Engineering topics
Publications and source records attributed to Mattauch, R. J..
The Josephson junction shows great promise as a millimeter wave mixer element. This paper discusses the physical mixing process from a first-order mathematical approach. Design and fabrication of such structures tailored for use in a 80-120 GHz mixer application is presented. Testing of the structures and a discussion of their interpretation is presented.
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Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.
High-energy electrons (approximately 7 MeV) were used to radiation-dope extrinsic silicon. Both n- and p-type silicon photodetectors were fabricated using this doping technique. The 500 K blackbody responsivity, spectral response, and peak detectivity were determined for these devices. The peak detectivity values measured were 4.8 Gm Hz to the 1/2 power per W at 2.15 microns for 0.1-ohm-cm n-type devices and 3.7 Gm Hz to the 1/2 power per W at 40 microns for 10-ohm-cm p-type detectors. A comparison of the thermally generated background majority carrier concentration for radiation-doped and conventional impurity-doped detectors is made.
A linear voltage-tunable null device was predicted, fabricated, and tested. This filter is conceptually a distributed parameter RC representation of the channel of a MOSFET in a network configuration with a second MOSFET that is treated as a variable resistor. Classical transmission-line theory is used to predict a linear tuning curve with applied bias for the device. This concept was used to design a null device having a null that is linearly tunable in the range of 100 kHz. Such devices were fabricated and tested. Typical MOS processing steps were used and the resulting structures are compatible with the planar technology. The compatibility leads towards extension of this work to different frequency ranges for other specific applications.
Device with step function variation of the capacitance is useful for voltage-controlled oscillator circuits and as a voltage-sensitive switch. Simplicity of construction makes the device suitable for large-scale integration, microelectronic circuits.
High impedance source with shunt capacitance, discussing periodic output measurement using operational amplifier
Spectral results of p- and n-type silicon and germanium
Photoconductor open circuit voltage determination, calculating responsivity and sensitivity of actual and ideal cases
Black body responsivity data of n-type and p-type silicon
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Cobalt 60 gamma radiation effect on MOS diodes fabricated on silicon substrates, noting surface state and oxide charge densities
Cobalt 60 gamma radiation effects on Metal Oxide Semiconductors /MOS/ with p-type and n-type silicon substrates
Surface state density variations on metal oxide semiconductor capacitors due to gamma radiation
Derivation of mathematical functions for calculating changes in semiconductor surfaces due to applied surface charge