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Meng, Sheng

Publications and source records attributed to Meng, Sheng.

Coexistence of Interacting Charge Density Waves in a Layered Semiconductor

Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe 4 , a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect FS nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that mono- and bi-layers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Finally, our findings not only offer microscopic insights into the correlated ground state of EuTe 4 but also provide a general non-equilibrium approach to understand coexisting, layer-dependent orders in a complex system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Super-resolved time–frequency measurements of coupled phonon dynamics in a 2D quantum material

Abstract Methods to probe and understand the dynamic response of materials following impulsive excitation are important for many fields, from materials and energy sciences to chemical and neuroscience. To design more efficient nano, energy, and quantum devices, new methods are needed to uncover the dominant excitations and reaction pathways. In this work, we implement a newly-developed superlet transform—a super-resolution time-frequency analytical method—to analyze and extract phonon dynamics in a laser-excited two-dimensional (2D) quantum material. This quasi-2D system, 1 T -TaSe 2 , supports both equilibrium and metastable light-induced charge density wave (CDW) phases mediated by strongly coupled phonons. We compare the effectiveness of the superlet transform to standard time-frequency techniques. We find that the superlet transform is superior in both time and frequency resolution, and use it to observe and validate novel physics. In particular, we show fluence-dependent changes in the coupled dynamics of three phonon modes that are similar in frequency, including the CDW amplitude mode, that clearly demonstrate a change in the dominant charge-phonon couplings. More interestingly, the frequencies of the three phonon modes, including the strongly-coupled CDW amplitude mode, remain time- and fluence-independent, which is unusual compared to previously investigated materials. Our study opens a new avenue for capturing the coherent evolution and couplings of strongly-coupled materials and quantum systems.

36 MATERIALS SCIENCE↗

Persona of Transition Metal Ions in Solids: A Statistical Learning on Local Structures of Transition Metal Oxides

Abstract The local structure of a transition metal (TM) ion is a function of cation elements and valence states. More than that, in this work, by employing a trove of first‐principles data of TM oxides, the local structures of TM cations are statistically analyzed to extract detailed information about cation site preference, bond length, site structural distortion, and cation magnetization. It is found that cation radius alone poorly describes the local structure of a transition metal oxide, while the statistics of coordination number as well as the TMO bond length distribution, especially that of the 3d TMs, can provide comprehensive knowledge for understanding the behavior of TM elements. Based on these statistics, the interplay of site distortion due to the Jahn–Teller effect, cation site similarity, and a new set of ionic radii are all obtained to chart the “persona” of transition metal ions in solids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-temperature fractional quantum Hall state in the Floquet kagome flat band

A fractional quantum Hall effect (FQHE) has been predicted in a topological flat band (FB) by a single-particle band structure combined with phenomenological theory or solution of a many-body lattice Hamiltonian with fuzzy parameters. A long-standing roadblock toward the realization of a FB-FQHE is lacking the many-body solution of specific materials under realistic conditions. Here, we demonstrate a combined study of single-particle Floquet band theory with exact diagonalization (ED) of a many-body Hamiltonian. We show that a time-periodic circularly polarized laser inverts the sign of second-nearest-neighbor hopping in a kagome lattice and enhances spin-orbit coupling in one spin channel to produce a Floquet FB with a high flatness ratio of bandwidth over band gap, as exemplified in monolayer Pt 3 C 36 S 12 H 12 . The ED of the resultant Floquet-kagome lattice Hamiltonian gives a one-third-filling ground state with a laser-dependent excitation gap of a FQH state, up to an estimated temperature above 70 K. Our findings pave the way for exploring the alluding high-temperature FB-FQHE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Orbital design of flat bands in non-line-graph lattices via line-graph wave functions

Line-graph (LG) lattices are known for having flat bands (FBs) from the destructive interference of Bloch wave functions encoded in only lattice symmetry. In this work, we develop a generic atomic/molecular orbital design principle for FBs in non-LG lattices. Based on linear combination of atomic orbital theory, we demonstrate that the underlying wave-function symmetry of FBs in a LG lattice can be transformed into the atomic/molecular orbital symmetry in a non-LG lattice. We illustrate such orbital-designed topological FBs in three 2D non-LG, square, trigonal, and hexagonal lattices, where the designed orbitals faithfully reproduce the corresponding lattice symmetries of checkerboard, kagome, and diatomic-kagome lattices, respectively. Interestingly, systematic design of FBs with a high Chern number is also achieved based on the same principle. Fundamentally our theory enriches the FB physics; practically, it significantly expands the scope of FB materials, since most materials have multiple atomic/molecular orbitals at each lattice site, rather than a single s orbital mandated in graph theory and generic lattice models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Non-Hermitian topological states in 2D line-graph lattices: evolving triple exceptional points on reciprocal line graphs

Non-Hermitian (NH) topological states, such as the doubly-degenerate nodes dubbed as exceptional points (EPs) in Bloch band structure of 2D lattices driven by gain and loss, have attracted much recent interest. We demonstrate theoretically that in the three-site edge-centered lattices, i.e. the so-called line-graph lattices, such as kagome lattice which is a line graph of hexagonal lattice, there exist three types of triply-degenerate EPs evolving intriguingly on another set of line graphs in the reciprocal space. A single TEP (STEP) with ±1/3 topological charge moves faithfully along the edges of reciprocal line graphs with varying gain and loss, while two STEPs merge distinctively into one unconventional orthogonal double TEP (DTEP) with ±2/3 charge at the vertices, which is characterized with two ordinary self-orthogonal eigenfunctions but one surprising 'orthogonal' eigenfunction. Differently, in a modified line-graph lattice with an off-edge-center site, the ordinary coalesced state of DTEPs emerges with three identical self-orthogonal eigenfunctions. Such NH states and their evolution can be generally realized in various artificial systems, such as photonic and sonic crystals, where light and sonic vortex beams with different fractional twisting can be found. Our findings shed new light on fundamental understanding of gapless topological states in NH systems in terms of creation and evolution of high-order EPs, and open up new research directions to further link line graph and flow network theory coupled with topological physics, especially under non-equilibrium gain/loss conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a “Si-H···H-O” complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H···H-O complex will be the center for defect creation and device degradation. Finally, we also explain why such a center might be relatively easy to form during the hydrogen annealing process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Screening two-dimensional materials with topological flat bands

The topological flat band (TFB) has been proposed theoretically in various lattice models, to exhibit a rich spectrum of intriguing physical behaviors. However, the experimental demonstration of flat band (FB) properties has been severely hindered by the lack of materials realization. In this study, by screening materials from a first-principles materials database, we identify a group of two-dimensional materials with TFBs near the Fermi level, covering some simple line-graph and generalized line-graph FB lattice models. These include the kagome sublattice of O in Ti O 2 yielding a spin-unpolarized TFB, and that of V in ferromagnetic V 3 F 8 yielding a spin-polarized TFB. The monolayer Nb 3 Te Cl 7 and its counterparts from element substitution are found to be breathing-kagome-lattice crystals. The family of monolayer II I 2 V I 3 compounds exhibit a TFB representing the coloring-triangle lattice model. Re F 3 , Mn F 3 , and Mn Br 3 are all predicted to be diatomic-kagome-lattice crystals, with TFB transitions induced by atomic substitution. Finally, Hg F 2 , Cd F 2 , and Zn F 2 are discovered to host dual TFBs in the diamond-octagon lattice. Our findings pave the way to further experimental exploration of eluding FB materials and properties.

36 MATERIALS SCIENCE↗