Engineering topics
Publications and source records attributed to Massengill, Lloyd.
The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.
A comparison of transients from heavy-ion and pulsed-laser testing shows good agreement for many different voltage configurations. The agreement is illustrated by comparing directly individual transients and plots of transient amplitude versus width.
The SEU rate in a flash ADC (AD9058) on board a space experiment varied by more than an order of magnitude, depending on the input. A pulsed laser aided in elucidating the reasons, which were found to be the result of the unique design of the AD9058.
The SEU rate in a flash ADC (AD9058) on board a space experiment varied by more than an order of magnitude, depending on the input. A pulsed laser aided in elucidating the reasons, which were found to be the result of the unique design of the AD9058.
Because of the extended time that the Long Duration Exposure Facility (LDEF) mission stayed in space, the solar cells on the satellite experienced greater environments than originally planned. The cells showed an overall degradation in performance that is due to the combined effects of the various space environments. The purpose of this analysis is to calculate the effect of the accumulated radiation on the solar cells, thereby helping Marshall Space Flight Center (MSFC) to unravel the relative power degradation from the different environments.