Engineering topics
Publications and source records attributed to LaBel, K. A..
The performance of Michigan State University's Single-Event Effects Test Facility (SEETF) during its inaugural runs is evaluated. Beam profiles and other diagnostics are presented, and prospects for future development and testing are discussed.
We present new data in the ongoing effort to bound the effect of proton angle of incidence on the single-event upset (SEU) rate in silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) devices.
This viewgraph presentation describes radiation tests of nanocrystal (NC) memory for space systems. A nanocrystal test chip was bombarded by heavy ions from a cyclotron.
This viewgraph presentation provides information on radiation tests on encoders intended for a constellation of microsatellites. The encoders use CMOS Ultra-Low Power Radiation Tolerant (CULPRiT) technology. The presentation addresses power consumption, radiation dosage, and Single Event Upset (SEU).
Pulse Width Modulator (PWM) Controllers are the heart of switching power supply systems in development today. The PWMs considered here have the same integration advantages as many other controllers but it also includes the interface drivers for the follow-on power Field Effect Transistors (FET). Previous work on these types of devices looked into the required test methodologies [ 11 and the impact of radiation on the soft start and shutdown circuits of typically incorporated in the technology [2]. Taking advantage of this previous work this study was undertaken to determine the single event destructive and transient susceptibility of the Linfinity SG1525A Pulse Width Modulator Controller. The device was monitored for transient interruptions in the output signals and for destructive events induced by exposing it to a heavy ion beam at the Texas A&M University Cyclotron Single Event Effects Test Facility. After exposing these devices to the beam, a new upset mode has been identified that can lead to catastrophic power supply system failure if this event would occur while drive power FETs off the two device outputs. The devices and the test methods used will be described first. This will be followed by a brief description of the data collected to date (not all data can be presented with the length constraints of the summary) and a summary of the key results.
Radiation test results and analyses are presented for ultra-low power Reed Solomon encoder circuits that are being considered for use on the Space Technology 5 (ST5) mission. The total ionizing dose tolerance is in excess of 100 krad(Si) and is due to the low supply voltage and the use of back-bias, which suppresses radiation-induced leakage currents in the n-channel devices. The circuits do not latch-up for ion LET values of at least 90 MeV-sq cm/mg. A hardened-by-design approach to SEU has achieved an upset threshold of about 20 MeV-sq cm/mg. The SEU rate expected for these circuits in the geosynchronous transfer orbit of ST5 is low.