Engineering topics

Lal, Amit

Publications and source records attributed to Lal, Amit.

5 records

DOE OSTI2024

Ferroelectric AlBN films by molecular beam epitaxy

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Physics↗

DOE OSTI2024

MEMS RF accelerators for nuclear energy and advanced manufacturing

Energetic ions are widely used to develop radiation hard structural materials and fuels for advanced nuclear energy. Ion beams are also used to generate neutrons for nuclear materials testing, as well as in a series of high impact, high value adding manufacturing processes (ranging from doping of semiconductors to hardening of materials against wear and to increase bio-compatibility of materials). But to date, high power beams of high energy ions are simply too expensive because they are delivered from large single beam accelerators. We have recently demonstrated that MEMS technology enables massively parallel, low cost batch fabrication of ion beams. We propose to scale intense ion accelerators based on MEMS (micro-electro mechanical systems) to high beam power (>10 kW). With our approach, hundreds to thousands of ion beamlets will be densely packed on silicon wafers. Ions are injected and accelerated across gaps formed in stacks of wafers, leading to uniquely high current densities for intense ion accelerators with variable kinetic energy (0.1 to 10 MeV) and variable ion species. Our team brings together experts in high power ion accelerators from Lawrence Berkeley National Laboratory and leading experts in MEMS technology from Cornell University. We will deliver a disruptive technology of low cost, flexible and massively scalable ion accelerators that will enable the rapid development of radiation hard nuclear materials for advanced nuclear energy and enable new applications in manufacturing.

43 PARTICLE ACCELERATORS↗

DOE OSTI2022

Epitaxial Sc x Al 1- x N on GaN exhibits attractive high-K dielectric properties

Epitaxial Sc x Al 1- x N thin films of ~100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ~17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1- x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1- x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Wafer-based charged particle accelerator, wafer components, methods, and applications

A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.

Lal, Amit↗

NASA NTRS2012

Method to Enhance the Operation of an Optical Inspection Instrument Using Spatial Light Modulators

For many aspheric and freeform optical components, existing interferometric solutions require a custom computer-generated hologram (CGH) to characterize the part. The overall objective of this research is to develop hardware and a procedure to produce a combined, dynamic, Hartmann/ Digital Holographic interferometry inspection system for a wide range of advanced optical components, including aspheric and freeform optics. This new instrument would have greater versatility and dynamic range than currently available measurement systems. The method uses a spatial light modulator to pre-condition wavefronts for imaging, interferometry, and data processing to improve the resolution and versatility of an optical inspection instrument. Existing interferometers and Hartmann inspection systems have either too small a dynamic range or insufficient resolution to characterize conveniently unusual optical surfaces like aspherical and freeform optics. For interferometers, a specially produced, computer-generated holographic optical element is needed to transform the wavefront to within the range of the interferometer. A new hybrid wavefront sensor employs newly available spatial light modulators (SLMs) as programmable holographic optical elements (HOEs). The HOE is programmed to enable the same instrument to inspect an optical element in stages, first by a Hartmann measurement, which has a very large dynamic range but less resolution. The first measurement provides the information required to precondition a reference wave that avails the measurement process to the more precise phase shifting interferometry. The SLM preconditions a wavefront before it is used to inspect an optical component. This adds important features to an optical inspection system, enabling not just wavefront conditioning for null testing and dynamic range extension, but also the creation of hybrid measurement procedures. This, for example, allows the combination of dynamic digital holography and Hartmann sensing procedures to cover a virtually unlimited dynamic range with high resolution. Digital holography technology brings all of the power and benefits of digital holographic interferometry to the requirement, while Hartmann-type wavefront sensors bring deflectometry technologies to the solution. The SLM can be used to generate arbitrary wavefronts in one leg of the interferometer, thereby greatly simplifying its use and extending its range. The SLM can also be used to modify the system into a dynamic Shack-Hartmann system, which is useful for optical components with large amounts of slope. By integrating these capabilities into a single instrument, the system will have tremendous flexibility to measure a variety of optical shapes accurately.

Trolinger, James↗