Radiation Response of a MEMS Accelerometer: An Electrostatic Force
Particle irradiation on the mechanical sensor of the ADXL50 microelectromechanical accelerometer shifts the output voltage.
Particle↗
Engineering topics
Lee, C. I.
Publications and source records attributed to Lee, C. I..
Comparison of Total Dose Responses on High Resolution Analog-to-Digital Converter Technologies
This paper compares total dose effects on two different technology (CMOS and BiCMOS) 12-bit ADCs from the same manufacturer, Burr-Brown.
Dose Responses Analog-to-Digital Converter↗
Total Ionizing Dose Effects on 64Mb 3.3V DRAMs
64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.
Ionizing Dose Effects Samsung Mitsubishi↗
Degradation of Precision Reference Devices in Space Environments
This paper presents radiation test results for several different precision voltage devices. Their degradation is compared to that expected for the basic bandgap reference circuit, which is used as a theoretical benchmark, and uses only npn transistorss.
Precision↗
Total Dose Effects and Hardness Assurance for Optocouplers
The operation and efficiency of optocouplers depend on a number of different factors, and the way that these factors are degraded by radiation must be properly understood in order to apply these devices in space systems.
optocouplers optocoupler efficiency LED degradatio↗
Hardness Assurance Techniques for New Generation COTS Devices
Hardness Assurance (HA) techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed significant degradation at HDR, not at low dose rate environment. New generation low-power op amps showed more degradation at low voltage applications. HA test techniques for COTS devices are presented in this paper.
New Millenium advanced technologies miniature spac↗
Enhanced Damage in Bipolar Devices at Low Dose Rates: Effects at Very Low Dose Rates*
The effect of very low dose rates and equivalence of high-temperature irradiation are investigated for several device types that are sensitive to enhanced low dose-rate damage. New results are included at 0.001 rad(si)/s.
bipolar↗
Total Dose Effects on Microelectromechanical Systems (MEMS): Accelerometers
Microelectromechanical sensors, ADXL50 and XMMAS40G accelerometers, which are fabricated with surface micromachining techniques are characterized for total dose radiation. An unusual failure mechanism that appears to be associated with the sensor was observed and presented in this paper.
mems↗
Hardness Assurance and Testing Techniques for High Resolution
Many different analog-to-digital converters (ADCs) have been.
analog-to-digital converters ADC hardness testing ↗
Hardness Assurance and Testing Techniques for High Resolution (12- to 16-bit) Analog-to-Digital Converters
Discussed are hardness assurance and testing techniques to test and evaluate total dose radiation degradation of high resolution A/D converters. Because high-speed, high-resolution converters are critical parts in a digital signal processing or data acquisition system, the evaluation of performance in the early design phase is very important. Converters from three manufacturers are evaluated.
Analog-to-Digital↗
Total Ionizing Dose Effects on High Resolution (12-/14-bit) Analog-to-Digital Converters
This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly importamt for high accuracy converters. Rebound effects in the thick-oxide MOS devices causes these responses to be different at low and high dose rates, which is a major concern for space applications.
radiation ionizing analog-to-digital converters MO↗
Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters
Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.
Lee, C. I.↗