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Meng, Yifei

Publications and source records attributed to Meng, Yifei.

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Extended Electronic Structure Inhomogeneity Created by Double Chain Layer Defects Surrounding Columnar Tracks in Heavy-Ion Irradiated YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}.

In YBa2Cu3O7-delta (YBCO), heavy-ion irradiation creates continuous amorphous tracks that are highly effective for vortex pinning. However, the electronic structure landscape of defects and consequently their vortex pinning roles are unclear. Here, we show double chain layer (DCL) defects which intersect the columnar tracks are additionally produced by high energy Pb ion irradiation in YBCO. The DCL defects are similar to 29 nm long, about three times the columnar defect diameter. The electronic structures of the DCL and columnar track defects were determined using atomic-resolution scanning transmission electron microscopy (STEM) and high resolution electron energy loss spectroscopy (EELS). Results show a decrease in the oxygen and copper content at the interface between the track and the YBCO matrix, resulting in interfacial strain. For the DCL defects, the STEM/EELS study revealed a localized electron doped CuO2 plane next to the DCL defect. The DCL defects thus further extend the electronic inhomogeneity into YBCO.

critical current↗
DOE OSTI2018

Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Extremely hard amorphous-crystalline hybrid steel surface produced by deformation induced cementite amorphization

Amorphous and nanograined (NG) steels are two categories of strong steels. However, over the past decade, their application has been hindered by their limited plasticity, the addition of expensive alloying elements, and processing challenges associated with producing bulk materials. Here in this work, we report that the surface of a carburized Fe-Mn-Si martensitic steel with extremely low elemental alloying additions can be economically fabricated into an amorphous-nanocrystalline hybrid structure. Atom probe tomography and nanobeam diffraction of a hard turned steel surface together with molecular dynamics (MD) simulations reveal that the original cementite surface structure experiences a size-dependent amorphization and phase transformation during heavy plastic deformation. MD simulations further show that the martensite-cementite interface serves as a nucleation site for cementite amorphization, and that cementite can become disordered if further strained when the cementite particles are relatively small. These graded structures exhibit a surface hardness of ~16.2 GPa, which exceeds the value of ~8.8 GPa for the original nanocrystalline martensitic steel and most nanocrystalline steels reported before. Finally, this practical and cost-efficient approach for producing a hard surface with retained bulk ductility and toughness can provide expanded opportunities for producing an amorphous-crystalline hybrid structure in steels and other alloy systems.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗