Engineering topics

Krasowski, Michael J.

Publications and source records attributed to Krasowski, Michael J..

At least 37 records · Page 2

NASA NTRS2014

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

On-orbit measurements of new photovoltaic (PV) technologies for space power are an essential step in the development and qualification of advanced solar cells. NASA Glenn Research Center will fly and measure several solar cells attached to NASA Goddards Robotic Refueling Mission (RRM), expected to be launched in 2014. Industry and government partners have provided advanced PV devices for evaluation of performance and environmental durability. The experiment is completely self-contained, providing its own power and internal data storage. Several new cell technologies including Inverted Metamorphic Multi-junction and four-junction cells will be tested.

robotic refueling mission↗

NASA NTRS2014

Circuit for Communication over DC Power Line Using High Temperature Electronics

A high temperature communications circuit includes a power conductor for concurrently conducting electrical energy for powering circuit components and transmitting a modulated data signal, and a demodulator for demodulating the data signal and generating a serial bit stream based on the data signal. The demodulator includes an absolute value amplifier for conditionally inverting or conditionally passing a signal applied to the absolute value amplifier. The absolute value amplifier utilizes no diodes to control the conditional inversion or passing of the signal applied to the absolute value amplifier.

Krasowski, Michael J.↗

NASA NTRS2014

Fuzzy Neuron: Method and Hardware Realization

This innovation represents a method by which single-to-multi-input, single-to-many-output system transfer functions can be estimated from input/output data sets. This innovation can be run in the background while a system is operating under other means (e.g., through human operator effort), or may be utilized offline using data sets created from observations of the estimated system. It utilizes a set of fuzzy membership functions spanning the input space for each input variable. Linear combiners associated with combinations of input membership functions are used to create the output(s) of the estimator. Coefficients are adjusted online through the use of learning algorithms.

Krasowski, Michael J.↗

NASA NTRS2013

Cratos: The Evolution of a Robotic Vehicle

Cratos was originally designed to evaluate a small footprint, low-power, tracked vehicle for traversing a crater face and for scraping regolith from a crater basin on the lunar surface. These activities require a power-to-weight ratio such that the vehicle is able to pull its entire mass vertically off the ground with the power from one track. Further complicating matters, the available power-units that fit the vehicles approximate one cubic meter volume, restrict power consumption to 100 watts. Lastly, the vehicle is required to telemeter data from an array of sensors to a remote control station for further study. This unique mix of design constraints lead to the creation of a versatile mobile sensor platform, described in this paper, capable of performing a myriad of functions beyond the scope of its original purpose.

Greer, Lawrence C.↗

NASA NTRS2012

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

Some embodiments of the present invention describe an apparatus that includes an oscillator, a ramp generator, and an inverter. The apparatus includes an oscillator, an inverter, and a ramp generator. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time of the waveform, a measurement of a current and a voltage of the solar cell is performed as the current and voltage of the solar cell are transmitted through a first channel and to a second channel. During the high time of the waveform, a measurement of a current of a shorted cell and a voltage reference is performed as the current of the shorted cell and the voltage reference are transmitted through the first channel and the second channel.

Krasowski, Michael J.↗

NASA NTRS2011

Teleoperated Marsupial Mobile Sensor Platform Pair for Telepresence Insertion Into Challenging Structures

A platform has been developed for two or more vehicles with one or more residing within the other (a marsupial pair). This configuration consists of a large, versatile robot that is carrying a smaller, more specialized autonomous operating robot(s) and/or mobile repeaters for extended transmission. The larger vehicle, which is equipped with a ramp and/or a robotic arm, is used to operate over a more challenging topography than the smaller one(s) that may have a more limited inspection area to traverse. The intended use of this concept is to facilitate the insertion of a small video camera and sensor platform into a difficult entry area. In a terrestrial application, this may be a bus or a subway car with narrow aisles or steep stairs. The first field-tested configuration is a tracked vehicle bearing a rigid ramp of fixed length and width. A smaller six-wheeled vehicle approximately 10 in. (25 cm) wide by 12 in. (30 cm) long resides at the end of the ramp within the larger vehicle. The ramp extends from the larger vehicle and is tipped up into the air. Using video feedback from a camera atop the larger robot, the operator at a remote location can steer the larger vehicle to the bus door. Once positioned at the door, the operator can switch video feedback to a camera at the end of the ramp to facilitate the mating of the end of the ramp to the top landing at the upper terminus of the steps. The ramp can be lowered by remote control until its end is in contact with the top landing. At the same time, the end of the ramp bearing the smaller vehicle is raised to minimize the angle of the slope the smaller vehicle has to climb, and further gives the operator a better view of the entry to the bus from the smaller vehicle. Control is passed over to the smaller vehicle and, using video feedback from the camera, it is driven up the ramp, turned oblique into the bus, and then sent down the aisle for surveillance. The demonstrated vehicle was used to scale the steps leading to the interior of a bus whose landing is 44 in. (.1.1 m) from the road surface. This vehicle can position the end of its ramp to a surface over 50 in. (.1.3 m) above ground level and can drive over rail heights exceeding 6 in. (.15 cm). Thus configured, this vehicle can conceivably deliver the smaller robot to the end platform of New York City subway cars from between the rails. This innovation is scalable to other formulations for size, mobility, and surveillance functions. Conceivably the larger vehicle can be configured to traverse unstable rubble and debris to transport a smaller search and rescue vehicle as close as possible to the scene of a disaster such as a collapsed building. The smaller vehicle, tethered or otherwise, and capable of penetrating and traversing within the confined spaces in the collapsed structure, can transport imaging and other sensors to look for victims or other targets.

Krasowski, Michael J.↗

NASA NTRS2011

Circuit for Communication Over Power Lines

Many distributed systems share common sensors and instruments along with a common power line supplying current to the system. A communication technique and circuit has been developed that allows for the simple inclusion of an instrument, sensor, or actuator node within any system containing a common power bus. Wherever power is available, a node can be added, which can then draw power for itself, its associated sensors, and actuators from the power bus all while communicating with other nodes on the power bus. The technique modulates a DC power bus through capacitive coupling using on-off keying (OOK), and receives and demodulates the signal from the DC power bus through the same capacitive coupling. The circuit acts as serial modem for the physical power line communication. The circuit and technique can be made of commercially available components or included in an application specific integrated circuit (ASIC) design, which allows for the circuit to be included in current designs with additional circuitry or embedded into new designs. This device and technique moves computational, sensing, and actuation abilities closer to the source, and allows for the networking of multiple similar nodes to each other and to a central processor. This technique also allows for reconfigurable systems by adding or removing nodes at any time. It can do so using nothing more than the in situ power wiring of the system.

Krasowski, Michael J.↗

NASA NTRS2011

Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters

A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.

Krasowski, Michael J.↗

NASA NTRS2010

Method and Circuit for In-Situ Health Monitoring of Solar Cells in Space

This innovation represents a method and circuit realization of a system designed to make in-situ measurements of test solar-cell operational parameters on orbit using readily available high-temperature and high-ionizing-radiation- tolerant electronic components. This innovation enables on-orbit in-situ solar-array health monitoring and is in response to a need recognized by the U.S. Air Force for future solar arrays for unmanned spacecraft. This system can also be constructed out of commercial-grade electronics and can be embedded into terrestrial solar power system as a diagnostics instrument. This innovation represents a novel approach to I-V curve measurement that is radiation and temperature hard, consumes very few system resources, is economical, and utilizes commercially available components. The circuit will also operate at temperatures as low as 55 C and up to +225 C, allowing it to reside close to the array in direct sunlight. It uses a swept mode transistor functioning as a resistive load while utilizing the solar cells themselves as the biasing device, so the size of the instrument is small and there is no danger of over-driving the cells. Further, this innovation utilizes nearly universal spacecraft bus resources and therefore can be readily adapted to any spacecraft bus allowing for ease of retrofit, or designed into new systems without requiring the addition of infrastructure. One unique characteristic of this innovation is that it effects the measurement of I-V curves without the use of large resistor arrays or active current sources normally used to characterize cells. A single transistor is used as a variable resistive load across the cell. This multi-measurement instrument was constructed using operational amplifiers, analog switches, voltage regulators, MOSFETs, resistors, and capacitors. The operational amplifiers, analog switches, and voltage regulators are silicon-on-insulator (SOI) technology known for its hardness to the effects of ionizing radiation. The SOI components used can tolerate temperatures up to 225 C, which gives plenty of thermal headroom allowing this circuit to perhaps reside in the solar cell panel itself where temperatures can reach over 100 C.

Krasowski, Michael J.↗

NASA NTRS2010

Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station

This paper reports long-term electrical results from two 6H-SiC junction field effect transistors (JFETs) presently being tested in Low Earth Orbit (LEO) space environment on the outside of the International Space Station (ISS). The JFETs have demonstrated excellent functionality and stability through 4600 hours of LEO space deployment. Observed changes in measured device characteristics tracked changes in measured temperature, consistent with wellknown JFET temperature-dependent device physics.

Neudeck, Philip G.↗

NASA NTRS2010

N channel JFET based digital logic gate structure

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

Krasowski, Michael J.↗

NASA NTRS2010

Smart Power Supply for Battery-Powered Systems

A power supply for battery-powered systems has been designed with an embedded controller that is capable of monitoring and maintaining batteries, charging hardware, while maintaining output power. The power supply is primarily designed for rovers and other remote science and engineering vehicles, but it can be used in any battery alone, or battery and charging source applications. The supply can function autonomously, or can be connected to a host processor through a serial communications link. It can be programmed a priori or on the fly to return current and voltage readings to a host. It has two output power busses: a constant 24-V direct current nominal bus, and a programmable bus for output from approximately 24 up to approximately 50 V. The programmable bus voltage level, and its output power limit, can be changed on the fly as well. The power supply also offers options to reduce the programmable bus to 24 V when the set power limit is reached, limiting output power in the case of a system fault detected in the system. The smart power supply is based on an embedded 8051-type single-chip microcontroller. This choice was made in that a credible progression to flight (radiation hard, high reliability) can be assumed as many 8051 processors or gate arrays capable of accepting 8051-type core presently exist and will continue to do so for some time. To solve the problem of centralized control, this innovation moves an embedded microcontroller to the power supply and assigns it the task of overseeing the operation and charging of the power supply assets. This embedded processor is connected to the application central processor via a serial data link such that the central processor can request updates of various parameters within the supply, such as battery current, bus voltage, remaining power in battery estimations, etc. This supply has a direct connection to the battery bus for common (quiescent) power application. Because components from multiple vendors may have differing power needs, this supply also has a secondary power bus, which can be programmed a priori or on-the-fly to boost the primary battery voltage level from 24 to 50 V to accommodate various loads as they are brought on line. Through voltage and current monitoring, the device can also shield the charging source from overloads, keep it within safe operating modes, and can meter available power to the application and maintain safe operations.

Krasowski, Michael J.↗

NASA NTRS2009

Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 C to +500 C

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 C to +500 C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

Neudeck, Philip G.↗

NASA NTRS2008

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Krasowski, Michael J.↗

NASA NTRS2008

Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry

This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 degC with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 C before failure.

Neudeck, Philip G.↗

NASA NTRS2008

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

Neudeck, Philip G.↗

NASA NTRS2008

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications.

Neudeck, Philip G.↗

NASA NTRS2008

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

Neudeck, Philip G.↗