Engineering topics

Mattauch, Robert J.

Publications and source records attributed to Mattauch, Robert J..

6 records

NASA NTRS1992

Nb/Al-Al2O3/Nb junctions with inductive tuning elements for a very low noise 205-250 GHz heterodyne receiver

The superconductor-insulator-superconductor (SIS) junction is the most sensitive nonlinear element for millimeter-wave heterodyne detection. An Nb/Al-Al203/Nb junction fabrication process has been developed which allows the use of planar tuning circuits integrated with the junctions. These tuning elements permit the use of junctions with relatively large areas and small current densities with excellent results. Recent measurements have yielded a double sideband receiver noise temperature less than 50 K from 205 to 240 GHz and 44 K at 230 GHz. This Nb/Al-Al203/Nb trilayer technology is also being extended to the fabrication of sub-square-micron area planar junctions for submillimeter-wavelengths.

Lichtenberger, Arthur W.↗

NASA NTRS1992

Planar GaAs diodes for THz frequency mixing applications

Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

Bishop, William L.↗

NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗

NASA NTRS1991

Whiskerless Schottky diode

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Bishop, William L.↗

NASA NTRS1988

Schottky Diode With Surface Channel

Straighforward design changes improve performance and simplify fabrication. Anode contact finger forms bridge over channel material removed to reduce parasitic shunt capacitance. Device made by standard processing techniques readily accommodating changes of design.

Bishop, William↗

NASA NTRS1985

Optimization of SIS mixer elements

Superconductor-Insulator-Superconductor (SIS) quantum mixers provide an approach to millimeter wave mixing - potentially offering conversion gain, a low local oscillator power demand, and potential mixer noise temperatures near the quantum limit. The development of a reliable fabrication technology for producing such high quality SIS devices for mixer applications in radio astronomy is the focus of the work.

Mattauch, Robert J.↗