Lin, J. Y. | Engineering Papers

DOE OSTI2024

Fundamental optical transitions in hexagonal boron nitride epilayers

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibits two groups of emission lines. The first group includes the direct observation of the free exciton and impurity bound exciton (BX) transitions and phonon replicas of the BX transition, whereas the second group is attributed to the direct observation of the band-to-band transition and its associated phonon replicas. The observations of zero-phonon lines of the band-to-band and exciton transitions, which are supposedly forbidden or “dark” in perfect h-BN crystals, result from a relaxed requirement of momentum conservation due to symmetry-breaking in the presence of high concentrations of impurities/defects and strain, which in turn provided more deterministic values of the energy bandgap (E g ), exciton binding energy (E x ), and binding energy of impurity bound excitons (E BX ) in h-BN epilayers. Excitonic parameters of h-BN epilayers grown by MOCVD, carbon-free chemical vapor deposition, and high purity h-BN bulk materials are compared and discussed. The present results, together with available information in the literature, represent a significant improvement in the understanding of the fundamental optical properties and excitonic parameters of h-BN ultrawide bandgap semiconductors.

36 MATERIALS SCIENCE↗

NASA NTRS1992

Linear-quadratic-Gaussian synthesis with reduced parameter sensitivity

We present a method for improving the tolerance of a conventional LQG controller to parameter errors in the plant model. The improvement is achieved by introducing additional terms reflecting the structure of the parameter errors into the LQR cost function, and also the process and measurement noise models. Adjusting the sizes of these additional terms permits a trade-off between robustness and nominal performance. Manipulation of some of the additional terms leads to high gain controllers while other terms lead to low gain controllers. Conditions are developed under which the high-gain approach asymptotically recovers the robustness of the corresponding full-state feedback design, and the low-gain approach makes the closed-loop poles asymptotically insensitive to parameter errors.

Lin, J. Y.↗

NASA NTRS1989

Design of LQG controllers with reduced parameter sensitivity

A method is presented for improving the tolerance of LQG controllers to parameter errors. The improvement is achieved by introducing terms reflecting the structure of the errors into the LQR cost function and the process and measurement noise models. Adjusting the sizes of these additional terms permits a tradeoff between robustness and nominal performance.

Lin, J. Y.↗