Surface Dynamics in p-InAs and n-GaAs Probed with Scanning Ultrafast Electron Microscopy (SUEM).
Abstract not provided.
Perez, Christopher↗
Engineering topics
Kumar, Suhas
Publications and source records attributed to Kumar, Suhas.
Thermal Infrared Detectors: expanding performance limits using ultrafast electron microscopy
This project aimed to identify the performance-limiting mechanisms in mid- to far infrared (IR) sensors by probing photogenerated free carrier dynamics in model detector materials using scanning ultrafast electron microscopy (SUEM). SUEM is a recently developed method based on using ultrafast electron pulses in combination with optical excitations in a pump- probe configuration to examine charge dynamics with high spatial and temporal resolution and without the need for microfabrication. Five material systems were examined using SUEM in this project: polycrystalline lead zirconium titanate (a pyroelectric), polycrystalline vanadium dioxide (a bolometric material), GaAs (near IR), InAs (mid IR), and Si/SiO 2 system as a prototypical system for interface charge dynamics. The report provides detailed results for the Si/SiO 2 and the lead zirconium titanate systems.
36 MATERIALS SCIENCE↗
Energy Efficient Computing R&D Roadmap Outline for Automated Vehicles
Automated vehicles (AV) hold great promise for improving safety, as well as reducing congestion and emissions. In order to make automated vehicles commercially viable, a reliable and highperformance vehicle-based computing platform that meets ever-increasing computational demands will be key. Given the state of existing digital computing technology, designers will face significant challenges in meeting the needs of highly automated vehicles without exceeding thermal constraints or consuming a large portion of the energy available on vehicles, thus reducing range between charges or refills. The accompanying increases in energy for AV use will place increased demand on energy production and distribution infrastructure, which also motivates increasing computational energy efficiency.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Universal phase dynamics in VO 2 switches revealed by ultrafast operando diffraction
Understanding the pathways and time scales underlying electrically driven insulator-metal transitions is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide (VO 2 ) switches. We discover an electrically triggered, isostructural state that forms transiently on microsecond time scales, which is shown by phase-field simulations to be stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase is similar to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway. Our results establish electrical excitation as a route for uncovering nonequilibrium and metastable phases in correlated materials, opening avenues for engineering dynamical behavior in nanoelectronics.
36 MATERIALS SCIENCE↗
Separation of current density and electric field domains caused by nonlinear electronic instabilities
In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.
42 ENGINEERING↗
Physical origins of current and temperature controlled negative differential resistances in NbO 2
Negative differential resistance behavior in oxide memristors, especially those using NbO 2 , is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here in this paper, we examine NbO 2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Oxygen migration during resistance switching and failure of hafnium oxide memristors
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Furthermore, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfO x memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.
36 MATERIALS SCIENCE↗
Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors
Here we analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (< 3 μW) and energy (< 200 fJ per bit per μm 2 ), low read-power (~nW), and high endurance ( > millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). Lastly, these results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.
36 MATERIALS SCIENCE↗
The phase transition in VO 2 probed using x-ray, visible and infrared radiations
Vanadium dioxide (VO 2 ) is a model system that has been used to understand closely occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO 2 , the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here, we use transmission of spatially averaged infrared (λ = 1.5 μm) and visible (λ = 500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays (λ = 2.25–2.38 nm) to probe the same VO 2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occurs at significantly lower temperatures than the Mott transition, and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.
36 MATERIALS SCIENCE↗
Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. Furthermore, the resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.
36 MATERIALS SCIENCE↗
Characterization of electronic structure of periodically strained graphene
We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. Furthermore, we measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry, and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively. During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ∼100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗