Basis for equivalent fluence concept in space solar cells

The equivalent fluence concept is defined, and its use and potential problems are noted. Silicon and GaAs solar cells are compared in a radiation environment. The analysis indicates that valid equivalent fluence values may be easier to obtain in GaAs than in silicon.

Meulenberg, A.↗

NASA NTRS1982

Silicon research and technology

The development of solar cells suitable for space applications are discussed, along with the advantages and disadvantages of silicon and gallium arsenide solar cells. The goal of a silicon solar cell with 18% efficiency has not been reached and does not appear promising in the near future.

Meulenberg, A.↗

NASA NTRS1982

Surface effects in high voltage silicon solar cells

The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

Meulenberg, A.↗

NASA NTRS1981

Advances in high output voltage silicon solar cells

Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.

Arndt, R. A.↗

NASA NTRS1980

Conduction through punctures in metal-backed dielectrics

A theoretical mechanism to explain the main features of experiments with punctured spacecraft-thermal-blanket materials is presented. The model is based on consideration of the electric fields developed about punctures; the focusing of primary electrons toward the punctures; the generation, migration, and cascade of secondary electrons along the surface; and the radiation induced conductivity characteristics of thin dielectric films. Qualitative predictions of the model agree with experiment results

Meulenberg, A.↗

NASA NTRS1979

Limiting process in shallow junction solar cells

In extending the violet and nonreflective cell technology to lower resistivities, several processes limiting output power were encountered. The most important was the dark diffusion current due to recombination at the front grid contacts. After removal of this problem by reduction of the silicon metal contact area (to 0.14 percent of the total area), the electric field enhanced junction recombination current J sub r was the main limitation. Alteration of the diffusion profile to reduce the junction field is shown to be an effective means of influencing J sub r. The remaining problems are the bulk recombination in the n+ layer and the surface recombination at the oxide-silicon interface; both of these problems are aggravated by band-narrowing resulting from heavy doping in the diffused layer. Experimental evidence for the main limitations is shown, where increased diffusion temperature is seen to reduce both the influence of the front grid contacts and the junction electric field by increasing the junction depth. The potential for further significant improvement in efficiency appears to be high.

Meulenberg, A.↗