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Lagowski, J.

Publications and source records attributed to Lagowski, J..

62 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Surface photovoltage in exciton absorption range in CdS

The high resolution, intrinsic spectra of surface photovoltage are reported for semiconducting n-type CdS single crystals. At reduced temperatures (120-160 K) the spectra exhibit three sharp maxima due to A, B and C free exciton transitions. Energy positions of these lines and valence band parameters (spin-orbit and crystal field splittings) estimated from surface photovoltage are in good agreement with values obtained by other methods. The excitonic transitions are very sensitive to surface treatment, i.e. polishing, etching, background illumination and surface doping. The mechanism of direct interaction of free excitons with surface states is proposed to explain exciton lines in surface photovoltage.

Morawski, A.↗
NASA NTRS1974

Photomechanical vibration of thin crystals of polar semiconductors

It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photosensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses.

Lagowski, J.↗
NASA NTRS1972

Surface piezoelectric effect in non-centrosymmetric semiconductors - CdS.

It was found that mechanical bending of CdS wafers with the (00.1) orientation causes pronounced changes in the contact potential difference. The changes were of the order of one volt. This effect was attributed to the polarization induced in the depletion layer by the mechanical stress. On this basis a model was developed which accounts for the experimental results.

Lagowski, J.↗
NASA NTRS1972

Electronic characteristics of 'real' CdS surfaces.

Photovoltage spectroscopy (including photovoltage inversion and photovoltage quenching) was used to determine the electronic characteristics of real (basal and prismatic) surfaces of CdS. In room atmosphere, surface states with the following positions were found in the cadmium surfaces: Ec - Et equal to 0.05, 0.4, and 0.8 eV, and Ev - Et equal to 0.83 eV. The same surface states were present in the sulfur surfaces, with the exception of those at Ec - Et equal to 0.4 eV. In the prismatic and unetched basal surfaces, states at Ec - Et equal to 1.1 eV were found in addition to all of those found on the cadmium surfaces.

Lagowski, J.↗
NASA NTRS1971

Photovoltage inversion effect and its application to semiconductor surface studies: CdS.

Experimental results on the surface states of the basal plane of CdS are presented and discussed in the light of a model of the photovoltage inversion effect. It is found that the surface states associated with this effect are in poor communication with the bulk and under normal conditions may require long periods of time to reach equilibrium. A combination of photovoltage inversion, photovoltage quenching, and photovoltage spectroscopy is believed to constitute a very effective tool for the study of surfaces of wide energy gap semiconductors.

Lagowski, J.↗