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Lee, Kevin

Publications and source records attributed to Lee, Kevin.

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Strontium isoscape of sub-Saharan Africa allows tracing origins of victims of the transatlantic slave trade

Abstract Strontium isotope ( 87 Sr/ 86 Sr) analysis with reference to strontium isotope landscapes (Sr isoscapes) allows reconstructing mobility and migration in archaeology, ecology, and forensics. However, despite the vast potential of research involving 87 Sr/ 86 Sr analysis particularly in Africa, Sr isoscapes remain unavailable for the largest parts of the continent. Here, we measure the 87 Sr/ 86 Sr ratios in 778 environmental samples from 24 African countries and combine this data with published data to model a bioavailable Sr isoscape for sub-Saharan Africa using random forest regression. We demonstrate the efficacy of this Sr isoscape, in combination with other lines of evidence, to trace the African roots of individuals from historic slavery contexts, particularly those with highly radiogenic 87 Sr/ 86 Sr ratios uncommon in the African Diaspora. Our study provides an extensive African 87 Sr/ 86 Sr dataset which includes scientifically marginalized regions of Africa, with significant implications for the archaeology of the transatlantic slave trade, wildlife ecology, conservation, and forensics.

Science & Technology - Other Topics↗
DOE OSTI2022

The Role of Innovation in the Electric Utility Sector

Innovation is essential for future power systems to be safe and secure, clean and sustainable, affordable and equitable, and reliable and resilient, according to a recent National Academies report. But state regulatory reforms are needed to encourage adoption of new technologies to support evolution of the nation’s power systems.1 Berkeley Lab's report, The Role of Innovation in the Electric Utility Sector, provides consumer, labor, utility, third-party provider, and clean technology consultant perspectives on this theme. To achieve state targets for clean energy and greenhouse gas emissions, some state regulatory utility commissions are exploring new approaches to spur innovation: -For utilities, regulatory and marketing flexibility, increased funding for demonstration projects, and performance-based ratemaking including multi-year rate plans -For third parties, ways to provide utility customers with innovative products and services directly Among the questions the report addresses: 1. How are consumer advocate views evolving with respect to innovative regulatory and ratemaking approaches? 2. How can utility decarbonization and grid modernization initiatives provide opportunities for local communities and workers to receive tangible benefits and facilitate community support for siting electricity infrastructure? 3. How are electric utilities partnering with technology companies to provide innovative energy management services and sustainable energy solutions for utility customers? 4. What regulatory innovations are public utility commissions exploring to enable third-party providers to participate in the transition to a modern electric system? 5. What regulatory changes are needed to enable innovative solutions from utilities and third parties at the necessary speed and scale to meet state decarbonization goals? The report is the 13th in the Future Electric Utility Regulation series, which taps leading thinkers to tackle complex regulatory issues for electricity. 1 National Academies of Sciences, Engineering, and Medicine. 2021. The Future of Electric Power in the United States. The National Academies Press.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates

Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on single-crystal AlN substrates. An AlGaN growth guideline map is developed, leading to pseudomorphic Al x Ga 1–x N epitaxial layers with x ~0.6–1.0 Al contents at a growth rate of ~0.3 μm/h. These epitaxial layers exhibit atomic steps, indicating step flow epitaxial growth, and room-temperature band edge emission from ~4.5 to 5.9 eV. Growth conditions are identified in which the background impurity concentrations of O, C, Si, and H in the MBE layers are found to be very near or below detection limits. An interesting Si segregation and gettering behavior is observed at the epitaxial AlGaN/AlN heterojunction with significant implications for the formation and transport of 2D electron or hole gases. Well-controlled intentional Si doping ranging from ~2 × 10 17 to 3 × 10 19 atoms/cm 3 is obtained, with sharp dopant density transition profiles. In Si-doped Al 0.6 Ga 0.4 N epilayers, a room-temperature free electron concentration of ~3 × 10 19 /cm 3 , an electron mobility of ~27 cm 2 /V s, and an n-type resistivity of ~7.5 m Ω cm are obtained. Here, the implications of these findings on electronic and photonic devices on single-crystal AlN substrates are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Do Programmers Prefer Predictable Expressions in Code?

Source code is a form of human communication, albeit one where the information shared between the programmers reading and writing the code is constrained by the requirement that the code executes correctly. Programming languages are more syntactically constrained than natural languages, but they are also very expressive, allowing a great many different ways to express even very simple computations. Still, code written by developers is highly predictable, and many programming tools have taken advantage of this phenomenon, relying on language model surprisal as a guiding mechanism. Additionally, while surprisal has been validated as a measure of cognitive load in natural language, its relation to human cognitive processes in code is still poorly understood. In this paper, we explore the relationship between surprisal and programmer preference at a small granularity—do programmers prefer more predictable expressions in code? Using meaning-preserving transformations, we produce equivalent alternatives to developer-written code expressions and run a corpus study on Java and Python projects. In general, language models rate the code expressions developers choose to write as more predictable than these transformed alternatives. Then, we perform two human subject studies asking participants to choose between two equivalent snippets of Java code with different surprisal scores (one original and transformed). We find that programmers do prefer more predictable variants, and that stronger language models like the transformer align more often and more consistently with these preferences.

97 MATHEMATICS AND COMPUTING↗