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Marshall, Paul

Publications and source records attributed to Marshall, Paul.

11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Rate constants and third-body collision efficiencies for recombination of Na with OH and O2: Implications for flame inhibition by alkali salts

Flame inhibition by alkali metals has implications for solid fuel combustion, fire safety, and a number of industrial processes. While the mechanism of inhibition is fairly well understood, details related to thermodynamic properties and rate constants are still in question. In the present work, the recombination of Na with OH (R5) and O2 (R7), respectively, was characterized theoretically, and the implications for modeling laminar premixed hydrogen flames doped with sodium species were examined. Third-body collision efficiencies and low-pressure-limit rate constants were obtained using newly fitted ab initio-based potential energy surfaces, classical trajectories, and one-dimensional master equation calculations. The results are consistent with available experimental results and aid in the present modeling study by providing rate information for bath gases and conditions that remain unexplored experimentally. Chemical kinetic modeling of relative Na and absolute H and OH profiles in H2-fueled laminar, premixed flames doped with a sodium salt shows that the most important radical removal cycle is the sequence Na + OH (+M) → NaOH (+M) (R5), NaOH + H → Na + H2O (R12), even under oxidizing conditions. A secondary cycle, Na + O2 (+M) ⇄ NaO2 (+M) (R7), NaO2 + OH → NaOH + O2 (R14), is less important due to the low thermal stability of NaO2. In most flames, reaction R7 is partially equilibrated, and reaction R14 becomes rate-limiting for the second cycle. The flame analysis supports a lower value of k14 than indicated by recent work on KO2 + OH, but more work is required to confirm this.

Jasper, Ahren W.↗
NASA NTRS2005

Single Particle Damage Events in Candidate Star Camera Sensors

This viewgraph presentation presents information on the following topics: 1) Solar and trapped protons and shielding; 2) Proton interactions in Si; 3) Displacement damage effects in detectors; 4) Hot pixel mechanisms, introduction rates, and annealing.

Marshall, Paul↗
NASA NTRS2005

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗
NASA NTRS2004

Comparison of the Proton-Induced Dark Current and Charge Transfer Efficiency Responses of N- and P-Channel CCDs

The proton-induced CTE behavior for the Lawrence Berkeley National Laboratory (LBNL) p-CCD (being developed for the Supernovae Acceleration Project (SNAP) and Hubble Space Telescope (HST) Wide Field Camera 3 (WFC3) n-CCDs were compared using 55Fe, EPER and FPR techniques. CTE performance of the p-CCD is about an order of magnitude better after a 63 MeV fluence of 2.5 x 10(sup 9)/sq cm, which is equivalent to 2.5 years in the shielded HST orbit. Notched n- and p-CCDs yielded factor of two improvement in CTE performance as compared to their un-notched versions. The introduction rate of hot pixels was greater in p-CCD as compared to n-CCD, and also greater in notched than un-notched devices.

Marshall, Cheryl↗
NASA NTRS2004

Monte Carlo Techniques for Calculations of Charge Deposition and Displacement Damage from Protons in Visible and Infrared Sensor Arrays

This slide presentation examines motivation for Monte Carlo methods, charge deposition in sensor arrays, displacement damage calculations, and future work. The discussion of charge deposition sensor arrays includes Si active pixel sensor APS arrays and LWIR HgCdTe FPAs. The discussion of displacement damage calculations includes nonionizing energy loss (NIEL), HgCdTe NIEL calculation results including variance, and implications for damage in HgCdTe detector arrays.

Marshall, Paul↗
NASA NTRS2003

Proton-Induced Transients and Charge Collection Mechanisms in a LWlR HgCdTe Focal Plane Array

Low noise performance of IR detectors is required, even in the presence of charged particles. Galactic cosmic rays, trapped protons & solar energetic particles. Particle induced transients identified as an important source of noise on ESA's ISO satellite. Also observed on NICMOS Instrument on NASA% Hubble Space Telescope. Tools to analyse particle induced transients have been developed. To date, comparisons of model have been made to flight data for a HgCdTe array exposed to trapped protons, and to a Si array exposed to laboratory protons. We report ground based proton transient measurements in a modem LWlR HgCdTe array operating under cryogenic conditions. Demonstration of charge collection mechanisms. Provide benchmarks for modeling tools.

Marshall, Paul↗
NASA NTRS1998

Preliminary Flight Results of the Microelectronics and Photonics Test Bed: NASA DR1773 Fiber Optic Data Bus Experiment

NASA Goddard Spare Flight Center's (GSFC) Dual Rate 1773 (DR1773) Experiment on the Microelectronic and Photonic Test Bed (MPTB) has provided valuable information on the performance of the AS 1773 fiber optic data bus in the space radiation environment. Correlation of preliminary experiment data to ground based radiation test results show the AS 1773 bus is employable in future spacecraft applications requiring radiation tolerant communication links.

Jackson, George L.↗
NASA NTRS1993

Single event test methodology for integrated optoelectronics

A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.

Label, Kenneth A.↗