Engineering topics
Li, C.
Publications and source records attributed to Li, C..
A Decade of Global Volcanic SO2 Emissions Measured from Space
The global flux of sulfur dioxide (SO2) emitted by passive volcanic degassing is a key parameter that constrains the fluxes of other volcanic gases (including carbon dioxide, CO2) and toxic trace metals (e.g., mercury). It is also a required input for atmospheric chemistry and climate models, since it impacts the tropospheric burden of sulfate aerosol, a major climate-forcing species. Despite its significance, an inventory of passive volcanic degassing is very difficult to produce, due largely to the patchy spatial and temporal coverage of ground-based SO2 measurements. We report here the first volcanic SO2 emissions inventory derived from global, coincident satellite measurements, made by the Ozone Monitoring Instrument (OMI) on NASA's Aura satellite in 2005-2015. The OMI measurements permit estimation of SO2 emissions from over 90 volcanoes, including new constraints on fluxes from Indonesia, Papua New Guinea, the Aleutian Islands, the Kuril Islands and Kamchatka. On average over the past decade, the volcanic SO2 sources consistently detected from space have discharged a total of approximately 63 kt/day SO2 during passive degassing, or approximately 23 +/- 2 Tg/yr. We find that approximately 30% of the sources show significant decadal trends in SO2 emissions, with positive trends observed at multiple volcanoes in some regions including Vanuatu, southern Japan, Peru and Chile.
Global and Regional Trends of Aerosol Optical Depth over Land and Ocean Using SeaWiFS Measurements from 1997 to 2010
Both sensor calibration and satellite retrieval algorithm play an important role in the ability to determine accurately long-term trends from satellite data. Owing to the unprecedented accuracy and long-term stability of its radiometric calibration, the SeaWiFS measurements exhibit minimal uncertainty with respect to sensor calibration. In this study, we take advantage of this well-calibrated set of measurements by applying a newly-developed aerosol optical depth (AOD) retrieval algorithm over land and ocean to investigate the distribution of AOD, and to identify emerging patterns and trends in global and regional aerosol loading during its 13-year mission. Our results indicate that the averaged AOD trend over global ocean is weakly positive from 1998 to 2010 and comparable to that observed by MODIS but opposite in sign to that observed by AVHRR during overlapping years. On a smaller scale, different trends are found for different regions. For example, large upward trends are found over the Arabian Peninsula that indicate a strengthening of the seasonal cycle of dust emission and transport processes over the whole region as well as over downwind oceanic regions. In contrast, a negative-neutral tendency is observed over the desert/arid Saharan region as well as in the associated dust outflow over the north Atlantic. Additionally, we found decreasing trends over the eastern US and Europe, and increasing trends over countries such as China and India that are experiencing rapid economic development. In general, these results are consistent with those derived from ground-based AERONET measurements.
East Asian Studies of Tropospheric Aerosols and their Impact on Regional Climate (EAST -AIRC): An overview
As the most populated region of the world, Asia is a major source of aerosols with potential large impact over vast downstream areas, Papers published in this special section describe the variety of aerosols observed in China and their effects and interactions with the regional climate as part of the East Asian Study of Tropospheric Aerosols and their Impact on Regional Climate (EAST-AIRC), The majority of the papers are based on analyses of observations made under three field projects, namely, the Atmospheric Radiation Measurements (ARM) Mobile Facility mission in China (AMF-China), the East Asian Study of Tropospheric Aerosols: An International Regional Experiment (EAST-AIRE), and the Atmospheric Aerosols of China and their Climate Effects (AACCE), The former two are U,S,-China collaborative projects, and the latter is a part of the China's National Basic Research program (or often referred to as "973 project"), Routine meteorological data of China are also employed in some studies, The wealth of general and speCIalized measurements lead to extensive and close-up investigations of the optical, physical, and chemical properties of anthropogenic, natural, and mixed aerosols; their sources, formation, and transport mechanisms; horizontal, vertical, and temporal variations; direct and indirect effects; and interactions with the East Asian monsoon system, Particular efforts are made to advance our understanding of the mixing and interaction between dust and anthropogenic pollutants during transport. Several modeling studies were carried out to simulate aerosol impact on radiation budget, temperature, precipitation, wind and atmospheric circulation, fog, etc, In addition, impacts of the Asian monsoon system on aerosol loading are also simulated.
Transient Torque Method: A Fast and Nonintrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts
A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of liquid metals and molten semiconductors. The experimental setup of the transient torque method is similar to that of the oscillation cup method. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate around its vertical axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with published data. The method is nonintrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer to measure just the viscosity of the melt or as a rotating magnetic field method to determine the electrical conductivity of a melt or a solid if desired.
Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts
The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.
Density, Electrical Conductivity and Viscosity of Hg(sub 0.8)Cd(sub 0.2)Te Melt
The density, viscosity, and electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt were measures as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(sub 0.2)Te melt as the temperature was decreased to below 1090 K.
Density, Electrical Conductivity and Viscosity of Hg(0.8)Cd(0.2)Te Melt
The density, viscosity, and electrical conductivity of Hg(0.8)Cd(0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(0.8)Cd(0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(0.8)Cd(0.2)Te melt as the temperature was decreased to below 1090 K
Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt
Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.
Thermal Diffusivity for III-VI Semiconductor Melts at Different Temperatures
The change of the thermal properties of semiconductor melts reflects the structural changes inside the melts, and a fundamental understanding of this structural transformation is essential for high quality semiconductor crystal growth process. This paper focused on the technical development and the measurement of thermal properties of III-VI semiconductor melts at high temperatures. Our previous work has improved the laser flash method for the specialized quartz sample cell. In this paper, we reported the results of our recent progress in further improvements of the measurement system by minimizing the free convection of the melt, adding a front IR detector, and placing the sample cell in a vacuum environment. The results for tellurium and selenium based compounds, some of which have never been reported in the literature, were obtained at different temperatures as a function of time. The data were compared with other measured thermophysical properties to shed light on the structural transformations of the melt.
Thermophysical Properties of Selected II-VI Semiconducting Melts
Thermophysical properties are essential for the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the II-VI semiconductor melts are scarce. This paper reports the results of the temperature dependence of melt density, viscosity and electrical conductivity of selected II-VI compounds, including HgTe, HgCdTe and HgZnTe. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. The results were compared with and showed good agreement with the existing data in the literature.
Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)
In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.
Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity
The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.
Electrical Conductivity of HgTe at High Temperatures
The electrical conductivity of HgTe was measured using a rotating magnetic field method from 300 K to the melting point (943 K). A microscopic theory for electrical conduction was used to calculate the expected temperature dependence of the HgTe conductivity. A comparison between the measured and calculated conductivities was used to obtain the estimates of the temperature dependence of Gamma(sub 6)-Gamma(sub 8) energy gap from 300 K to 943 K. The estimated temperature coefficient for the energy gap was comparable to the previous results at lower temperatures (less than or equal to 300 K). A rapid increase in the conductivity just above 300 K and a subsequent decrease at 500 K is attributed to band crossover effects. This paper describes the experimental approach and some of the theoretical calculation details.
Transient Torque Method: A Fast and Non-Intrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts
A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of semiconducting or metallic melts. The experimental setup is similar to that for the oscillation cup technique. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate along its axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with the published data. The main advantage of the technique is that the measurement can be completed in one or two minutes, as opposed to the one or two-hour measurement time required by the oscillation cup technique. The method is non-intrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer if desired.
Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds
The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previously reported. A simple kinetic theory, which contains the formation reactions of Te polymerization that increases the molecular weight, was proposed to interpret the relaxation behavior of HgZnTe viscosity data.
Transient Torque Technique for Viscosity and Electrical Conductivity Determination of Semiconducting Liquids
A novel apparatus based on transient torque technique is constructed in MSFC/NASA. The apparatus uses a 125um diameter quartz fiber as torsion wire. A high sensitive angular detector is implemented to measure the deflection angle of the crucible containing the liquid. A rotating magnetic field (RMF) is used to induce a rotating flow of a conducting or semiconducting melts. By measuring the magnitude and transient behavior of the induced deflection angle, the electrical conductivity and viscosity of the melt can be measured simultaneously. High purity elements namely Hg, Ga, Zn and Te are tested at room temperature and high temperature up to 900 C.
Characterizing Thermal Properties of Melting Te Semiconductor: Thermal Diffusivity Measurements and Simulation
Tellurium is an element for many II-VI and I-III-VI(sub 2) compounds that are useful materials for fabricating many devices. In the melt growth techniques, the thermal properties of the molten phase are important parameter for controlling growth process to improve semiconducting crystal quality. In this study, thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range from 500 C to 900 C. A pulsed laser with 1064 nm wavelength is focused on one side of the measured sample. The thermal diffusivity can be estimated from the temperature transient at the other side of the sample. A numerical simulation based on the thermal transport process has been also performed. By numerically fitting the experimental results, both the thermal conductivity and heat capacity can be derived. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. The error analysis and the comparison of the results to published data measured by other techniques will be discussed.