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Liu, C.

Publications and source records attributed to Liu, C..

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Study of orbit correction for eRHIC FFAG design

The unique feature of the orbits in the eRHIC Fixed Field Alternating Gradient (FFAG) design is that multiple accelerating and decelerating bunches pass through the same magnets with different horizontal offsets. Therefore, it is critical for the eRHIC FFAG to correct multiple orbits in the same vacuum pipe for better spin transmission and alignment of colliding beams. In this report, the effects on orbits from multiple error sources will be studied. The orbit correction method will be described and results will be presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Optics correction for the multi-pass FFAG ERL machine eRHIC

Gradient errors in the multi-pass Fixed Field Alternating Gradient (FFAG) Energy Recovery Linac (ERL) machine, eRHIC, distort the beam orbit and therefore cause emittance increase. The localization and correction of gradient errors are essential for an effective orbit correction and emittance preservation. In this report, the methodology and simulation of optics correction for the multi-pass FFAG ERL machine eRHIC will be presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Optics measurement and correction during acceleration with beta-squeeze in RHIC

In the past, beam optics correction at RHIC has only taken place at injection and at final energy, with interpolation of corrections partially into the acceleration cycle. Recent measurements of the beam optics during acceleration and squeeze have evidenced significant beta-beats that, if corrected, could minimize undesirable emittance dilutions and maximize the spin polarization of polarized proton beams by avoiding the high-order multipole fields sampled by particles within the bunch. We recently demonstrated successful beam optics corrections during acceleration at RHIC. We verified conclusively the superior control of the beam realized via these corrections

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

ERL with non-scaling fixed field alternating gradient lattice for eRHIC

The proposed eRHIC electron-hadron collider uses a "non-scaling FFAG" (NS-FFAG) lattice to recirculate 16 turns of different energy through just two beam lines located in the RHIC tunnel. This paper presents lattices for these two FFAGs that are optimized for low magnet field and to minimize total synchrotron radiation across the energy range. The higher number of recirculations in the FFAG allows a shorter linac (1.322GeV) to be used, drastically reducing cost, while still achieving a 21.2 GeV maximum energy to collide with one of the existing RHIC hadron rings at up to 250GeV. eRHIC uses many cost-saving measures in addition to the FFAG: the linac operates in energy recovery mode, so the beams also decelerate via the same FFAG loops and energy is recovered from the interacted beam. All magnets will be constructed from NdFeB permanent magnet material, meaning chillers and large magnet power supplies are not needed. This paper also describes a small prototype ERL-FFAG accelerator that will test all of these technologies in combination to reduce technical risk for eRHIC.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

RHIC polarized proton-proton operation at 100 GeV in Run 15

The first part of RHIC Run 15 consisted of ten weeks of polarized proton on proton collisions at a beam energy of 100 GeV at two interaction points. In this paper we discuss several of the upgrades to the collider complex that allowed for improved performance. The largest effort consisted in commissioning of the electron lenses, one in each ring, which are designed to compensate one of the two beam-beam interactions experienced by the proton bunches. The e-lenses raise the per bunch intensity at which luminosity becomes beam-beam limited. A new lattice was designed to create the phase advances necessary for a beam-beam compensation with the e-lens, which also has an improved off-momentum dynamic aperture relative to previous runs. In order to take advantage of the new, higher intensity limit without suffering intensity driven emittance deterioration, other features were commissioned including a continuous transverse bunch-by-bunch damper in RHIC and a double harmonic RF cature scheme in the Booster. Other high intensity protections include improvements to the abort system and the installation of masks to intercept beam lost due to abort kicker pre-fires.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Self-induced gaseous plasma as high power microwave opening switch medium

Self-induced gaseous plasma is evaluated as active opening switch medium for pulsed high power microwave radiation. The self-induced plasma switch is investigated for N{sub 2} and Ar environments under pressure conditions ranging from 25 to 700 Torr. A multi-pass TE{sub 111} resonator is used to significantly reduce the delay time inherently associated with plasma generation. The plasma forms under the pulsed excitation of a 4 MW magnetron inside the central dielectric tube of the resonator, which isolates the inner atmospheric gas from the outer vacuum environment. The path from the power source to the load is designed such that the pulse passes through the plasma twice with a 35 ns delay between these two passes. In the first pass, initial plasma density is generated, while the second affects the transition to a highly reflective state with as much as 30 dB attenuation. Experimental data revealed that virtually zero delay time may be achieved for N{sub 2} at 25 Torr. A two-dimensional fluid model was developed to study the plasma formation times for comparison with experimental data. The delay time predicted from this model agrees well with the experimental values in the lower pressure regime (error < 25%), however, due to filamentary plasma formation at higher pressures, simulated delay times may be underestimated by as much as 50%.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Amplitude analysis of e + e - →Υ(nS)π + π - at $\sqrt{s}$ = 10.886 GeV

Here, we report results on studies of the e + e - annihilation into three-body Υ ( n S ) π + π - ( n = 1 , 2 , 3 ) final states including measurements of cross sections and the full amplitude analysis. The cross sections measured at s = 10.866 GeV and corrected for the initial state radiation are σ ( e + e - → Υ ( 1 S ) π + π - ) = ( 2.27 ± 0.12 ± 0.14 ) pb , σ ( e + e - → Υ ( 2 S ) π + π - ) = ( 4.07 ± 0.16 ± 0.45 ) pb , and σ ( e + e - → Υ ( 3 S ) π + π - ) = ( 1.46 ± 0.09 ± 0.16 ) pb . Amplitude analysis of the three-body Υ ( n S ) π + π - final states strongly favors I G ( J P ) = 1 + ( 1 + ) quantum-number assignments for the two bottomonium-like Z b ± states, recently observed in the Υ ( n S ) π ± and h b ( m P ) π ± ( m = 1 , 2 ) decay channels. The results are obtained with a 121.4 fb - 1 data sample collected with the Belle detector at the KEKB asymmetric-energy e + e - collider.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2015

Search for B + → e + ν e and B + → μ + ν μ decays using hadronic tagging

We present a search for the rare leptonic decays B + → e + ν e and B + → μ + ν μ , using the full Υ(4S) data sample of 772 × 10 6 BB¯ pairs collected with the Belle detector at the KEKB asymmetric-energy e + e – collider. One of the B mesons from the Υ(4S) → BB¯ decay is fully reconstructed in a hadronic mode, while the recoiling side is analyzed for the signal decay. Here, we find no evidence of a signal in any of the decay modes. Upper limits of the corresponding branching fractions are determined as B(B + → e + ν e ) < 3.5 × 10 –6 and B(B + → μ + ν μ ) < 2.7 × 10 –6 at 90% confidence level.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2015

Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam

Wurtzite GaN films grown by hydride vapor phase epitaxy were implanted with 280 keV C{sup +} ions to a dose of 6 × 10{sup 16 }cm{sup −2}. Vacancy-type defects in C{sup +}-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter to a high value of 1.08–1.09 after implantation indicates introduction of very large vacancy clusters. Post-implantation annealing at temperatures up to 800 °C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000 °C. The other measurements such as X-ray diffraction, Raman scattering and Photoluminescence all indicate severe damage and even disordered structure induced by C{sup +}-implantation. The disordered lattice shows a partial recovery after annealing above 800 °C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C{sup +}-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Quantifying the Level of Cross-State Renewable Energy Transactions (Presentation)

This presentation and associated spreadsheet examine the level of cross-state renewable energy transactions. Most state renewable portfolio standard (RPS) policies allow for out-of-state renewable energy or renewable energy certificates to count towards compliance. This analysis focuses on compliance for 2012 and provides stakeholders with an understanding of the extent to which RPSs are being met.

111(D)↗
DOE OSTI2015

JTAG-based remote configuration of FPGAs over optical fibers

In this study, a remote FPGA-configuration method based on JTAG extension over optical fibers is presented. The method takes advantage of commercial components and ready-to-use software such as iMPACT and does not require any hardware or software development. The method combines the advantages of the slow remote JTAG configuration and the fast local flash memory configuration. The method has been verified successfully and used in the Demonstrator of Liquid-Argon Trigger Digitization Board (LTDB) for the ATLAS liquid argon calorimeter Phase-I trigger upgrade. All components on the FPGA side are verified to meet the radiation tolerance requirements.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Preparations for p-Au run in 2015

The p-Au particle collision is a unique category of collision runs. This is resulted from the different charge mass ratio of the proton and fully stripped Au ion (1 vs.79/197). The p-Au run requires a special acceleration ramp, and movement of a number of beam components as required by the beam trajectories. The DX magnets will be moved for the first time in the history of RHIC. In this note, the planning and preparations for p-Au run will be presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO{sub 2}/p-GaAs metal-oxide-semiconductor capacitors

The effect of atomic layer deposition (ALD) growth temperature on the interfacial characteristics of p-GaAs MOS capacitors with ALD HfO{sub 2} high-k dielectric using tetrakis(ethylmethyl)amino halfnium precursor is investigated in this study. Using the combination of capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements, ALD growth temperature is found to play a large role in controlling the reaction between interfacial oxides and precursor and ultimately determining the interface properties. The reduction of surface oxides is observed to be insignificant for ALD at 200 °C, while markedly pronounced for growth at 300 °C. The corresponding C-V characteristics are also shown to be ALD temperature dependent and match well with the XPS results. Thus, proper ALD process is crucial in optimizing the interface quality.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗