A Comparative Study of Heavy Ion and Proton Induced Bit Error Sensitivity and Complex Burst Error Modes in Commercially Available High Speed SiGe BiCMOS
A viewgraph presentation that reviews recent SiGe bit error test data for different commercially available high speed SiGe BiCMOS chips that were subjected to various levels of heavy ion and proton radiation. Results for the tested chips at different operating speeds are displayed in line graphs.
Marshall, Paul↗