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Mesarwi, A.

Publications and source records attributed to Mesarwi, A..

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Robin, T.

Oxygen desorption from YBa2Cu3O(7-x) and Bi2CaSr2Cu2O(8 + delta) superconductors

Oxygen desorption experiments from YBa2Cu3O(7-x) (YBCO) and Bi2CaSr2Cu2O(8 + delta) (BSCCO) superconductors were carried out using a quadrupole mass spectrometer for monitoring the desorbing species and X-ray photoemission spectroscopy for surface characterization. Molecular oxygen was found to desorb from both superconductors following photoirradiation with ultraviolet/optical radiation and subsequent heating at over 150 C. Both YBCO and BSCCO were found to have similar oxygen desorption rates and similar activation energies. The desorption data as well as the X-ray photoemission data indicate that the oxygen desorption is not intrinsic to the superconductors but rather due to molecular oxygen entrapped in the material.

Mesarwi, A.

The effect of Sr and Bi on the Si(100) surface oxidation - Auger electron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy study

The effect of Sr and Bi on the oxidation of the Si(100) surface has been studied by Auger electron spectroscopy, low electron diffraction, and X-ray photoelectron spectroscopy. A dramatic enhancement, by a factor of 10, of the Si oxidation has been observed for Si(100) with a Sr overlayer. The SR-enhanced Si oxidation has been studied as a function of O2 exposure and Sr coverage. In contrast to the oxidation promotion of Sr on Si, it has been also observed that a Bi overlayer on Si(100) reduced Si oxidation significantly. Sr adsorption on the Si(100) with a Bi overlayer enhances Si oxidation only at Sr coverage of greater than 0.3 ML.

Fan, W. C.

Oxidation of the Si(100) surface promoted by Sr overlayer - An X-ray photoemission study

The interaction of strontium films with the underlaying Si (100) surface and the Sr-promoted low-temperature oxidation of Si were investigated, using XPS, at three different Sr coverages (theta): theta = 0.55 monolayer (ML), theta = 1 ML, and theta = 1.85 ML. Oxygen adsorption was studied both at room temperature and at 500 C, and at oxygen exposures up to 2 x 10 to the 6th L (1 L = 10 to the -6th torr) and 2 x 10 to the 5th L, respectively. The XPS spectra of the Si2p, O1s, and Sr3d core levels were measured for the atomically clean Si, the Sr-covered Si, and for the Sr-covered Si after each oxygen exposure. Results indicate that Sr interacts with the Si(100) surface forming a strong ionic bond, and that Sr promotes the oxidation of the Si (100) surface.

Mesarwi, A.

Photodesorption from stainless steels

The photodesorption by low-energy photons from three types of stainless steels is examined. For all these systems both CO and CO2 were observed to photodesorb with high yields: about 0.001 molecules/photon for CO2 and about 0.0001 molecules/photon for CO at 250 nm. The observed threshold energies were found to be the same for all systems at E0 = 2.92 eV for CO2 and E0 = 2.92-3.10 eV for CO.

Mesarwi, A.