Matloubian, Mehran | Engineering Papers

NASA NTRS1995

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

TRT-EXPERIMENTAL↗

NASA NTRS1995

MEMS-Based Communications Systems for Space-Based Applications

As user demand for higher capacity and flexibility in communications satellites increases, new ways to cope with the inherent limitations posed by the prohibitive mass and power consumption, needed to satisfy those requirements, are under investigation. Recent studies suggest that while new satellite architectures are necessary to enable multi-user, multi-data rate, multi-location satellite links, these new architectures will inevitably increase power consumption, and in turn, spacecraft mass, to such an extent that their successful implementation will demand novel lightweight/low power hardware approaches. In this paper, following a brief introduction to the fundamentals of communications satellites, we address the impact of micro-electro-mechanical systems (MEMS) technology, in particular micro-electro-mechanical (MEM) switches to mitigate the above mentioned problems and show that low-loss/wide bandwidth MEM switches will go a long way towards enabling higher capacity and flexibility space-based communications systems.

DeLosSantos, Hector J.↗