Engineering Papers⌕ Search

Engineering topics

Lu, W.

Publications and source records attributed to Lu, W..

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

CINDER08 and Scripting Environment for Accelerator Activation Problems - Paper 101

CINDER is a transmutation code, developed originally at the Bettis Atomic Power Laboratory, which predicts induced radioactivity due to either reactor or accelerator-driven radiation sources. The code and associated data libraries have been expanded and improved over the years at Los Alamos National Laboratory. CINDER08 is the latest update in the series and represents a complete rewrite of CINDER, improving it in many areas. Beginning with CINDER90, several Perl scripts were developed to treat multi-cell problems in combination with the radiation transport code MCNPX. These scripts simplified the preparation of CINDER input and made the code much more user-friendly. In concert with the development of CINDER08, these scripting tools have also been updated. The script developers are intensive users of CINDER and had significant input into the development of CINDER08. CINDER08, through use of these scripts, also works with output from MCNP5, which is useful for problems that do not require the extended particle capabilities of MCNPX and do not require particle energies outside of the tabular physics regime, and with MCNP6. A new version of CINDER, CINDER08, incorporates many improvements to the coding and the data libraries. Updated versions of scripting tools improve the code's usability and simplify the use of CINDER output as the basis of gamma source terms for subsequent calculations. (authors)

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2014

Shielding design for a chip irradiation test facility at SNS - Paper 119

As digital and analog circuits are more and more sophisticatedly integrated, they become increasingly susceptible to single event upsets (SEU), a cause of electronic equipment malfunction induced by cosmic rays with particular hazard potential for aviation equipment. Electronic chips sensitive to SEU have to be tested in a simulated comic ray environment to ensure their reliability. It is found that the spallation induced fast neutron spectrum is very close to the neutron spectrum of the cosmic ray. Hence, a conceptual design study of a chip irradiation test facility is funded by FAA to be carried out at SNS, the world's most powerful accelerator driven facility for neutron scattering studies on materials. Compared to existing/being construct chip irradiation test facilities at LANL and ISIS, SNS can provide wider neutron energy range and much higher fluxes. This study focuses on the aspect of shielding design for such a chip irradiation facility. A number of medium-weighted and heavy materials were examined for efficiency in reducing radiation dose rate. In general, the smaller the target monolith is while satisfying the personnel-protection-driven radiation dose rate limit at its outside, the closer to the target chips could be placed and thus less beam power it demands to satisfy a given irradiation flux requirement. Before proceed to the shielding design, the neutron source coming off the target has to be determined for selecting a best spot for chip irradiation test, in which the incoming fast neutron spectrum approximate most to the atmospheric radiation condition. It also provides a source term for the following shielding design of the irradiation enclosure. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2014

Studies on a Q/A selector for the SECRAL electron cyclotron resonance ion source

Electron cyclotron resonance ion sources are widely used in heavy ion accelerators in the world because they are capable of producing high current beams of highly charged ions. However, the design of the Q/A selector system for these devices is challenging, because it must have a sufficient ion resolution while controlling the beam emittance growth. Moreover, this system has to be matched for a wide range of ion beam species with different intensities. In this paper, research on the Q/A selector system at the SECRAL (Superconducting Electron Cyclotron Resonance ion source with Advanced design in Lanzhou) platform both in experiment and simulation is presented. Based on this study, a new Q/A selector system has been designed for SECRAL II. The features of the new design including beam simulations are also presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Determination of the density of the defect states in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} high-k film Deposited by using rf-magnetron sputtering technique

A memory structure Pt/Al{sub 2}O{sub 3}/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Al{sub 2}O{sub 3}/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} high-k film was estimated as 6.63 × 10{sup 12} cm{sup −2}, indicating a body defect density of larger than 2.21 × 10{sup 19} cm{sup −3}. It is observed that the post-annealing in N{sub 2} can reduces the defect density in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

A memory device p-Si/SiO{sub 2}/(TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1}(TAO-81)/Al{sub 2}O{sub 3}/Pt was fabricated, in which a composite of two high-k dielectrics with a thickness of 1 nm was employed as the charge-trapping layer to enhance the charge-trapping efficiency of the memory device. At an applied gate voltage of ±9 V, TAO-81 memory device shows a memory window of 8.83 V in its C-V curve. It also shows a fast response to a short voltage pulse of 10{sup −5} s. The charge-trapping capability, the endurance, and retention characteristics of TAO-81 memory device can be improved by introducing double TAO-81 charge-trapping layers intercalated by an Al{sub 2}O{sub 3} layer. The charge-trapping mechanism in the memory device is mainly ascribed to the generation of the electron-occupied defect level in the band gap of Al{sub 2}O{sub 3} induced by the inter-diffusion between TiO{sub 2} and Al{sub 2}O{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

The temperature- and bias-dependent photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations. It is found that the peak response wavelength will shift as the bias and temperature change. Aided by band structure calculations, we propose a model of the double excited states and explain the experimental observations very well. In addition, the working mechanisms of the quasi-bound state confined in the quantum well, including the processes of tunneling and thermionic emission, are also investigated in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. These obtained results provide a full understanding of the bound-to-quasi-bound state and the bound-to-quasi-continuum state transition, and thus allow for a better optimization of QWIPs performance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Progress of superconducting electron cyclotron resonance ion sources at Institute of Modern Physics (IMP)

Superconducting ECR ion sources can produce intense highly charged ion beams for the application in heavy ion accelerators. Superconducting Electron Resonance ion source with Advanced Design (SECRAL) is one of the few fully superconducting ECR ion sources that has been successfully built and put into routine operation for years. With enormous efforts and R and D work, promising results have been achieved with the ion source. Heated by the microwave power from a 7 kW/24 GHz gyrotron microwave generator, very intense highly charged gaseous ion beams have been produced, such as 455 eμA Xe{sup 27+}, 236 eμA Xe{sup 30+}, and 64 eμA Xe{sup 35+}. Since heavy metallic ion beams are being more and more attractive and important for many accelerator projects globally, intensive studies have been made to produce highly charged heavy metal ion beams, such as those from bismuth and uranium. Recently, 420 eμA Bi{sup 30+} and 202 eμA U{sup 33+} have been produced with SECRAL source. This paper will present the latest results with SECRAL, and the operation status will be discussed as well. An introduction of recently started SECRAL II project will also be given in the presentation.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Studies on low energy beam transport for high intensity high charged ions at IMP

Superconducting Electron Cyclotron Resonance ion source with Advanced design in Lanzhou (SECRAL) is an advanced fully superconducting ECR ion source at IMP designed to be operational at the microwave frequency of 18–24 GHz. The existing SECRAL beam transmission line is composed of a solenoid lens and a 110° analyzing magnet. Simulations of particle tracking with 3D space charge effect and realistic 3D magnetic fields through the line were performed using particle-in-cell code. The results of the beam dynamics show that such a low energy beam is very sensitive to the space charge effect and significantly suffers from the second-order aberration of the analyzing magnet resulting in large emittance. However, the second-order aberration could be reduced by adding compensating sextupole components in the beam line. On this basis, a new 110° analyzing magnet with relatively larger acceptance and smaller aberration is designed and will be used in the design of low energy beam transport line for a new superconducting ECR ion source SECRAL-II. The features of the analyzer and the corresponding beam trajectory calculation will be detailed and discussed in this paper.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

The correlation of epitaxial graphene properties and morphology of SiC (0001)

The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Atomic state and characterization of nitrogen at the SiC/SiO{sub 2} interface

We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO{sub 2} interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO{sub 2}). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2001

Design-based mission operation

This paper describes the four phases of the VML addressing a major challenge per phase, mission model framework, virtual phototyping, agent-based mission system integration, and virtual mission operation.

Virtual Mission VML↗
NASA NTRS2000

Mission Lifecycle Modeling and Simulation

Mission synthesis and simulation research at the Jet Propulsion Laboratory addresses mission model taxonomy, progressive lifecycle representation, model-based mission design, and simulation-in-the-loop design.

Modeling Simulation↗