Engineering topics

Lee, Yun Seog

Publications and source records attributed to Lee, Yun Seog.

18 records

DOE OSTI2024

Amine-Assisted Ligand-Exchange Method to Enhance Photovoltaic Parameters in FAPbI3 Nanocrystal Solar Cells

Perovskite colloidal nanocrystals (PeNCs) have exceptional optoelectronic properties and phase stability, making them promising for photovoltaic applications. However, insulating ligands on PeNC surfaces limit the current density and reduce the power conversion efficiency (PCE) in PeNC solar cells (SCs). This study introduces an amine-assisted ligand-exchange (ALE) strategy using 3-phenyl-1-propylamine (3P1P) to effectively remove long ligands from PeNC films. ALE reduced long-chain ligand density without increasing the number of defect states and therefore reduced the exciton-binding energy of FAPbI3 NC films. These changes facilitated exciton dissociation and charge transport in FAPbI3 PeNC SCs. The facilitation of exciton dissociation was due to the increased magnetic dipole interaction between excitons after the ALE process. The use of ALE achieved FAPbI3 PeNC SCs that had an improved short-circuit current density of 17.98 mA/cm2 and a PCE of 15.56% with improved stability after the treatment and negligible hysteresis. This work provides new insight into engineering PeNC films.

amines↗

DOE OSTI2019

Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

Gershon, Talia S.↗

DOE OSTI2018

Achieving band gap grading of CZTS and CZTSe materials

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Technique for achieving large-grain Ag.sub.2ZnSn(S,Se).sub.4thin films

Techniques for increasing grain size in AZTSSe absorber materials are provided. In one aspect, a method for forming an absorber film on a substrate includes: contacting the substrate with an Ag source, a Zn source, a Sn source, and an S source and/or an Se source under conditions sufficient to form the absorber film on the substrate having a target composition of: Ag.sub.XZn.sub.YSn(S,Se).sub.Z, wherein 1.7<x<2.2, 0.9<y<1.3, and 3.5<z<4.5, and including an amount of the Ag source that is from about 10% to about 30% greater than is needed to achieve the target composition; annealing the absorber film; and removing excess Ag from the absorber film. A solar cell and method for fabrication thereof are also provided.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

15 GEOTHERMAL ENERGY↗

DOE OSTI2017

Dry etch method for texturing silicon and device

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Determining interface properties limiting open-circuit voltage in heterojunction solar cells

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (V OC ) as a result of the interface is a critical step in evaluating a new material. In this work, we fabricate thin-film PV devices using cuprous oxide (Cu 2 O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensties ( JVTi ). We quantify the loss in V OC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

14 SOLAR ENERGY↗

DOE OSTI2017

Back Contact Engineering for Increased Performance in Kesterite Solar Cells

The thin-film photovoltaic absorber Cu 2 ZnSn(S,Se) 4 (CZTSSe) holds considerable promise for large scale conversion of sunlight into electricity. CZTSSe is composed of Earth-abundant elements that exhibit low-toxicities, but improvements in device efficiency have been hampered by difficulties in increasing open circuit voltages (V OC ) due, at least in part, to disorder induced band tailing. We present a method to increase VOC through direct modification of the back contact; our approach involves the separation of fully functioning devices from their Mo/glass substrate to reveal the back CZTSSe surface. Formation of a new back contact consisting of a thermally deposited high work function material (MoO 3 ), together with a higly reflective (Au) capping layer, creates an electrostatic field that drives electrons to the front p-n junction and leads to a decrease in electron-hole recombination. Model simulations indicating an increase in V OC with decreasing absorber thickness are borne out by experiments with devices of varying thicknesses (0.7–2.0 μm). We report VOC increases of up to 49 mV for a 1 μm thick absorber, with even greater increases up to 61 mV when the back CZTSSe surface is etched with bromine-methanol.

14 SOLAR ENERGY↗

DOE OSTI2017

Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

14 SOLAR ENERGY↗

DOE OSTI2017

Compositional effects in Ag 2 ZnSnSe 4 thin films and photovoltaic devices

Ag 2 ZnSnSe 4 (AZTSe) is a relatively new n-type photovoltaic (PV) absorber material which has recently demonstrated a conversion efficiency of ~5% in a Schottky device architecture. To date, little is known about how the influence of composition on AZTSe material properties and the resulting PV performance. In this study, the Ag/Sn ratio is shown to be critical in the controlling grain growth, non-radiative recombination, and the bulk defect structure of the absorber. Insufficient Ag (relative to Zn and Sn) results in small grains, low photoluminescence intensities, and band gap narrowing, possibly due to an increase in the bulk defect density. Additionally, etching the AZTSe films in KCN prior to junction formation is found to be important for achieving reproducible efficiencies. Surface analysis using Auger Nanoprobe Microscopy analysis reveals that a KCN etch can selectively remove potentially harmful Ag-rich secondary phases, therefore improving the MoO 3 /AZTSe junction quality. Moreover, grain boundaries in AZTSe are found to be enriched in Sn and O following KCN; the role this oxide plays in surface passivation and junction formation has yet to be determined.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance

A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

14 SOLAR ENERGY↗

DOE OSTI2016

Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag 2 ZnSnSe 4 Absorber

The kesterite material Cu 2 ZnSn(S,Se) 4 (CZTSSe) is an attractive earth–abundant semiconductor for photovoltaics. However, the power conversion efficiency is limited by a large density of I–II antisite defects, which cause severe band tailing and open–circuit voltage loss. Ag 2 ZnSnSe 4 (AZTSe) is a promising alternative to CZTSSe with a substantially lower I–II antisite defect density and smaller band tailing. AZTSe is weakly n–type, and this study reports for the first time on how the carrier density is impacted by stoichiometry. Here, this study presents the first–ever photovoltaic device based on AZTSe, which exhibits an efficiency of 5.2%, which is the highest value reported for an n–type thin–film absorber. Due to the weakly n–type nature of the absorber, a new architecture is employed (SnO:F/AZTSe/MoO 3 /ITO) to replace conventional contacts and buffer materials. Using this platform, it is shown that the band tailing parameter in AZTSe more closely resembles that of CIGSe than CZTSSe, underscoring the strong promise of this absorber. In demonstrating the ability to collect photogenerated carriers from AZTSe, this study paves the way for novel thin–film heterojunction architectures where light absorption in the n–type device layer can supplement absorption in the p–type layer as opposed to producing a net optical loss.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Ag 2 ZnSn(S,Se) 4 : A highly promising absorber for thin film photovoltaics

The growth in efficiency of earth-abundant kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag 2 ZnSnSe 4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se 2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. In conclusion, the results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2015

Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

In this report the properties of large grain cuprous oxide (Cu 2 O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω·cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.

14 SOLAR ENERGY↗

DOE OSTI2015

The impact of sodium on the sub-bandgap states in CZTSe and CZTS

We compare the optically active sub-bandgap states in polycrystalline Cu{sub 2}ZnSnSe{sub 4} (CZTSe) and Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films as a function of sodium content. In all samples studied, we find that CZTSe has a lower concentration of radiative defect-derived states compared to CZTS and that the states are also shallower in CZTSe compared to CZTS. Further, we find that sodium impacts the relative ratios of two sub-bandgap peaks in the 4 K photoluminescence (PL) spectra of CZTSe (one at ∼0.85 eV and another at ∼0.92 eV). We propose that both of these sub-bandgap peaks stem from intrinsic point defects in CZTSe rather than from electronic states introduced by sodium; this is supported by a measurement on a sodium-free single-crystal of CZTSe. We also show that films with stronger emission through the shallower sub-bandgap states at 4 K display room-temperature PL closer to the bandgap energy. For all sodium quantities studied, one broad PL peak is observed in the 4 K PL spectrum of CZTS which also shifts towards the band edge with increasing sodium. A reduced overall defect density and the fact that the states that are present are shallower together may help account for the lower V{sub OC} deficits in CZTSe and the empirical observations that sodium improves device performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

Abstract not provided

Siah, Sin Cheng↗

DOE OSTI2014

Intrinsic Defect Engineering of Cuprous Oxide to Enhance Electrical Transport Properties for Photovoltaic Applications

Intrinsic point-defect species in cuprous oxide films are manipulated based on their thermodynamic properties via the implementation of a controlled annealing process. A wide range of electrical properties is demonstrated, with a window suitable for high-quality solar cell devices. A variation of carrier concentration over two orders of magnitude is demonstrated. Minority carrier lifetime is investigated by means of microwave photoconductance decay measurements, demonstrating a strong correlation with carrier concentration. Spectrally resolved photoluminescence yields are analyzed to provide insight into lifetime limiting mechanisms as a function of Cu2O processing parameters. Hall measurements of carrier mobility and concentration are taken at room temperature to provide insight into the effect of these processing conditions on net ionized defect concentration.

14 SOLAR ENERGY↗