Engineering topics

Malone, C. J.

Publications and source records attributed to Malone, C. J..

9 records

NASA NTRS1989

PC based graphic display real-time particle beam uniformity

A technique has been developed to support the study of the effects of cosmic rays on integrated circuits. The system is designed to determine the particle distribution across the surface of an integrated circuit accurately while the circuit is bombarded by a particle beam. The system uses photomultiplier tubes, an octal discriminator, a computer-controlled NIM quad counter, and an IBM PC. It provides real-time operator feedback for fast beam tuning and monitors momentary fluctuations in the particle beam. The hardware, software, and system performance are described.

Huebner, M. A.↗

NASA NTRS1986

Field Funneling and Range Straggling in Silicon Detectors

Magnitudes of field funneling and range straggling determined in silicon-surface-barrier (Schottky-barrier) charged-particle detectors (SSBD's) through meaurement of charges collected from alpha-particle tracks. Method used extended to straightforward measurement of charge collection from heavy-ion tracks in these and other semiconductor devices. Such measurements used to assess single-event upsets in integratedcircuit chips, with view toward making them resistant to radiation. Field funneling and range straggling measured with electronic system in which charge collected from individual ions measured and recorded by multichannel analyzer.

Zoutendyk, J. A.↗

NASA NTRS1986

Partial-Transmission Scintillation Detector for Ions

Only outer portion of ion beam sampled to prevent unnecessary energy losses. Measurement device allows only periphery of beam to pass through scintillation material. Total flux in uniform beam inferred from peripheral flux. Device provides readings without reducing energy of ions in middle of beam. Measurement device developed for ion beams used in studies of how fast heavy ions affect integrated-circuit chips.

Malone, C. J.↗

NASA NTRS1986

Testing Electronic Devices for Single-Event Upset

Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.

Nichols, D. K.↗

NASA NTRS1986

Single-Event-Upset Studies: A Compilation

Document summarizes 15 studies of single-event upsets covering 60 different types of semiconductor devices. Studies discussed in document include verification of basic reactions induced by heavy ions and protons and surveys of latchup and bit-flip susceptibility of several types of devices and device-fabrication technologies.

Nichols, D. K.↗

NASA NTRS1984

Field funneling and range straggling in partially depleted silicon surface-barrier detectors

The effects of field funneling and range straggling have been quantitatively observed in the measurement of charge collected from alpha-particle tracks in silicon surface-barrier charged-particle detectors. The method described may be used for the straight-forward measurement of charge collection from heavy ions in these and other semiconductor devices.

Zoutendyk, J. A.↗

NASA NTRS1984

Experimental determination of single-event upset (SEU) as a function of collected charge in bipolar integrated circuits

Single-Event Upset (SEU) in bipolar integrated circuits (ICs) is caused by charge collection from ion tracks in various regions of a bipolar transistor. This paper presents experimental data which have been obtained wherein the range-energy characteristics of heavy ions (Br) have been utilized to determine the cross section for soft-error generation as a function of charge collected from single-particle tracks which penetrate a bipolar static RAM. The results of this work provide a basis for the experimental verification of circuit-simulation SEU modeling in bipolar ICs.

Zoutendyk, J. A.↗

NASA NTRS1984

A summary of JPL single event upset test data from May 1982, through January 1984

A summary of single event upset data for 42 device types (including RAMs, 4-bit slices, microprocessors, 4-bit counters, and flip-flops) studied at 11 different accelerator tests (performed chiefly with the Berkeley 88-inch cyclotron and the Cal Tech Van de Graaff) is presented. All bipolar and NMOS RAMs were found to be SEU sensitive, some with very low LET thresholds. Some CMOS or CMOS/SOS RAMs were hard; and the CMOS microprocessors were hard, but the bipolar and NMOS microprocessors were soft. Several devices were found to exhibit a cross section that depends strongly on LET, even when the LET is well above the LET threshold. A ranking of hardness is presented for the logic devices tested.

Nichols, D. K.↗

NASA NTRS1983

Single event upset (SEU) of semiconductor devices - A summary of JPL test data

The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).

Nichols, D. K.↗