Engineering topics
Kwon, Ohhun
Publications and source records attributed to Kwon, Ohhun.
Flexible atomic layer deposition system for coating porous materials
In this paper, we describe an atomic layer deposition (ALD) system that is optimized for the growth of thin films on high-surface-area, porous materials. The system incorporates a moveable dual-zone furnace allowing for rapid transfer of a powder substrate between heating zones whose temperatures are optimized for precursor adsorption and oxidative removal of the precursor ligands. The reactor can both be evacuated, eliminating the need for a carrier gas during precursor exposure, and rotated, to enhance contact between a powder support and the gas phase, both of which help us to minimize mass transfer limitations in the pores during film growth. The capabilities of the ALD system were demonstrated by growing La 2 O 3 , Fe 2 O 3 , and LaFeO 3 films on a 120 m 2 g -1 MgAl 2 O 4 powder. Analysis of these films using scanning transmission electron microscopy and temperature-programmed desorption of 2-propanol confirmed the conformal nature of the oxide films.
Synthesis of high-surface area tungstated zirconia by atomic layer deposition on mesoporous silica
Atomic layer deposition (ALD) was used to prepare ZrO 2 films on the surface of the mesoporous silica, SBA-15, and to modify the surface of these films with WO 3 in order to form tungstated zirconia. Adsorption-desorption isotherms, pore size distributions, and transmission electron microscopy demonstrated that the ALD synthesis produced zirconia films that were conformal to the SBA-15 pores. DRIFT spectroscopy of pyridine adsorbed on the tungstated-zirconia SBA-15 samples showed adsorbed pyridinium ions, confirming the presence of Brønsted-acid sites on this material, consistent with what has been reported for bulk tungstated zirconia. Here, the ALD-synthesized, tungstated-zirconia SBA-15 was also shown to be active in the acid-catalyzed H-D exchange between toluene and D 2 O.
Evidence for redispersion of Ni on LaMnO 3 films following high-temperature oxidation
LaMnO 3 films, 0.5-nm thick, were deposited by atomic layer deposition (ALD) onto γ-Al 2 O 3 that had been modified with 15-wt% CaO. The CaO was shown to be effective in preventing formation of LaAlO 3 that formed when La 2 O 3 was deposited directly onto γ-Al 2 O 3 . Lattice fringes on the resulting CaAl 2 O 4 /γ-Al 2 O 3 substrate were weakly resolved, allowing a detailed characterization of the LaMnO 3 films. High-resolution transmission electron microscopy (HR-TEM) images showed that the LaMnO 3 formed two-dimensional crystallites, ~10 to 15 nm wide, that covered most of the surface. Crystallites with (001) and (111) orientation were clearly identified. High-temperature oxidation caused Ni to spread over the LaMnO 3 film, suggesting there is a reaction of the Ni 2+ cations with the perovskite lattice. Ni formed by high-temperature reduction on these films remained well dispersed and significantly more active for CO 2 reforming of CH 4 compared to Ni on MgAl 2 O 4 , even after repeated oxidation and reduction cycles at 1073 K. Finally, the implications of these results for understanding metal-support interactions between Ni and LaMnO 3 are discussed.
Dry reforming of methane over Ni supported on LaMnO 3 thin films
Thin films of LaMnO 3 were deposited onto MgAl 2 O 4 by Atomic Layer Deposition (ALD) and studied as supports for Ni in the Dry Reforming of Methane (DRM). Scanning Transmission Electron Microscopy (STEM) with Energy-Dispersive X-ray Spectroscopy (EDS) demonstrated that LaMnO 3 covered the support uniformly, and X-ray diffraction (XRD) showed that the LaMnO 3 films maintained their perovskite structure after 5 redox cycles at 1073 K. The Ni also remained well dispersed after 5 redox cycles at 1073 K. The LaMnO 3 -supported catalyst was more active than Ni on the unmodified MgAl 2 O 4 and showed superior resistance against coke formation. Lastly, the results for Ni on the LaMnO 3 films are compared to previous results for Ni on LaFeO 3 , CaTiO 3 , SrTiO 3 , and BaTiO 3 films.
The effects of SMSI on m-Cresol Hydrodeoxygenation over Pt/Nb 2 O 5 and Pt/TiO 2
The hydrodeoxygenation (HDO) of m-cresol was studied on Pt/Nb 2 O 5 /MgAl 2 O 4 and Pt/TiO 2 /MgAl 2 O 4 catalysts to understand the effects of Strong Metal Support Interactions (SMSI). The Nb 2 O 5 and TiO 2 supports were prepared as 0.7-nm films on MgAl 2 O 4 by Atomic Layer Deposition (ALD) to ensure that the structures of the catalyst were the same. When reduced at 773 K to place Pt in the encapsulated state, Pt/Nb 2 O 5 /MgAl 2 O 4 was much less active than Pt/MgAl 2 O 4 at 573 K but much more active at 623 K. While Pt/MgAl 2 O 4 deactivated rapidly due to coking, Pt/Nb 2 O 5 /MgAl 2 O 4 showed significantly better coke tolerance and was almost 100% selective towards toluene production. Pt/Nb 2 O 5 /MgAl 2 O 4 reduced at lower temperatures exhibited intermediate catalytic properties. The effect of reduction temperature on Pt/TiO 2 /MgAl 2 O 4 was much less and this catalyst was more similar to Pt/MgAl 2 O 4 than its Nb 2 O 5 counterpart. Lastly, the implications of these results for understanding the nature of oxide promoters on HDO of m-cresol are discussed.