Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures
The methods of high-resolution X-ray diffraction have been used to study the multilayered structures in an In{sub x}Ga{sub 1-x}N/GaN system grown by the method of metal-organic chemical-vapor deposition. A correlation between the strain state (relaxation) of the system, the indium content within quantum wells, the ratio of the barrier/well thicknesses, and the number of quantum wells in the active superlattice is established. It is shown that partial relaxation is observed even in a structure with one quantum well. The results we obtained indicate that the relaxation processes are bound to appreciably affect the optical characteristics of devices.
36 MATERIALS SCIENCE↗