Engineering topics

Larsson, Anders G.

Publications and source records attributed to Larsson, Anders G..

6 records

NASA NTRS1994

In(X)Ga(1-X) As Strain-Layer Multiple-Quantum-Well Laser Diodes

Fabricated on InP substrates, devices operate at room temperature, emitting at wavelengths near 1.8 micrometers. By suitable modification of structure of devices, possible to achieve operation at any wavelength from 1.6 to 2.5 micrometers: this range important in lidar and in remote sensing of atmospheric gases. Quantum-well and barrier layers sandwiched between two 60-nm-thick layers of lattice-matched InGaAs. InGaAs layers sandwiched between two 150-nm-thick layers of InGaAsP. Those layers sandwiched, in turn, between InP substrate and InP cladding layer. Also layer of InGaAs atop InP cladding layers.

Forouhar, Siamak↗

NASA NTRS1994

Optically Addressable Spatial Light Modulators

Integrated multiple-quantum-well/Fabry-Perot structure provides high-contrast variation of reflection of reading beam, under control of writing beam. Periodic potential barriers separate photogenerated electrons from holes, leading to long recombination lifetimes and large concentrations of free charge carriers. Concentrations quench excitons or fill energy bands in quantum wells, altering absorption of reading beam.

Maserjian, Joseph↗

NASA NTRS1993

Strained layer InP/InGaAs quantum well laser

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Forouhar, Siamak↗

NASA NTRS1992

Optical Link For Readout From Focal-Plane Array

Outputs of photodetectors modulate beam of light. Proposed optical link carries analog readout signals from photodetectors in focal-plane array to external signal-processing circuitry. Insensitive to electromagnetic interference at suboptical frequencies, and imposes smaller heat load on cryogenic apparatus because it does not include high-power electronic amplifier or laser transmitter within cold chamber.

Fossum, Eric R.↗

NASA NTRS1992

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

Larsson, Anders G.↗

NASA NTRS1991

Lateral modes of broad area semiconductor lasers - Theory and experiment

Calculations of the lateral modes of an ideal broad area laser, including the nonlinear interaction between the carriers and the optical field, are made. The results include periodically modulated near fields and single- and double-lobed far fields similar to those previously measured. The unsaturable losses are higher and quantum efficiencies are lower than those determined from plane-wave approximations. Broad area InGaAs-GaAlAs-GaAs quantum-well lasers were fabricated and measured and found to closely agree with the theory in near, far, and spectrally resolved near fields. An occultation experiment on the far field confirms previously predicted unstable resonatorlike modes with V-shaped fronts.

Lang, Robert J.↗