Engineering topics

Meredith, Roger D.

Publications and source records attributed to Meredith, Roger D..

At least 19 records

NASA NTRS2018

In-Line Electromagnetic Actuator for Fuel Modulation

An in-line electromagnetic actuator with normally-open configuration has been developed for the purpose of exploring its application as a fuel modulator for the active control of combustor thermo-acoustic instabilities. The actuator is based on the spring-coil-plunger mechanism with the plunger designed to be suspended by crossed cantilever beam springs. Operational specification was set for a 1000 psi maximum inlet fuel pressure and modulation for a broad frequency bandwidth that encompasses frequencies that are typically associated with combustor thermo-acoustic instabilities. Various test results demonstrated fuel modulation up to 1200 Hz for coil excitation voltage between 2.3 and 4.6 V and current between 16 and 48 mA, respectively. The initial goal of this work was to demonstrate fuel modulation based on the concept of a normally-open fuel modulator with tethered plunger displacement.

Actuator↗

NASA NTRS2018

In-Line Electromagnetic Actuator for Fuel Modulation

Okojie, Robert S.↗

NASA NTRS2018

Sixty Earth-Days Test of a Prototype Pt/HTCC Alumina Package in Simulated Venus Environment

This paper presents experimental results of a prototype high temperature co-fired ceramic (HTCC) package with Au/Pt metallization in a three-phase harsh environment test that culminated with 60-day demonstration in simulated Venus surface environment of 465 degrees Centigrade with corrosive atmosphere at 90 bars pressure. The prototype package is based on a previously developed and reported HTCC package successfully tested with multiple analog and digital silicon carbide (SiC) high temperatures semiconductor integrated circuits (ICs) at NASA Glenn Research Center in 500 degrees Centigrade Earth air ambient for over ten thousand hours, and short-term tested at temperatures above 800 degrees Centigrade. The three-phase harsh environment test started with 48 hours in 465 degrees Centigrade Earth air, followed by 48 hours in 465 degrees Centigrade nitrogen at 90-bar pressure and 1400 hours in simulated Venus surface environment of 465 degrees Centigrade with corrosive atmosphere at 90 bars. Initial analytical results of the package materials and surfaces after exposure to the Venus environment are discussed to assess the stability of the packaging materials in the tested environments. The test in a simulated Venus environment was implemented in the NASA Glenn Extreme Environment Rig (GEER). The results of this study suggest that an effective encapsulation of areas of surface metallization and vicinities may help to improve electrical performance of a HTCC alumina packaging system in Venus environment.

Chen, Liang-Yu↗

NASA NTRS2018

Sixty Earth-Days Test of a Prototype Pt/HTCC Alumina Package in Simulated Venus Environment

This paper presents experimental results of a prototype high temperature co-fired ceramic (HTCC) package with Au/Pt metallization in a three-phase harsh environment test that culminated with 60-day demonstration in simulated Venus surface environment of 465 degC with corrosive atmosphere at 90 bar pressure. The prototype package is based on previously developed and reported HTCC package successfully tested with multiple analog and digital silicon carbide (SiC) high temperatures semiconductor integrated circuits (ICs) at NASA Glenn Research Center in 500 degC Earth air ambient for over ten thousands hours, and short-term tested at temperatures above 800 degC. The three-phase harsh environment test started with 48 hours in 465 degC Earth air, followed by 48 hours in 465 degC nitrogen at 90 bar pressure and 1400 hours in simulated Venus surface environment of 465 degC with corrosive atmosphere at 90 bar. Initial analytical results of the package materials and surfaces after exposure to Venus environment are discussed to assess the stability of the packaging materials in the tested environments. The test in simulated Venus environment was implemented in the NASA Glenn Extreme Environment Rig (GEER). The results of this study suggest that an effective encapsulation of areas of surface metallization and vicinities may help to improve electrical performance of a HTCC alumina packaging system in Venus environment.

Chen, Liangyu↗

NASA NTRS2017

Packaging Technology for SiC High Temperature Electronics

High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

Chen, Liang-Yu↗

NASA NTRS2016

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

In this paper, the development and characterization of a packaged pressure sensor system suitable for jet engine health monitoring is demonstrated. The sensing system operates from 97 to 117 MHz over a pressure range from 0 to 350 psi and a temperature range from 25 to 500 deg. The sensing system consists of a Clapp-type oscillator that is fabricated on an alumina substrate and is comprised of a Cree SiC MESFET, MIM capacitors, a wire-wound inductor, chip resistors and a SiCN capacitive pressure sensor. The pressure sensor is located in the LC tank circuit of the oscillator so that a change in pressure causes a change in capacitance, thus changing the resonant frequency of the sensing system. The chip resistors, wire-wound inductors and MIM capacitors have all been characterized at temperature and operational frequency, and perform with less than 5% variance in electrical performance. The measured capacitive pressure sensing system agrees very well with simulated results. The packaged pressure sensing system is specifically designed to measure the pressure on a jet turbofan engine. The packaged system can be installed by way of borescope plug adaptor fitted to a borescope port exposed to the gas path of a turbofan engine.

Harsh environment↗

NASA NTRS2015

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

dielectric properties↗

NASA NTRS2014

Design and Operation of a Fast, Thin-Film Thermocouple Probe on a Turbine Engine

No abstract available

thermocouples↗

NASA NTRS2014

Design and Operation of a Fast, Thin-Film Thermocouple Probe on a Turbine Engine

As a demonstration of technology maturation, a thin-film temperature sensor probe was fabricated and installed on a F117 turbofan engine via a borescope access port to monitor the temperature experienced in the bleed air passage of the compressor area during an engine checkout test run. To withstand the harsh conditions experienced in this environment, the sensor probe was built from high temperature materials. The thin-film thermocouple sensing elements were deposited by physical vapor deposition using pure metal elements, thus avoiding the inconsistencies of sputter-depositing particular percentages of materials to form standardized alloys commonly found in thermocouples. The sensor probe and assembly were subjected to a strict protocol of multi-axis vibrational testing as well as elevated temperature pressure testing to be qualified for this application. The thin-film thermocouple probe demonstrated a faster response than a traditional embedded thermocouple during the engine checkout run.

thermocouples↗

NASA NTRS2014

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

Pressure Sensors↗

NASA NTRS2014

Wireless Seismometer for Venus

Measuring the seismic activity of Venus is critical to understanding its composition and interior dynamics. Because Venus has an average surface temperature of 462 C and the challenge of providing cooling to multiple seismometers, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents progress towards a seismometer sensor with wireless capabilities for Venus applications. A variation in inductance of a coil caused by a 1 cm movement of a ferrite probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 80 MHz in the transmitted signal from the oscillator sensor system at 420 C, which correlates to a 10 kHz mm sensitivity when the ferrite probe is located at the optimum location in the coil.

seismometer↗

NASA NTRS2014

Wireless Capacitive Pressure Sensor Operating up to 400 Celcius from 0 to 100 psi Utilizing Power Scavenging

In this paper, a wireless capacitive pressure sensor developed for the health monitoring of aircraft engines has been demonstrated. The sensing system is composed of a Clapp-type oscillator that operates at 131 MHz. The Clapp oscillator is fabricated on a alumina substrate and consists of a Cree SiC (silicon carbide) MESFET (Metal Semiconductor Field Effect Transistors), this film inductor, Compex chip capacitors and Sporian Microsystem capacitive pressure sensor. The resonant tank circuit within the oscillator is made up of the pressure sensor and a spiral thin film inductor, which is used to magnetically couple the wireless pressure sensor signal to a coil antenna placed over 1 meter away. 75% of the power used to bias the sensing system is generated from thermoelectric power modules. The wireless pressure sensor is operational at room temperature through 400 C from 0 to 100 psi and exhibits a frequency shift of over 600 kHz.

Scardelletti, Maximilian C.↗

NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Chen, Liang-Yu↗

NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Electronic packaging↗

NASA NTRS2012

High Temperature, Wireless Seismometer Sensor for Venus

Space agency mission plans state the need to measure the seismic activity on Venus. Because of the high temperature on Venus (462? C average surface temperature) and the difficulty in placing and wiring multiple sensors using robots, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents the description and proof of concept measurements of a high temperature, wireless seismometer sensor for Venus. A variation in inductance of a coil caused by the movement of an aluminum probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 700 Hz in the transmitted signal from the oscillator/sensor system at 426? C. This result indicates that the concept may be used on Venus.

Ponchak, George E.↗

NASA NTRS2011

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Meredith, Roger D.↗

NASA NTRS2008

Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry

This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 degC with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 C before failure.

Neudeck, Philip G.↗

NASA NTRS2008

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications.

Neudeck, Philip G.↗