Engineering topics
Publications and source records attributed to Meier, D. L..
We present high-resolution VLBI radio images of the closest classical radio galaxy, Centaurus A, including the highest resolution image yet for this source.
We present VLBI and Australia Telescope Compact Array images, and derive source frame radio-core brightness temperatures for three prominent, flat-spectrum extragalactic radio sources, notable because they have not been detected as gamma-ray sources with the EGRET instrument.
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We present high-resolution very long baseline interferometry images of three southern radio sources that the Energetic Gamma-Ray Experiment Telescope (EGRET), on board the Compton Gamma Ray Observatory, has identified as greater than 100 MeV gamma-ray sources.
High frequency (22 GHz) data have been used two resolve two compact components of the strong gravitational lens PKS 1830-211. The two bright components are at opposite sides of a one arcsecond diameter Einstein ring.
GRO J1655-40 was discovered as a new, bright X-ray source with the BATSE detector of the Gamma Ray Observatory (GRO) on July 27, 1994. During the subsequent radio outburst we completed VLBI synthesis imaging observations at a frequency of 2.29 GHz. An unprecedented angular motion of 65+/- mas per day was reported between two components of complex and disparate morphology ?? The separation rate indicates that the two components were at zero separation near the onset of the radio flare. Similar to the recently reported GRS 1915+105, it seems that the motion of material ejected from a stellar mass compact object with at least a mildly relativistic velocity may explain the observed radio structural changes in GRO J1655-40. The two-week delay between the X-ray outburst and the production of radio components may indicate that the X-rays were produced by a super-critical accretion process onto the compact member of this stellar binary system. This process inhibited or smothered the ejection of radio components until the accretion disk stabilized.
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The bright, peculiar elliptical galaxy Centaurus A (NGC 5128, PKS 1322-427) was one of the first extragalactic radio sources to be optically identified (Bolton et al. 1949). At a distance of 4 Mpc, Centaurus A is the closest active radio galaxy and affords the highest linear imaging resolution (1 mas approximately equal to 0.02 pc) and hence the best prospects for studying an active nucleus close to the central radio source. We present the results of multi-epoch, 8.4-GHz, very long baseline interferometry (VLBI), imaging observations of the nucleus made over the past three years. The nucleus possesses a core-jet structure where the inner portion of the jet shows apparent linear motion with a velocity substantially less than the speed of light.
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Radio telescopes at eight sites in Astralia and one in South Africa operate as a VLBI array during several periods each year.
High-resolution radio images of PKS1830 - 211 are obtained to study the possibility that the double structure is a gravitationally lensed object. The VLBI observations, taken from interferometric radiotelescope networks, reveal an elliptical ring that connects two bright spots of similar composition. Because the lens and the lensed object are closely aligned, and because of the structure of the two spots, the source is concluded to be a radio Einstein ring. The source is found to be close to the galactic plane, and the lens and the lensed object are extragalactic. The source is also found to be unusually bright, suggesting that it is aligned with a bright background source or amplified by some mechanism related to a source that is not so bright.
A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.
Six radio telescopes were operated as the first southern hemisphere VLBI array in April and May 1982. Observations were made at 2.3 and 8.4 Ghz. This array produced VLBI images of 28 southern hemisphere radio sources, high accuracy VLBI geodesy between southern hemisphere sites, and sub-arcsecond radio astrometry of celestial sources south of declination -45 degrees. This paper discusses only the astrophysical aspects of the experiment.
The VSOP Space VLBI mission uses the HALCA spacecraft, launched from Japan in February 1997, in conjunction with ground radio observatories around the world to create a high resolution radio-wave length imaging facility. We are using this unique facility to observe a complete sample of Pearson-Readhead Survey sources at 4.8 GHz to determine core brightness temperatures and pc-scale jet properties. The Pearson-Readhead sample has been used for extensive ground-based VLBI survey studies. This sample is ideal for a VSOP survey because the sources are strong, the VSOP u-v coverages are especially good above +350 declination, and multi-epoch ground-based VLBI data and other existing supporting data on these sources exceeds that of any other possible sample. We have chosen to observe a complete subset of this sample that is most likely to show fringes on space-earth baselines. To date we have imaged a majority of the 31 sources in our sample. In addition, we are obtaining matched- resolution 15 GHz observations using the VLBA at epochs close in time to the space VLBI observations to investigate the spectral indices of the source components at high resolution. We gratefully acknowledge the VSOP Project, which is led by the Japanese Institute of Space and Astronautical Science in cooperation with many organizations and radio telescopes around the world. This research was performed in part at the Jet Propulsion Laboratory, California Institute of Technology, under contract to NASA.
The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.
The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.
Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.
Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.